Abstract: A projection device the present disclosure includes a photographing unit that photographs a sheet on which guided information is entered at a plurality of times of day, the plurality of times of day including a first time of day and a second time of day being later than the first time of day; an image processing unit that extracts a partial characteristic amount of the sheet at the first time of day and a partial characteristic amount of the sheet at the second time of day to compute, at the second time of day, an amount of movement of the sheet from the first time of day; and a projection unit that projects guiding information for the guided information entered on the sheet, at a coordinate position to which the amount of movement of the sheet, computed by the image processing unit, has been added.

Abstract: A light emitting element includes a first electrode, an organic layer formed on the first electrode and including a luminescent layer composed of an organic luminescent material and a second electrode formed on the organic layer, and further includes a light reflecting layer provided below the first electrode. Light emitted in the luminescent layer is resonated between the light reflecting layer and an interface of the second electrode and the organic layer, and a portion of the light is output from the second electrode.

Abstract: To provide a display device and an electronic apparatus that suppress leakage of a drive current between adjacent light emitting elements. A display device includes: a plurality of light emitting elements having an organic light emitting layer sandwiched between a first electrode disposed for each of the light emitting elements and a second electrode in a lamination direction and arrayed on a plane; and an insulating layer disposed between the first electrodes. At least a part of a film thickness region in the insulating layer contains a positively charged inorganic nitride.

Abstract: Alight-emitting element of the present disclosure includes a light-emitting section including a plurality of light-emitting regions, and one or a plurality of microlens members controlling a traveling direction of light emitted from each of the light-emitting regions. Alternatively, the light-emitting element of the present disclosure includes a light-emitting section including one light-emitting region, and a plurality of microlens members controlling a traveling direction of light emitted from the one light-emitting region. Alternatively, the light-emitting element of the present disclosure includes a light-emitting section including a plurality of light-emitting regions, and one or a plurality of microlens members controlling a traveling direction of each light emitted from the plurality of light-emitting regions.

Abstract: A light emitting element 10 includes a first electrode 31, an organic layer 33 formed on the first electrode 31 and including a luminescent layer 33A composed of an organic luminescent material and a second electrode 32 formed on the organic layer 33, and further includes a light reflecting layer 50 provided below the first electrode 31. Light emitted in the luminescent layer 33A is resonated between the light reflecting layer 50 and an interface of the second electrode 32 and the organic layer 33, and a portion of the light is output from the second electrode 32.

Abstract: There is provided a display device capable of decreasing a drive voltage. A display device includes: a first electrode provided for each of a plurality of light emitting elements arranged on a flat surface; at least two or more kinds of inorganic insulating layers which separate each of the light emitting elements and have different concentrations of hydroxy groups on surfaces of the layers; an organic light emitting layer provided on the first electrode and the two or more kinds of inorganic insulating layers; and a second electrode provided on the organic light emitting layer.

Abstract: An image display device 11 includes an image forming device 20, and a light-reflecting member 30, a plurality of light-reflecting elements 40 is provided on a facing surface 31 of the light-reflecting member 30 facing an observer in a first direction and a second direction different from the first direction, and light constituting a minute region of an image emitted from the image forming device 20 enters the light-reflecting element 40 and is emitted from the light-reflecting element 40 toward a pupil 12 of the observer.

Abstract: To provide a display device and an electronic apparatus that suppress leakage of a drive current between adjacent light emitting elements. A display device includes: a plurality of light emitting elements having an organic light emitting layer sandwiched between a first electrode disposed for each of the light emitting elements and a second electrode in a lamination direction and arrayed on a plane; and an insulating layer disposed between the first electrodes. At least a part of a film thickness region in the insulating layer contains a positively charged inorganic nitride.

Abstract: There is provided a display device and an electronic apparatus that suppress leakage of a drive current between adjacent light emitting elements. A display device includes a plurality of light emitting elements having an organic light emitting layer sandwiched between a first electrode disposed for each of the light emitting elements and a second electrode in a lamination direction and arrayed on a plane, and an insulating layer disposed between the first electrodes. At least a part of a film thickness region in the insulating layer contains a positively charged inorganic nitride.

Abstract: A solid-state imaging device includes a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4×n pixels (where, n is a positive integer), respectively, in horizontal and vertical directions.

Abstract: There is provided a display device capable of decreasing a drive voltage. A display device includes: a first electrode provided for each of a plurality of light emitting elements arranged on a flat surface; at least two or more kinds of inorganic insulating layers which separate each of the light emitting elements and have different concentrations of hydroxy groups on surfaces of the layers; an organic light emitting layer provided on the first electrode and the two or more kinds of inorganic insulating layers; and a second electrode provided on the organic light emitting layer.

Abstract: To provide a display device and an electronic apparatus that suppress leakage of a drive current between adjacent light emitting elements. A display device includes: a plurality of light emitting elements having an organic light emitting layer sandwiched between a first electrode disposed for each of the light emitting elements and a second electrode in a lamination direction and arrayed on a plane; and an insulating layer disposed between the first electrodes. At least a part of a film thickness region in the insulating layer contains a positively charged inorganic nitride.

Abstract: A solid-state imaging device includes, in a semiconductor substrate, a pixel portion provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain an electric signal and a peripheral circuit portion disposed on the periphery of the pixel portion, wherein a gate insulating film of aMOS transistor in the peripheral circuit portion is composed of a silicon oxynitride film, a gate insulating film of aMOS transistor in the pixel portion is composed of a silicon oxynitride film, and an oxide film is disposed just above the photoelectric conversion portion in the pixel portion.

Abstract: A solid-state imaging device includes a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4×n pixels (where, n is a positive integer), respectively, in horizontal and vertical directions.

Abstract: A solid-state imaging device includes a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4×n pixels (where, n is a positive integer), respectively, in horizontal and vertical directions.

Abstract: A solid-state imaging device includes a photoelectric conversion unit, a transistor, and an element separation region separating the photoelectric conversion unit and the transistor. The photoelectric conversion unit and the transistor constitute a pixel. The element separation region is formed of a semiconductor region of a conductivity type opposite to that of a source region and a drain region of the transistor. A part of a gate electrode of the transistor protrudes toward the element separation region side beyond an active region of the transistor. An insulating film having a thickness substantially the same as that of a gate insulating film of the gate electrode of the transistor is formed on the element separation region continuing from a part thereof under the gate electrode of the transistor to a part thereof continuing from the part under the gate electrode of the transistor.

Abstract: A solid-state imaging device includes, in a semiconductor substrate, a pixel portion provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain an electric signal and a peripheral circuit portion disposed on the periphery of the pixel portion, wherein a gate insulating film of aMOS transistor in the peripheral circuit portion is composed of a silicon oxynitride film, a gate insulating film of aMOS transistor in the pixel portion is composed of a silicon oxynitride film, and an oxide film is disposed just above the photoelectric conversion portion in the pixel portion.

Abstract: To obtain an imaging unit, a lens barrel, and a portable terminal which can effectively suppress spring-back of solid-state imaging elements, while facilitating height lowering thereof. An imaging unit includes: a solid-state imaging element; and an imaging lens for forming a subject image on a photoelectric conversion part of the solid-state imaging element. An imaging surface of the solid-state imaging element is curved in a manner that a peripheral side is inclined toward an object side relative to a screen center. The imaging lens constrains the solid-state imaging element to prevent a radius of curvature of the imaging surface from varying. Thus, field curvature, distortion aberration, and comatic aberration are appropriately corrected.

Abstract: A solid-state imaging device includes, in a semiconductor substrate, a pixel portion provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain an electric signal and a peripheral circuit portion disposed on the periphery of the pixel portion, wherein a gate insulating film of aMOS transistor in the peripheral circuit portion is composed of a silicon oxynitride film, a gate insulating film of aMOS transistor in the pixel portion is composed of a silicon oxynitride film, and an oxide film is disposed just above the photoelectric conversion portion in the pixel portion.

Abstract: An imaging device that includes a substrate, a photoelectric conversion section disposed in the substrate, an element isolation region disposed adjacent to the photoelectric conversion section, a floating diffusion electrically connected to the photoelectric conversion section, an amplification transistor having a gate electrode and an active region, and a contact section disposed on the gate electrode of the amplification transistor. The contact section overlaps the active region of the amplification transistor. The floating diffusion is electrically connected to the gate electrode of the amplification transistor via the contact section. The width of the gate electrode of the amplification transistor is larger than a width of the active region of the amplification transistor. The photoelectric conversion section includes a first type impurity, and the element isolation region includes a second type impurity having a conductivity opposite to the first type impurity.