Abstract: Improved is performance of a solid-state image sensor that detects presence or absence of a photon. The solid-state image sensor includes a light-receiving substrate and a logic substrate. In the solid-state image sensor, there is disposed, on the light-receiving substrate, a plurality of avalanche photodiodes, each of the avalanche photodiodes generating a current corresponding to incident of a photon. Furthermore, in the solid-state image sensor, there is disposed, on the logic substrate, a counter that counts the number of photons on the basis of a current of a selected avalanche photodiode among the plurality of avalanche photodiodes.

Abstract: A light-receiving apparatus (1a) includes a counting unit (11), a setting unit (12), and an acquiring unit (13). The counting unit is configured to measure a detection number of times that represents the number of times incidence of a photon to a light-receiving element has been detected within an exposure period and to output a counted value. The setting unit is configured to set a cycle of updating time information in accordance with an elapsed time during the exposure period. The acquiring unit is configured to acquire the time information indicating a time at which the counted value reaches a threshold before the exposure period elapses.

Abstract: A light-receiving apparatus (1a) includes a counting unit (11), a setting unit (12), and an acquiring unit (13). The counting unit is configured to measure a detection number of times that represents the number of times incidence of a photon to a light-receiving element has been detected within an exposure period and to output a counted value. The setting unit is configured to set a cycle of updating time information in accordance with an elapsed time during the exposure period. The acquiring unit is configured to acquire the time information indicating a time at which the counted value reaches a threshold before the exposure period elapses.

Abstract: Improved is performance of a solid-state image sensor that detects presence or absence of a photon. The solid-state image sensor includes a light-receiving substrate and a logic substrate. In the solid-state image sensor, there is disposed, on the light-receiving substrate, a plurality of avalanche photodiodes, each of the avalanche photodiodes generating a current corresponding to incident of a photon. Furthermore, in the solid-state image sensor, there is disposed, on the logic substrate, a counter that counts the number of photons on the basis of a current of a selected avalanche photodiode among the plurality of avalanche photodiodes.

Abstract: A light-receiving apparatus (1a) includes a counting unit (11), a setting unit (12), and an acquiring unit (13). The counting unit is configured to measure a detection number of times that represents the number of times incidence of a photon to a light-receiving element has been detected within an exposure period and to output a counted value. The setting unit is configured to set a cycle of updating time information in accordance with an elapsed time during the exposure period. The acquiring unit is configured to acquire the time information indicating a time at which the counted value reaches a threshold before the exposure period elapses.

Abstract: A light receiving element capable of reducing at least either power consumption or a dead time while reducing an input voltage to a readout circuit is proposed. There is provided a light receiving element (200) including a photon response multiplication part (210) that includes a charge multiplication region capable of multiplying a charge generated in response to incidence of a photon, a first resistor part (211) that is connected at one end to one end of the photon response multiplication part and has a resistance value larger than a resistance value of the photon response multiplication part, a second resistor part (212) that is connected at one end to the other end of the first resistor part, and a readout unit (230) that is connected to the other end of the first resistor part and reads an output from the photon response multiplication part via the first resistor part.

Abstract: A solid-state imaging device according to an embodiment includes a plurality of pixels (20a) arrayed in a two-dimensional lattice, and a control unit (115). The pixel includes a first light receiving element (401a) that outputs a first photocurrent corresponding to received light, a second light receiving element (401b) that outputs a second photocurrent corresponding to received light, a conversion unit (300) that converts a current into a voltage, an output unit (320 or 330) that detects an event based on a change in the voltage converted by the conversion unit, and outputs a detection signal indicating a detection result of the detection, and a switch unit (113a) that performs switching of switching the current to be converted into the voltage by the conversion unit between the first photocurrent and the second photocurrent. The control unit controls the switching performed by the switch unit.

Abstract: A light-receiving apparatus (1a) includes a counting unit (11), a setting unit (12), and an acquiring unit (13). The counting unit is configured to measure a detection number of times that represents the number of times incidence of a photon to a light-receiving element has been detected within an exposure period and to output a counted value. The setting unit is configured to set a cycle of updating time information in accordance with an elapsed time during the exposure period. The acquiring unit is configured to acquire the time information indicating a time at which the counted value reaches a threshold before the exposure period elapses.

Abstract: A solid-state imaging device according to an embodiment includes a plurality of pixels (20a) arrayed in a two-dimensional lattice, and a control unit (115). The pixel includes a first light receiving element (401a) that outputs a first photocurrent corresponding to received light, a second light receiving element (401b) that outputs a second photocurrent corresponding to received light, a conversion unit (300) that converts a current into a voltage, an output unit (320 or 330) that detects an event based on a change in the voltage converted by the conversion unit, and outputs a detection signal indicating a detection result of the detection, and a switch unit (113a) that performs switching of switching the current to be converted into the voltage by the conversion unit between the first photocurrent and the second photocurrent. The control unit controls the switching performed by the switch unit.

Abstract: An imaging device according to the present disclosure includes: a pixel including a photoelectric converter configured to generate a signal in response to entering light, a storage configured to store data corresponding to the signal, and an output section configured to output the data stored in the storage; and a controller configured to control the output section to output the data in a case where the data stored in the storage satisfies a predetermined condition.

Abstract: An imaging device according to the present disclosure includes: a pixel including a photoelectric converter configured to generate a signal in response to entering light, a storage configured to store data corresponding to the signal, and an output section configured to output the data stored in the storage; and a controller configured to control the output section to output the data in a case where the data stored in the storage satisfies a predetermined condition.

Abstract: According to one embodiment, a solid state imaging device includes an image CDS processing unit that outputs a pixel signal based on a difference between a pixel voltage read from a pixel during a reset period and a pixel voltage read from the pixel during a signal read period, a temperature sensor that outputs a diode voltage when a diode current is changed, a temperature CDS processing unit that outputs a temperature measurement value based on a difference of the diode voltage at the time when the diode current is changed, and a timing generator that controls the reset period, the signal read period, and timing of changing the diode current of the temperature sensor.

Abstract: According to one embodiment, a solid state imaging device includes an image CDS processing unit that outputs a pixel signal based on a difference between a pixel voltage read from a pixel during a reset period and a pixel voltage read from the pixel during a signal read period, a temperature sensor that outputs a diode voltage when a diode current is changed, a temperature CDS processing unit that outputs a temperature measurement value based on a difference of the diode voltage at the time when the diode current is changed, and a timing generator that controls the reset period, the signal read period, and timing of changing the diode current of the temperature sensor.

Abstract: According to one embodiment, a pixel array unit, a column ADC circuit, and a calculation circuit are provided. In the pixel array unit, pixels accumulating photoelectric converted charges are arranged in a matrix form. The column ADC circuit performs count operation based on phase relationship between a first clock and a second clock of which cycle is different from that of the first clock by looking up a comparison result between a reference voltage and a pixel signal that is read from the pixel. The calculation circuit calculates an AD conversion value of the pixel signal on the basis of a count result of the column ADC circuit.

Abstract: According to one embodiment, a solid state imaging device includes an imaging unit that outputs imaging data by performing an imaging operation, a temperature sensor that outputs a diode voltage according to a diode current, and an output circuit that shares a part of a circuit with the imaging unit and outputs temperature data based on the diode voltage outputted from the temperature sensor in the same semiconductor chip.

Abstract: According to one embodiment, S (S is an integer equal to or larger than two) number of sub counters each count S number of clocks of different frequencies, and a clock switching unit is provided for each sub counter and starts a counting operation of a sub counter of a next stage after finishing a counting operation in a sub counter of a local stage.

Abstract: According to one embodiment, a solid state imaging device includes an imaging unit that outputs imaging data by performing an imaging operation, a temperature sensor that outputs a diode voltage according to a diode current, and an output circuit that shares a part of a circuit with the imaging unit and outputs temperature data based on the diode voltage outputted from the temperature sensor in the same semiconductor chip.

Abstract: According to one embodiment, a solid state imaging device includes an image CDS processing unit that outputs a pixel signal based on a difference between a pixel voltage read from a pixel during a reset period and a pixel voltage read from the pixel during a signal read period, a temperature sensor that outputs a diode voltage when a diode current is changed, a temperature CDS processing unit that outputs a temperature measurement value based on a difference of the diode voltage at the time when the diode current is changed, and a timing generator that controls the reset period, the signal read period, and timing of changing the diode current of the temperature sensor.

Abstract: According to one embodiment, S (S is an integer equal to or larger than two) number of sub counters each count S number of clocks of different frequencies, and a clock switching unit is provided for each sub counter and starts a counting operation of a sub counter of a next stage after finishing a counting operation in a sub counter of a local stage.