Abstract: The present invention provides a silica glass crucible for manufacturing a silicon single crystal, in which melt vibration can be controlled more certainly and a high yield of single crystal can be realized. A first substantially bubble-free layer 10a having a thickness of 100 ?m-450 ?m is formed on the inner periphery side of an initial melt line zone 10 which has a height of 10 mm-30 mm, of a transparent layer, a bubble-containing layer 10b having a thickness of 100 ?m or more and bubbles with an average diameter of 20 ?m-60 ?m is formed outside the above-mentioned first substantially bubble-free layer 10a, and a second substantially bubble-free layer 10c having a thickness of 300 ?m or more is formed on the inner periphery side in the whole region lower than the above-mentioned initial melt line zone 10.

Abstract: The present invention provides a silica glass crucible for manufacturing a silicon single crystal, in which melt vibration can be controlled more certainly and a high yield of single crystal can be realized. A first substantially bubble-free layer 10a having a thickness of 100 ?m-450 ?m is formed on the inner periphery side of an initial melt line zone 10, which has a height of 10 mm-30 mm, of a transparent layer, a bubble-containing layer 10b having a thickness of 100 ?m or more and bubbles with an average diameter of 20 ?m-60 ?m is formed outside the above-mentioned first substantially bubble-free layer 10a, and a second substantially bubble-free layer 10c having a thickness of 300 ?m or more is formed on the inner periphery side in the whole region lower than the above-mentioned initial melt line zone 10.