Abstract: A vehicle control apparatus is to be applied to a vehicle including a torque converter and an engine. The vehicle control apparatus includes a turbine hub, a lock-up piston, a damper mechanism, and a control system. The damper mechanism permits relative rotation between a hub of the turbine hub and a cylindrical part of the lock-up piston. The control system controls the engine. The control system calculates, with the lock-up piston engaged with a crankshaft of the engine, a PV value that is a product of a sliding surface pressure and a sliding speed between the hub and the cylindrical part. When the PV value is greater than a threshold, the control system changes an engine torque more gradually than when the PV value is equal to or less than the threshold. The engine torque is an output torque of the crankshaft.

Abstract: The present disclosure provides a quality control substance for use in the analysis of erythrocytes, which can be prepared safely with easily available raw materials, which has an excellent preservation stability, and which can be used in the analysis of sediments in a sample. This quality control substance includes artificial particles whose form as observed with a microscope is similar to the form of erythrocytes as observed therewith.

Abstract: The present disclosure provides a quality control substance for use in the analysis of leukocytes, which can be prepared safely with easily available raw materials, which has excellent preservation stability, and which can be used in the analysis of sediments in a sample. This quality control substance includes artificial particles whose form as observed with a microscope is similar to the form of leukocytes as observed therewith.

Abstract: A semiconductor device according to the present disclosure is an RC-IGBT in which an IGBT region 10 and a diode region 20 are provided adjacent to each other. The diode region 20 includes a p-type anode layer 25 provided on a first principal surface side of an n?-type drift layer 1, a p-type contact layer 24 provided on the first principal surface side of the p-type anode layer 25 and at a surface layer of a semiconductor substrate on the first principal surface side and connected with an emitter electrode 6, and an n+-type cathode layer 26 provided at a surface layer of the semiconductor substrate on a second principal surface side. The p-type contact layer 24 contains aluminum as p-type impurities, and the thickness of the p-type contact layer 24 is smaller than the thickness of an n+-type source layer 13 provided in the IGBT region 10.

Abstract: A semiconductor device according to the present disclosure is an RC-IGBT in which an IGBT region 10 and a diode region 20 are provided adjacent to each other. The diode region 20 includes a p-type anode layer 25 provided on a first principal surface side of an n?-type drift layer 1, a p-type contact layer 24 provided on the first principal surface side of the p-type anode layer 25 and at a surface layer of a semiconductor substrate on the first principal surface side and connected with an emitter electrode 6, and an n+-type cathode layer 26 provided at a surface layer of the semiconductor substrate on a second principal surface side. The p-type contact layer 24 contains aluminum as p-type impurities, and the thickness of the p-type contact layer 24 is smaller than the thickness of an n+-type source layer 13 provided in the IGBT region 10.

Abstract: A seek control system is used for a magneto-optic disk unit which has an optical head driven by a VCM positioner, two lens actuators disposed on the optical head, and respective object lenses disposed on the lens actuators for passing first and second beams (erase and write beams) to irradiate an identical track on a medium thereby to record and reproduce data thereto and therefrom. To shorten an access time needed for accessing a target track through a lens seek operation carried out by driving the two lens actuators and to prevent a deviation (off-track) of the second beam from the target track during the VCM positioner seek operation according to the first beam and shorten an access time, upon receiving a seek instruction from a higher device respective, exclusive use processors carry out the lens seek control of the first and second beams, in parallel.