Patents by Inventor Kazuhito Kamei

Kazuhito Kamei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050183657
    Abstract: A bulk silicon carbide single crystal of good crystalline quality which includes a minimized number of structural defects and is free from micropipe defects can be produced by crystal growth in a melt of an alloy comprising Si, C, and M (wherein M is either Mn or Ti) and having an atomic ratio between Si and M in which the value of x, when express as Si1-xMx, is 0.1?×?0.7 in the case where M is Mn or 0.1?×?0.25 in the case where M is Ti at a temperature of the melt which is below 2000° C. The C component is preferably supplied into the melt by dissolution of a graphite crucible which contains the melt such that the melt is free from undissolved C. One method of crystal growth is performed by cooling the melt after a seed substrate is immersed in the melt.
    Type: Application
    Filed: October 15, 2004
    Publication date: August 25, 2005
    Applicant: Sumitomo Metal Industries, Ltd.
    Inventors: Kazuhiko Kusunoki, Shinji Munetoh, Kazuhito Kamei
  • Patent number: 6764767
    Abstract: A graphite powder suitable for a negative electrode material of a lithium ion secondary battery which assures a high discharging capacity not lower than 320 mAh/g is to be manufactured at a lower cost. Specifically, a graphite powder containing 0.01 to 5.0 wt % of boron and having a looped closure structure at an end of a graphite c-planar layer on the surface of a powder, with the density of the interstitial planar sections between neighboring closure structures being not less than 100/&mgr;m and not more than 1500/&mgr;m, and with d002 being preferably not larger than 3.3650 Å, is manufactured by (1) heat-treating a carbon material pulverized at an elevated speed before or after carbonization for graphization at temperature exceeding 1500° C. or by (2) heat-treating the carbon material pulverized before or after carbonization at a temperature exceeding 1500° C.
    Type: Grant
    Filed: April 16, 1999
    Date of Patent: July 20, 2004
    Assignee: Sony Corporation
    Inventors: Koji Moriguchi, Mitsuhara Yonemura, Kazuhito Kamei, Masaru Abe, Hideya Kaminaka, Noriyuki Negi, Atsuo Omaru, Masayuki Nagamine
  • Patent number: 6576369
    Abstract: A graphite powder has surface closed-end structures in which the graphite c-plane layers of the graphite layer crystal lattices have closed-ends on the surface of the graphite powder by linking the ends of one or more pairs of the c-plane layers, leaving interstices which are open on the surface of the graphite. The number of open interstices is at least 100 and at most 1500 per micrometer in a c-axis direction of the graphite. Preferably, the graphite powder has a specific surface area of 1.0 m2/g or less. Such a graphite powder can be prepared either by graphitizing a carbon material, which has been pulverized at a high speed under well-controlled conditions before and/or after the carbonization, or by subjecting a carbon material, which has been pulverized under well-controlled conditions before and/or after the carbonization, to graphitization and then to oxidative heat treatment at a temperature of 600-800° C. and finally to heat treatment at a temperature of 800° C. or higher in an inert gas.
    Type: Grant
    Filed: August 24, 1998
    Date of Patent: June 10, 2003
    Assignees: Sumitomo Metal Industries, Ltd., Sony Corporation
    Inventors: Koji Moriguchi, Mitsuharu Yonemura, Kazuhito Kamei, Noriyuki Negi, Masaru Abe, Hideya Kaminaka
  • Publication number: 20010051300
    Abstract: A graphite powder suitable for a negative electrode material of a lithium ion secondary battery which assures a high discharging capacity not lower than 320 mAh/g is to be manufactured at a lower cost. Specifically, a graphite powder containing 0.01 to 5.0 wt % of boron and having a looped closure structure at an end of a graphite c-planar layer on the surface of a powder, with the density of the interstitial planar sections between neighboring closure structures being not less than 100/&mgr;m and not more than 1500/&mgr;m, and with d002 being preferably not larger than 3.3650 Å, is manufactured by (1) heat-treating a carbon material pulverized at an elevated speed before or after carbonization for graphization at temperature exceeding 1500° C. or by (2) heat-treating the carbon material pulverized before or after carbonization at a temperature exceeding 1500° C.
    Type: Application
    Filed: April 16, 1999
    Publication date: December 13, 2001
    Inventors: KOJI MORIGUCHI, MITSUHARA YONEMURA, KAZUHITO KAMEI, MASARU ABE, HIDEYA KAMINAKA, NORIYUKI NEGI, ATSUO OMARU, MASAYUKI NAGAMINE