Abstract: Provided is a semiconductor photoelectrode comprising a first conductive layer; a first n-type semiconductor layer disposed on the first conductive layer; and a second conductive layer covering the first n-type semiconductor layer. The first n-type semiconductor layer has a first n-type surface region and a second n-type surface region. The first n-type surface region is in contact with the first conductive layer. The second n-type surface region is in contact with the second conductive layer. The first n-type semiconductor layer is formed of at least one selected from the group consisting of a nitride semiconductor and an oxynitride semiconductor. The second conductive layer is light-transmissive. The second conductive layer is formed of a p-type oxide conductor.

Abstract: The hydrogen production device of the present invention includes: a first electrode including a conductive substrate and a photocatalytic semiconductor layer; a second electrode that is electrically connected to the first electrode and disposed in a second region opposite to a first region relative to the first electrode; the first region is defined as a region on a side of a surface of the first electrode in which the photocatalytic semiconductor layer is provided; a water-containing electrolyte solution; and a housing containing these. The first electrode is provided with first through-holes and the second electrode is provided with second through-holes; and the first through-holes and second through-holes form a communicating hole for allowing the first region and the second region to communicate with each other. An ion exchange membrane having substantially the same shape as the communicating hole is disposed in the communicating hole to close the communicating hole.

Abstract: Provided is a semiconductor photoelectrode comprising a conductive substrate; a first semiconductor photocatalyst layer provided on a surface of the conductive substrate; a second semiconductor photocatalyst layer provided on a surface of the first semiconductor photocatalyst layer. The semiconductor photoelectrode has a plurality of pillar protrusions on the surface thereof. A surface of each of the pillar protrusions is formed of the second semiconductor photocatalyst layer.

Abstract: In a hydrogen producing device, an electrolyte flow path between a plurality of hydrogen producing cells is disposed in a hydrogen production side and in an oxygen production side, separately. Further, an electrolyte flow path is formed through which the electrolyte flows downward from the top between the plurality of hydrogen producing cells, and on the other hand the electrolyte flows upward from the bottom within each hydrogen producing cell. Moreover, a contact point with a produced gas or an atmosphere is provided in a pathway of the electrolyte flow path.

Abstract: The present invention provides a method for adsorbing carbon dioxide onto porous metal-organic framework materials, a method for cooling porous metal-organic framework materials, a method for obtaining aldehyde using porous metal-organic framework materials and a method for warming porous metal-organic framework materials. In each method, porous metal-organic framework materials are used while an electric field or an electromagnetic field is applied to the porous metal-organic framework materials, or while a magnetic field or an electromagnetic field is applied to the porous metal-organic framework materials. If an electric field is applied, at least one organic compound included in the porous metal-organic framework materials is a polar compound. Instead, if a magnetic field is applied, at least one metal included in the porous metal-organic framework materials has an unpaired electron.

Abstract: Provided is a measuring method for a biological substance, a measuring chip, and a measuring device which exhibit improved electrical responsiveness and reliability. For example, the device or chip provided for measuring the amount of a biological substance in a liquid being measured comprises immobilized antibodies, a substance that is labeled with an ion-conductive compound and that is bonded to the antibodies, and an electrode containing a working electrode and a counter electrode, and the working electrode has a thin film on the surface thereof that contains a hydrocarbon group.

Abstract: The optical semiconductor of the present invention is an optical semiconductor containing In, Ga, Zn, O and N, and has a composition in which a part of oxygen (O) is substituted by nitrogen (N) in a general formula: In2xGa2(1-x)O3(ZnO)y, where x and y satisfy 0.2<x<1 and 0.5?y. In the general formula, x is preferably 0.5, and furthermore, y is preferably 1 or more and 6 or less, and more preferably 2 or 6. It is preferred that the optical semiconductor of the present invention have a wurtzite crystal structure. The optical semiconductor of the present invention is an excellent optical semiconductor because it has a smaller band gap, can utilize visible light, and has high carrier mobility and thus has high quantum efficiency.

Abstract: A photoelectrochemical cell (100) includes: a semiconductor electrode (120) including a conductor (121), a first n-type semiconductor layer (122) having a nanotube array structure, and a second n-type semiconductor layer (123); a counter electrode (130) connected to the conductor (121); an electrolyte (140) in contact with the second n-type semiconductor layer (123) and the counter electrode (130); and a container (110) accommodating the semiconductor electrode (120), the counter electrode (130) and the electrolyte (140).

Abstract: A semiconductor material of the present invention is a semiconductor material including an oxynitride containing at least one element selected from the Group 4 elements and Group 5 elements. In the oxynitride, part of at least one selected from oxygen and nitrogen is substituted with carbon. Nb is preferable as the Group 5 element.

Abstract: A photoelectrochemical cell (100) includes: a semiconductor electrode (120) including a substrate (121), a first n-type semiconductor layer (122) disposed on the substrate (121), and a second n-type semiconductor layer (123) and a conductor (124) disposed apart from each other on the first n-type semiconductor layer (122); a counter electrode (130) connected electrically to the conductor (124); an electrolyte (140) in contact with surfaces of the second n-type semiconductor layer (123) and the counter electrode (130); and a container (110) accommodating the semiconductor electrode (120), the counter electrode (130) and the electrolyte (140).

Abstract: A hydrogen producing cell of the present invention is provided with an electrolyte supply hole, an electrolyte discharge hole, a first hydrogen circulation hole and a second hydrogen circulation hole respectively penetrating a housing. In disposing the hydrogen producing cell, the electrolyte supply hole is arranged on a vertically upper side than the electrolyte discharge hole, the first hydrogen circulation hole is arranged on a vertically upper side than the electrolyte supply hole, and the second hydrogen circulation hole is arranged on a vertically upper side than the electrolyte discharge hole. By this configuration, it is possible to considerably reduce the length of a pipe and the number of manifolds concerning the electrolyte and hydrogen, and to link the hydrogen producing cells with one another simply and rationally.

Abstract: The method for producing the optical semiconductor of the present disclosure includes a mixing step of producing a mixture containing a reduction inhibitor and a niobium compound that contains at least oxygen in its composition; a nitriding step of nitriding the mixture by the reaction between the mixture and a nitrogen compound gas; and a washing step of isolating niobium oxynitride from the material obtained through the nitriding step by dissolving chemical species other than niobium oxynitride with a washing liquid. The optical semiconductor of the present disclosure substantially consists of niobium oxynitride having a crystal structure of baddeleyite and having a composition represented by the composition formula, NbON.

Abstract: The present invention is a niobium nitride which has a composition represented by the composition formula Nb3N5 and in which a constituent element Nb has a valence of substantially +5. The method for producing the niobium nitride of the present invention includes the step of nitriding an organic niobium compound by reacting the organic niobium compound with a nitrogen compound gas.

Abstract: A photoelectrode (100) of the present invention includes a conductive layer (12) and a photocatalytic layer (13) provided on the conductive layer (12). The conductive layer (12) is made of a metal nitride. The photocatalytic layer (13) is made of at least one selected from the group consisting of a nitride semiconductor and an oxynitride semiconductor. When the photocatalytic layer (13) is made of a n-type semiconductor, the energy difference between the vacuum level and the Fermi level of the conductive layer (12) is smaller than the energy difference between the vacuum level and the Fermi level of the photocatalytic layer (13). When the photocatalytic layer (13) is made of a p-type semiconductor, the energy difference between the vacuum level and the Fermi level of the conductive layer (12) is larger than the energy difference between the vacuum level and the Fermi level of the photocatalytic layer (13).

Abstract: An energy system includes an solar hydrogen producing unit (101) that produces hydrogen through decomposition of water by a photocatalytic effect, a fuel cell (103) that generates electricity by a reaction between the hydrogen produced by the solar hydrogen producing unit (101) and an oxidizing gas and discharges water as a reaction product, and a water distribution mechanism (104) that returns the water serving as the reaction product discharged from the fuel cell (103) to the solar hydrogen producing unit (101). With the configuration, an energy system that suppresses an amount of external water supply to a low level to achieve good water balance can be provided.

Abstract: The NbON film of the present invention is a NbON film in which a photocurrent is generated by light irradiation. The NbON film of the present invention is desirably a single-phase film. The hydrogen generation device (600) of the present invention includes: an optical semiconductor electrode (620) including a conductor (621) and the NbON film (622) of the present invention disposed on the conductor (621); a counter electrode (630) connected electrically to the conductor (621); a water-containing electrolyte (640) disposed in contact with a surface of the NbON film (622) and a surface of the counter electrode (630); and a container (610) containing the optical semiconductor electrode (620), the counter electrode (630), and the electrolyte (640). In this device, hydrogen is generated by irradiating the NbON film (622) with light.

Abstract: The hydrogen production device of the present invention includes: a first electrode (120) including a conductive substrate (101) and a photocatalytic semiconductor layer (102); a second electrode (103) that is electrically connected to the first electrode (120) and disposed in a second region (123) opposite to a first region (122) relative to the first electrode (120), when the first region (122) is defined as a region on a side of a surface of the first electrode (120) in which the photocatalytic semiconductor layer (102) is provided; a water-containing electrolyte solution (106); and a housing (105) containing these. The first electrode (120) is provided with a through-hole (131) at a position and the second electrode (103) is provided with a through-hole (132) at a position corresponding to the position, and the through-holes form a communicating hole (130) for allowing the first region (122) and the second region (123) to communicate with each other.

Abstract: The optical semiconductor of the present invention is an optical semiconductor containing In, Ga, Zn, O and N, and has a composition in which a part of oxygen (O) is substituted by nitrogen (N) in a general formula: In2xGa2(1-x)O3(ZnO)y, where x and y satisfy 0.2<x<1 and 0.5?y. In the general formula, x is preferably 0.5, and furthermore, y is preferably 1 or more and 6 or less, and more preferably 2 or 6. It is preferred that the optical semiconductor of the present invention have a wurtzite crystal structure. The optical semiconductor of the present invention is an excellent optical semiconductor because it has a smaller band gap, can utilize visible light, and has high carrier mobility and thus has high quantum efficiency.

Abstract: A photoelectrochemical cell (100) includes: a semiconductor electrode (120) including a conductor (121), a first n-type semiconductor layer (122) having a nanotube array structure, and a second n-type semiconductor layer (123); a counter electrode (130) connected to the conductor (121); an electrolyte (140) in contact with the second n-type semiconductor layer (123) and the counter electrode (130); and a container (110) accommodating the semiconductor electrode (120), the counter electrode (130) and the electrolyte (140).

Abstract: The method for producing the optical semiconductor of the present disclosure includes a mixing step of producing a mixture containing a reduction inhibitor and a niobium compound that contains at least oxygen in its composition; a nitriding step of nitriding the mixture by the reaction between the mixture and a nitrogen compound gas; and a washing step of isolating niobium oxynitride from the material obtained through the nitriding step by dissolving chemical species other than niobium oxynitride with a washing liquid. The optical semiconductor of the present disclosure substantially consists of niobium oxynitride having a crystal structure of baddeleyite and having a composition represented by the composition formula, NbON.