Abstract: A semiconductor device includes a semiconductor element and a first connection member. The semiconductor element includes a substrate and an electrode pad. The substrate includes a transistor formation region, in which a transistor is formed and which is shaped to be non-quadrangular. The electrode pad is located on the transistor formation region. The first connection member is connected to the electrode pad at one location. The electrode pad is arranged to cover a center of gravity of the transistor formation region in a plan view of the electrode pad. In the plan view, a connection region in which the first connection member is connected to the electrode pad includes a center of gravity position of the transistor formation region.

Abstract: Disclosed is a switch device including a first terminal, a second terminal, a third terminal, a switch element disposed between the first terminal and the second terminal, a control line that reaches a control end of the switch element from the third terminal, a first circuit block that is disposed on the control line and is configured to drive the switch element according to a control signal supplied to the third terminal, at least one second circuit block, each second circuit block being connected to a corresponding one of branch power supply lines that branch from the control line, a first resistor disposed between the third terminal and the first circuit block, and at least one second resistor, each second resistor being disposed on a corresponding one of the branch power supply lines.

Abstract: A semiconductor device includes a semiconductor element and a first connection member. The semiconductor element includes a substrate and an electrode pad. The substrate includes a transistor formation region, in which a transistor is formed and which is shaped to be non-quadrangular. The electrode pad is located on the transistor formation region. The first connection member is connected to the electrode pad at one location. The electrode pad is arranged to cover a center of gravity of the transistor formation region in a plan view of the electrode pad. In the plan view, a connection region in which the first connection member is connected to the electrode pad includes a center of gravity position of the transistor formation region.