Abstract: The present invention provides a compound which has an effect of inhibiting amyloid ß production, especially an effect of inhibiting selective BACE1, and which is useful as a therapeutic or prophylactic agent for diseases induced by production, secretion and/or deposition of amyloid ß proteins. A compound of the formula (IA) or the like, wherein -A1- is alkylene optionally substituted with one or more halogen; R2 is substituted or unsubstituted alkyl or the like; R3 and R4 are each independently a hydrogen atom, halogen, alkyl or haloalkyl or the like; R5 is a hydrogen atom or halogen; A4 is N or CR6 wherein R6 is a hydrogen atom, halogen, or substituted or unsubstituted alkyl; A5 is NR7 or CR8R9; A6 is CR18 or N; R18 is a hydrogen atom; R7 is substituted or unsubstituted alkyl; R8 and R9 are each independently a hydrogen atom, halogen, alkyl or haloalkyl or the like; and Ring B is bicyclic ring; or a pharmaceutically acceptable salt thereof.

Abstract: A hard laminated Mm wherein a layer A and a layer B having specific compositions are deposited alternately so that the compositions of layer A and layer B are different. The thickness of layer A per layer is twice or more the thickness of layer B per layer, the thickness of layer B per layer is 5 nm or more, and the thickness of layer A per layer is 200 nm or less.

Abstract: A hard laminated film wherein a layer A and a layer B having specific compositions are deposited alternately so that the compositions of layer A and layer B are different. The thickness of layer A per layer is twice or more the thickness of layer B per layer, the thickness of layer B per layer is 0.5 nm or more, and the thickness of layer A per layer is 200 nm or less. Layer A has a cubic rock-salt crystal structure such as that of Ti, Cr, Al, V nitride, carbonitride or carbide, and layer B is a hard film having a crystal structure other than cubic such as that of BN, BCN, SiN, SiC, SiCN, B—C, Cu, CuN, CuCN or metallic Cu. Alternatively, layer A has a chemical composition satisfying the following formula (1), and layer B has a chemical composition satisfying the following formula (2). Cr(BaCbN1-a-b-cOc)??Layer A 0?a?0.15, 0?b?0.3, 0?c?0.1, 0.2?e?1.1??(1) B1-s-tCsNt??Layer B 0?s 0.25, (1?s?t)/t?1.

Abstract: A hard laminated film wherein a layer A and a layer B having specific compositions are deposited alternately so that the compositions of layer A and layer B are different. The thickness of layer A per layer is twice or more the thickness of layer B per layer, the thickness of layer B per layer is 0.5 nm or more, and the thickness of layer A per layer is 200 nm or less. Layer A has a cubic rock-salt crystal structure such as that of Ti, Cr, Al, V nitride, carbonitride or carbide, and layer B is a hard film having a crystal structure other than cubic such as that of BN, BCN, SiN, SiC, SiCN, B—C, Cu, CuN, CuCN or metallic Cu. Alternatively, layer A has a chemical composition satisfying the following formula (1), and layer B has a chemical composition satisfying the following formula (2). Layer A: Cr(BaCbN1-a-b-cOc) 0?a?0.15, 0?b?0.3, 0?c?0.1, 0.2?e?1.1??(1) Layer B: B1-s-tCsNt 0?s 0.25, (1-s-t)/t?1.

Abstract: A hard film for cutting tools which is composed of (Ti1?a?b?c?d, Ala, Crb, Sic, Bd)(C1?eNe) 0.5?a?0.8, 0.06?b, 0?c?0.1, 0?d?0.1, 0?c+d?0.1, a+b+c+d<1, 0.5?e?1 (where a, b, c, and d denote respectively the atomic ratios of Al, Cr, Si, and B, and e denotes the atomic ratio of N).

Abstract: A hard film for cutting tools which is composed of (Ti1-a-b-c-d, Ala, Crb, Sic, Bd)(C1-eNe) 0.5?a?0.8, 0.06?b, 0?c?0.1, 0?d?0.1, 0?c+d?0.1, a+b+c+d<1, 0.5?e?1 (where a, b, c, and d denote respectively the atomic ratios of Al, Cr, Si, and B, and e denotes the atomic ratio of N.

Abstract: A hard laminated film wherein a layer A and a layer B having specific compositions are deposited alternately so that the compositions of layer A and layer B are different. The thickness of layer A per layer is twice or more the thickness of layer B per layer, the thickness of layer B per layer is 0.5 nm or more, and the thickness of layer A per layer is 200 nm or less. Layer A has a cubic rock-salt crystal structure such as that of Ti, Cr, Al, V nitride, carbonitride or carbide, and layer B is a hard film having a crystal structure other than cubic such as that of BN, BCN, SiN, SiC, SiCN, B—C, Cu, CuN, CuCN or metallic Cu. Alternatively, layer A has a chemical composition satisfying the following formula (1), and layer B has a chemical composition satisfying the following formula (2). Layer A: Cr(BaCbN1-a-b-cOc) 0?a?0.15, 0?b?0.3, 0?c?0.1, 0.2?e?1.1??(1) Layer B: B1-s-tCsNt 0?s 0.25, (1?s?t)/t?1.

Abstract: A hard film for cutting tools which is composed of (Ti1?a?b?c?d, Ala, Crb, Sic, Bd) (C1?eNe) 0.5?a?0.8, 0.06?b, 0?c?0.1, 0?d?0.1, 0?c+d?0.1, a+b+c+d<1, 0.5?e?1 (where a, b, c, and d denote respectively the atomic ratios Al, Cr, Si, and B, and e denotes the atomic ratio of N.

Abstract: A hard film for cutting tools which is composed of

Abstract: A hard film for cutting tools which is composed of (Ti1−a−b−c−d, Ala, Crb, Sic, Bd)(C1−aNe) 0.5≦a≦0.8, 0.06≦b, 0≦c≦0.1, 0≦d≦0.1, 0≦c+d≦0.1, a+b+c+d<1, 0.5≦e≦1 (where a, b, c, and d denote respectively the atomic ratios Al, Cr, Si, and B, and e denotes the atomic ratio of N.

Abstract: A hard film for cutting tools which is composed of

Abstract: To provide an evaporation source and an arc evaporation apparatus in which an evaporation material as a cathode of arc discharge, and a magnetic field generating source arranged so that all lines of magnetic force crossing the evaporation surface of the evaporation material cross substantially vertically are arranged whereby the number of molten particles arriving at a substrate by the magnetic field can be reduced, and deviation of occurrence of arc spots can be suppressed.