Abstract: The semiconductor device configures a cascode-type high voltage element comprising a plurality of low voltage elements connected in series, wherein the number of stages of connected low voltage elements is reduced, and the high voltage element has desired withstand voltage, without limiting the withstand voltage of the gate oxide film of the low voltage elements. The semiconductor device comprises a first semiconductor element and one or more second semiconductor elements connected in series, wherein the first and the second semiconductor elements have a control signal output terminal between a source terminal and a drain terminal or between an emitter terminal and a collector terminal; and a gate terminal of the one or more second semiconductor elements is connected to the control signal output terminal of the first or second semiconductor element connected in series adjacently to the source or emitter side of said one or more second semiconductor elements.

Abstract: In an article processing apparatus (1), a plurality of hoppers (12) are disposed in a circular shape and each of the plurality of hoppers (12) causes an article (100) received from an upstream side to temporarily stay and then discharges the article (100) toward a discharge opening (20) on a downstream side. Each of the hoppers (12) includes: a body portion (12A); a slide portion (12B) provided on a downstream side of the body portion (12A), and having a slide surface (120) extending continuously from the body portion (12A); and a gate (12C) provided on the body portion (12A) to switch between a first state where the gate (12C) causes the article (100) to stay in the body portion (12A) and a second state where the gate (12C) releases the staying of the article (100) to cause the article (100) to slide down from the body portion (12A).

Abstract: A temperature abnormality of the power module is accurately detected. A power conversion device including a power semiconductor module with a switching element, includes: a gate driver circuit configured to drive a switching element and transmitting a response signal upon a switching operation of the switching element; a control unit device configured to output to a gate driver circuit an instruction signal for switching; a temperature detection unit configured to calculate a bonding temperature of the switching element based on a response signal to the instruction signal; and a calculation unit configured to determine a state of a power semiconductor module according to a bonding temperature calculated by the temperature detection unit and the response signal.

Abstract: A temperature abnormality of the power module is accurately detected. A power conversion device including a power semiconductor module with a switching element, includes: a gate driver circuit configured to drive a switching element and transmitting a response signal upon a switching operation of the switching element; a control unit device configured to output to a gate driver circuit an instruction signal for switching; a temperature detection unit configured to calculate a bonding temperature of the switching element based on a response signal to the instruction signal; and a calculation unit configured to determine a state of a power semiconductor module according to a bonding temperature calculated by the temperature detection unit and the response signal.

Abstract: A power converter is provided with a power semiconductor module having a switching element. The power converter includes a gate drive circuit, a first detection unit, a second detection unit, a time measuring unit, and an abnormality diagnostic unit. The gate drive circuit drives the switching element and outputs a feedback signal based on a switching operation of the switching element. The first detection unit detects a change in a feedback signal of an upper arm of the power converter. The second detection unit detects a change in a feedback signal of a lower arm of the power converter. The time measuring unit measures a difference between detection timings of a signal change by the first detection unit and a signal change by the second detection unit. The abnormality diagnostic unit performs diagnosis of the power converter based on a measurement result by the time measuring unit.

Abstract: A power converter is provided with a power semiconductor module having a switching element. The power converter includes a gate drive circuit, a first detection unit, a second detection unit, a time measuring unit, and an abnormality diagnostic unit. The gate drive circuit drives the switching element and outputs a feedback signal based on a switching operation of the switching element. The first detection unit detects a change in a feedback signal of an upper arm of the power converter. The second detection unit detects a change in a feedback signal of a lower arm of the power converter. The time measuring unit measures a difference between detection timings of a signal change by the first detection unit and a signal change by the second detection unit. The abnormality diagnostic unit performs diagnosis of the power converter based on a measurement result by the time measuring unit.

Abstract: Provided is a silicon carbide semiconductor device in which SiC-MOSFETs are formed within an active region of an n-type silicon carbide semiconductor substrate, and a p+-type semiconductor region is formed on an upper surface of an epitaxial layer so as to surround the active region.

Abstract: Provided is a silicon carbide semiconductor device in which SiC-MOSFETs are formed within an active region of an n-type silicon carbide semiconductor substrate, and a p+-type semiconductor region is formed on an upper surface of an epitaxial layer so as to surround the active region.

Abstract: In an optical modulator 115 of an embodiment, an optical waveguide core 121 is configured from an n? type semiconductor region 134, a gate insulating film 136 on the n? type semiconductor region 134, and a p? type semiconductor region 137 on the gate insulating film 136. Further, a width W1 of the n? type semiconductor region 134 and a width W1 of the p? type semiconductor region 137 are equally formed and are layered without being shifted. Therefore, an optical modulator having stable optical characteristics can be provided.

Abstract: In an optical modulator 115 of an embodiment, an optical waveguide core 121 is configured from an n? type semiconductor region 134, a gate insulating film 136 on the n? type semiconductor region 134, and a p? type semiconductor region 137 on the gate insulating film 136. Further, a width W1 of the n? type semiconductor region 134 and a width W1 of the p? type semiconductor region 137 are equally formed and are layered without being shifted. Therefore, an optical modulator having stable optical characteristics can be provided.

Abstract: In order to provide a highly reliable silicon-germanium semiconductor optical element of high luminous efficiency or of low power consumption that can reduce or prevent the occurrence of dislocations or crystal defects on the interface between a light emitting layer or a light absorption layer and a cladding layer, in a silicon-germanium semiconductor optical element, a germanium protective layer 11 of non-light emission is disposed between a germanium light emitting layer or the light absorption layer 10 and a cladding layer 12 disposed above a substrate. The germanium protective layer 11 has the electrical conductivity different from electrical conductivity of the germanium light emitting layer or the light absorption layer 10.

Abstract: The light emitting device includes an active layer formed on a semiconductor substrate for emitting light, a semiconductor layer of a first conductivity type electrically connected to one end of the active layer, a semiconductor layer of a second conductivity type electrically connected to the other end of the active layer, first and second electrodes, a feedback mechanism for laser oscillation, and a waveguide for guiding the light emitted from the active layer, in which the active layer is made of a semiconductor having an affinity with a silicon CMOS process, and the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type, and the waveguide are each made of silicon as a part of the semiconductor substrate.

Abstract: To provide a light-emitting element where electrons are efficiently injected into a Ge light emission layer and light can be efficiently emitted, the light-emitting element has a barrier layer 3 which is formed on an insulating film 2, worked in a size in which quantum confinement effect manifests and made of monocrystalline Si, a p-type diffused layer electrode 5 and an n-type diffused layer electrode 6 respectively provided at both ends of the barrier layer 3, and a monocrystalline Ge light emission part 13 provided on the barrier layer 3 between the electrodes 5, 6. At least a part of current that flows between the electrodes 5, 6 flows in the barrier layer 3 in a horizontal direction with respect to a substrate 1.

Abstract: To provide a light-emitting element where electrons are efficiently injected into a Ge light emission layer and light can be efficiently emitted, the light-emitting element has a barrier layer 3 which is formed on an insulating film 2, worked in a size in which quantum confinement effect manifests and made of monocrystalline Si, a p-type diffused layer electrode 5 and an n-type diffused layer electrode 6 respectively provided at both ends of the barrier layer 3, and a monocrystalline Ge light emission part 13 provided on the barrier layer 3 between the electrodes 5, 6. At least a part of current that flows between the electrodes 5, 6 flows in the barrier layer 3 in a horizontal direction with respect to a substrate 1.

Abstract: An APD in which a first undoped semiconductor region and a second undoped semiconductor region having different semiconductor materials and arranged on an insulating film configure a photo-absorption layer and a multiplying layer, respectively, is employed, whereby crystalline of an interface between the photo-absorption layer and the multiplying layer becomes favorable, and a dark current caused by crystal defects can be decreased. Accordingly, light-receiving sensitivity of an avalanche photodiode can be improved. Further, doping concentration of the light-receiving layer and the multiplying layer can be made small. Therefore, a junction capacitance of the diode can be decreased, and a high-speed operation becomes possible.

Abstract: In order to provide a highly reliable silicon-germanium semiconductor optical element of high luminous efficiency or of low power consumption that can reduce or prevent the occurrence of dislocations or crystal defects on the interface between a light emitting layer or a light absorption layer and a cladding layer, in a silicon-germanium semiconductor optical element, a germanium protective layer 11 of non-light emission is disposed between a germanium light emitting layer or the light absorption layer 10 and a cladding layer 12 disposed above a substrate. The germanium protective layer 11 has the electrical conductivity different from electrical conductivity of the germanium light emitting layer or the light absorption layer 10.

Abstract: The light emitting device includes an active layer formed on a semiconductor substrate for emitting light, a semiconductor layer of a first conductivity type electrically connected to one end of the active layer, a semiconductor layer of a second conductivity type electrically connected to the other end of the active layer, first and second electrodes, a feedback mechanism for laser oscillation, and a waveguide for guiding the light emitted from the active layer, in which the active layer is made of a semiconductor having an affinity with a silicon CMOS process, and the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type, and the waveguide are each made of silicon as a part of the semiconductor substrate.

Abstract: A germanium light-emitting device emitting light at high efficiency is provided by using germanium of small threading dislocation density. A germanium laser diode having a high quality germanium light-emitting layer is attained by using germanium formed over silicon dioxide. A germanium laser diode having a carrier density higher than the carrier density limit that can be injected by existent n-type germanium can be provided using silicon as an n-type electrode.