Patents by Inventor Kazuki Takeshima
Kazuki Takeshima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7439550Abstract: A semiconductor light emitting device can be configured to prevent diffusion migration of components constituting a linear electrode. The semiconductor light emitting device can include a substrate, at least one semiconductor layer formed on the substrate and having a topmost semiconductor layer, a pad electrode formed from a plurality of layers provided on the topmost semiconductor layer, and a linear electrode provided on the topmost semiconductor layer. The linear electrode can be configured to overlap the topmost semiconductor layer except for an area occupied by the pad electrode. The linear electrode can also be configured to make contact with part of the pad electrode, and form an ohmic contact with the topmost semiconductor layer. The pad electrode can include, as one of the plurality of layers, a barrier metal layer that covers part of or all of an upper surface and/or a sidewall of the linear electrode at a contact area between the linear electrode and the pad electrode.Type: GrantFiled: March 2, 2006Date of Patent: October 21, 2008Assignee: Stanley Electric Co., Ltd.Inventors: Yuko Tomioka, Seiichiro Kobayashi, Kazuki Takeshima
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Publication number: 20060197099Abstract: A semiconductor light emitting device can be configured to prevent diffusion migration of components constituting a linear electrode. The semiconductor light emitting device can include a substrate, at least one semiconductor layer formed on the substrate and having a topmost semiconductor layer, a pad electrode formed from a plurality of layers provided on the topmost semiconductor layer, and a linear electrode provided on the topmost semiconductor layer. The linear electrode can be configured to overlap the topmost semiconductor layer except for an area occupied by the pad electrode. The linear electrode can also be configured to make contact with part of the pad electrode, and form an ohmic contact with the topmost semiconductor layer. The pad electrode can include, as one of the plurality of layers, a barrier metal layer that covers part of or all of an upper surface and/or a sidewall of the linear electrode at a contact area between the linear electrode and the pad electrode.Type: ApplicationFiled: March 2, 2006Publication date: September 7, 2006Inventors: Yuko Tomioka, Seiichiro Kobayashi, Kazuki Takeshima
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Patent number: 6946312Abstract: A ball-up preventive layer is formed on a first substrate. A bonding layer made of eutectic material is formed on the ball-up preventive layer. A semiconductor light emitting structure is formed on a second substrate. A first electrode is formed at least partially on the semiconductor light emitting structure. A barrier layer is formed on the first electrode. A metal layer is formed on the barrier layer. The bonding layer and the metal layer are bonded together. The second substrate is removed from the bonded structure. A second electrode is formed on a partial surface area of the semiconductor light emitting structure exposed on a surface of the bonded structure to obtain a semiconductor light emitting device.Type: GrantFiled: February 25, 2005Date of Patent: September 20, 2005Assignee: Stanley Electric Co., Ltd.Inventors: Satoshi Kon, Kazuki Takeshima, Junichi Sonoda
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Publication number: 20050142677Abstract: A ball-up preventive layer is formed on a first substrate. A bonding layer made of eutectic material is formed on the ball-up preventive layer. A semiconductor light emitting structure is formed on a second substrate. A first electrode is formed at least partially on the semiconductor light emitting structure. A barrier layer is formed on the first electrode. A metal layer is formed on the barrier layer. The bonding layer and the metal layer are bonded together. The second substrate is removed from the bonded structure. A second electrode is formed on a partial surface area of the semiconductor light emitting structure exposed on a surface of the bonded structure to obtain a semiconductor light emitting device.Type: ApplicationFiled: February 25, 2005Publication date: June 30, 2005Applicant: Stanley Electric Co., Ltd.Inventors: Satoshi Kon, Kazuki Takeshima, Junichi Sonoda
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Patent number: 6888166Abstract: A ball-up preventive layer is formed on a first substrate. A bonding layer made of eutectic material is formed on the ball-up preventive layer. A semiconductor light emitting structure is formed on a second substrate. A first electrode is formed at least partially on the semiconductor light emitting structure. A barrier layer is formed on the first electrode. A metal layer is formed on the barrier layer. The bonding layer and the metal layer are bonded together. The second substrate is removed from the bonded structure. A second electrode is formed on a partial surface area of the semiconductor light emitting structure exposed on a surface of the bonded structure to obtain a semiconductor light emitting device.Type: GrantFiled: September 9, 2003Date of Patent: May 3, 2005Assignee: Stanley Electric Co., Ltd.Inventors: Satoshi Kon, Kazuki Takeshima, Junichi Sonoda
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Publication number: 20040191939Abstract: A ball-up preventive layer is formed on a first substrate. A bonding layer made of eutectic material is formed on the ball-up preventive layer. A semiconductor light emitting structure is formed on a second substrate. A first electrode is formed at least partially on the semiconductor light emitting structure. A barrier layer is formed on the first electrode. A metal layer is formed on the barrier layer. The bonding layer and the metal layer are bonded together. The second substrate is removed from the bonded structure. A second electrode is formed on a partial surface area of the semiconductor light emitting structure exposed on a surface of the bonded structure to obtain a semiconductor light emitting device.Type: ApplicationFiled: September 9, 2003Publication date: September 30, 2004Applicant: Stanley Electric Co., Ltd.Inventors: Satoshi Kon, Kazuki Takeshima, Junichi Sonoda
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Publication number: 20020160126Abstract: The steps of forming electrodes on one surface of a first substrate, forming electrodes on one surface of a second substrate, said second substrate opposing to said first substrate; preparing a phase boundary of the first substrate, the phase boundary allowing liquid-crystal molecules to align parallel to said substrate; preparing a phase boundary of the second substrate, the phase boundary allowing liquid-crystal molecules to align vertical to said substrate; filling a gap between said first and second substrates with liquid crystal to which a polymerizable material is added; and polymerizing the material added to the liquid crystal are employed. Even when a liquid-crystal cell is relatively thick, a high-speed operation can be achieved, and its response speed is rarely lowered in operation for an intermediate gradation, and the effective aperture ratio is increased.Type: ApplicationFiled: November 29, 2000Publication date: October 31, 2002Inventors: Yasuo Toko, Kiyoshi Ando, Yoshihisa Iwamoto, Kazuki Takeshima
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Publication number: 20020067329Abstract: A method of driving a liquid-crystal device having a gap of 15 &mgr;m to 200 &mgr;m between transparent substrates, a first electrode and a second electrode formed on opposing surfaces of the substrates, and liquid crystal filled in the gap between the substrates, the liquid crystal changing direction by applying a driving voltage, includes the steps of (a) applying a first waveform to obtain a first optical characteristic of the liquid crystal and (b) applying a second waveform to obtain a second optical characteristic of the liquid crystal other than the first optical characteristic, the second waveform having an effective voltage lower by 10 V to 500 V than an effective voltage of the first waveform.Type: ApplicationFiled: October 15, 2001Publication date: June 6, 2002Applicant: Stanley Electric Co., Ltd.Inventors: Yasuo Toko, Yoshihisa Iwamoto, Kazuki Takeshima