Patents by Inventor Kazuko Ikeda
Kazuko Ikeda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150076503Abstract: A light emitting device of the invention includes a thin film transistor, an insulating layer covering the thin film transistor, an electrode which is electrically connected to the thin film transistor through a contact hole formed on the insulating layer, and a light emitting element formed by interposing a light emitting layer between a first electrode which is electrically connected to the electrode and a second electrode. The light emitting device further includes a layer formed of a different material from that of the insulating layer only between the electrode and the first electrode over the insulating layer and the insulating layer.Type: ApplicationFiled: November 25, 2014Publication date: March 19, 2015Inventors: Masayuki SAKAKURA, Shuhei TAKAHASHI, Kazuko IKEDA, Tomoya FUTAMURA
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Patent number: 8980733Abstract: The semiconductor device has a semiconductor layer, a gate electrode which covers an end portion of the semiconductor layer, and an insulating layer for insulating the semiconductor layer and the gate electrode. The film thickness of the insulating layer which insulates a region where an end portion of the semiconductor layer and the gate electrode overlap each other is thicker than the film thickness of the insulating layer which covers the central portion of the semiconductor layer.Type: GrantFiled: October 14, 2010Date of Patent: March 17, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Yukie Suzuki, Yasuyuki Arai, Yoshitaka Moriya, Kazuko Ikeda, Yoshifumi Tanada, Shuhei Takahashi
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Patent number: 8901809Abstract: A light emitting device of the invention includes a thin film transistor, an insulating layer covering the thin film transistor, an electrode which is electrically connected to the thin film transistor through a contact hole formed on the insulating layer, and a light emitting element formed by interposing a light emitting layer between a first electrode which is electrically connected to the electrode and a second electrode. The light emitting device further includes a layer formed of a different material from that of the insulating layer only between the electrode and the first electrode over the insulating layer and the insulating layer.Type: GrantFiled: October 5, 2011Date of Patent: December 2, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masayuki Sakakura, Shuhei Takahashi, Kazuko Ikeda, Tomoya Futamura
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Patent number: 8834989Abstract: An object is to provide a semiconductor device with improved reliability and for which a defect due to an end portion of a semiconductor layer provided in an island-shape is prevented, and a manufacturing method thereof. A structure includes an island-shaped semiconductor layer provided over a substrate, an insulating layer provided over a top surface and a side surface of the island-shaped semiconductor layer, and a gate electrode provided over the island-shaped semiconductor layer with the insulating layer interposed therebetween. In the insulating layer provided to be in contact with the island-shaped semiconductor layer, a region that is in contact with the side surface of the island-shaped semiconductor layer is made to have a lower dielectric constant than a region over the top surface of the island-shaped semiconductor layer.Type: GrantFiled: November 14, 2011Date of Patent: September 16, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kazuko Ikeda, Shinya Sasagawa, Hideomi Suzawa, Shunpei Yamazaki
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Publication number: 20120056214Abstract: A light emitting device of the invention includes a thin film transistor, an insulating layer covering the thin film transistor, an electrode which is electrically connected to the thin film transistor through a contact hole formed on the insulating layer, and a light emitting element formed by interposing a light emitting layer between a first electrode which is electrically connected to the electrode and a second electrode. The light emitting device further includes a layer formed of a different material from that of the insulating layer only between the electrode and the first electrode over the insulating layer and the insulating layer.Type: ApplicationFiled: October 5, 2011Publication date: March 8, 2012Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masayuki SAKAKURA, Shuhei TAKAHASHI, Kazuko IKEDA, Tomoya FUTAMURA
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Publication number: 20120058631Abstract: An object is to provide a semiconductor device with improved reliability and for which a defect due to an end portion of a semiconductor layer provided in an island-shape is prevented, and a manufacturing method thereof. A structure includes an island-shaped semiconductor layer provided over a substrate, an insulating layer provided over a top surface and a side surface of the island-shaped semiconductor layer, and a gate electrode provided over the island-shaped semiconductor layer with the insulating layer interposed therebetween. In the insulating layer provided to be in contact with the island-shaped semiconductor layer, a region that is in contact with the side surface of the island-shaped semiconductor layer is made to have a lower dielectric constant than a region over the top surface of the island-shaped semiconductor layer.Type: ApplicationFiled: November 14, 2011Publication date: March 8, 2012Inventors: Kazuko Ikeda, Shinya Sasagawa, Hideomi Suzawa, Shunpei Yamazaki
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Patent number: 8067772Abstract: An object is to provide a semiconductor device with improved reliability and for which a defect due to an end portion of a semiconductor layer provided in an island-shape is prevented, and a manufacturing method thereof. A structure includes an island-shaped semiconductor layer provided over a substrate, an insulating layer provided over a top surface and a side surface of the island-shaped semiconductor layer, and a gate electrode provided over the island-shaped semiconductor layer with the insulating layer interposed therebetween. In the insulating layer provided to be in contact with the island-shaped semiconductor layer, a region that is in contact with the side surface of the island-shaped semiconductor layer is made to have a lower dielectric constant than a region over the top surface of the island-shaped semiconductor layer.Type: GrantFiled: December 3, 2007Date of Patent: November 29, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kazuko Ikeda, Shinya Sasagawa, Hideomi Suzawa, Shunpei Yamazaki
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Publication number: 20110254004Abstract: A semiconductor device manufactured utilizing an SOI substrate, in which defects due to an end portion of an island-shaped silicon layer are prevented and the reliability is improved, and a manufacturing method thereof. The following are included: an SOI substrate in which an insulating layer and an island-shaped silicon layer are stacked in order over a support substrate; a gate insulating layer provided over one surface and a side surface of the island-shaped silicon layer; and a gate electrode which is provided over the island-shaped silicon layer with the gate insulating layer interposed therebetween. The gate insulating layer is formed such that the dielectric constant in the region which is in contact with the side surface of the island-shaped silicon layer is lower than that over the one surface of the island-shaped silicon layer.Type: ApplicationFiled: June 24, 2011Publication date: October 20, 2011Inventors: Shunpei YAMAZAKI, Kazuko IKEDA, Shinya SASAGAWA, Hideomi SUZAWA
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Patent number: 8038496Abstract: A light emitting device of the invention includes a thin film transistor, an insulating layer covering the thin film transistor, an electrode which is electrically connected to the thin film transistor through a contact hole formed on the insulating layer, and a light emitting element formed by interposing a light emitting layer between a first electrode which is electrically connected to the electrode and a second electrode. The light emitting device further includes a layer formed of a different material from that of the insulating layer only between the electrode and the first electrode over the insulating layer and the insulating layer. The structure of the light emitting device and its manufacturing method reduces the amount of water remaining in the light emitting device and suppresses the deterioration of the light emitting element due to water remaining in the light emitting device.Type: GrantFiled: July 25, 2008Date of Patent: October 18, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masayuki Sakakura, Shuhei Takahashi, Kazuko Ikeda, Tomoya Futamura
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Patent number: 7968884Abstract: A semiconductor device manufactured utilizing an SOI substrate, in which defects due to an end portion of an island-shaped silicon layer are prevented and the reliability is improved, and a manufacturing method thereof. The following are included: an SOI substrate in which an insulating layer and an island-shaped silicon layer are stacked in order over a support substrate; a gate insulating layer provided over one surface and a side surface of the island-shaped silicon layer; and a gate electrode which is provided over the island-shaped silicon layer with the gate insulating layer interposed therebetween. The gate insulating layer is formed such that the dielectric constant in the region which is in contact with the side surface of the island-shaped silicon layer is lower than that over the one surface of the island-shaped silicon layer.Type: GrantFiled: November 27, 2007Date of Patent: June 28, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Kazuko Ikeda, Shinya Sasagawa, Hideomi Suzawa
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Publication number: 20110027980Abstract: The semiconductor device has a semiconductor layer, a gate electrode which covers an end portion of the semiconductor layer, and an insulating layer for insulating the semiconductor layer and the gate electrode. The film thickness of the insulating layer which insulates a region where an end portion of the semiconductor layer and the gate electrode overlap each other is thicker than the film thickness of the insulating layer which covers the central portion of the semiconductor layer.Type: ApplicationFiled: October 14, 2010Publication date: February 3, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei YAMAZAKI, Yukie SUZUKI, Yasuyuki ARAI, Yoshitaka MORIYA, Kazuko IKEDA, Yoshifumi TANADA, Shuhei TAKAHASHI
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Patent number: 7821002Abstract: The semiconductor device has a semiconductor layer, a gate electrode which covers an end portion of the semiconductor layer, and an insulating layer for insulating the semiconductor layer and the gate electrode. The film thickness of the insulating layer which insulates a region where an end portion of the semiconductor layer and the gate electrode overlap each other is thicker than the film thickness of the insulating layer which covers the central portion of the semiconductor layer.Type: GrantFiled: April 23, 2007Date of Patent: October 26, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Yukie Suzuki, Yasuyuki Arai, Yoshitaka Moriya, Kazuko Ikeda, Yoshifumi Tanada, Shuhei Takahashi
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Publication number: 20080293322Abstract: An object of the present invention is to provide a structure and a manufacturing method of a light emitting device, which reduces the amount of water remaining in the light emitting device. Another object of the invention is to provide a structure and a manufacturing method of a light emitting device, which suppresses the deterioration of a light emitting element due to water remaining in the light emitting device. A light emitting device of the invention includes a thin film transistor, an insulating layer covering the thin film transistor, an electrode which is electrically connected to the thin film transistor through a contact hole formed on the insulating layer, and a light emitting element formed by interposing a light emitting layer between a first electrode which is electrically connected to the electrode and a second electrode.Type: ApplicationFiled: July 25, 2008Publication date: November 27, 2008Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masayuki Sakakura, Shuhei Takahashi, Kazuko Ikeda, Tomoya Futamura
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Patent number: 7423373Abstract: An object of the present invention is to provide a structure and a manufacturing method of a light emitting device, which reduces the amount of water remaining in the light emitting device. Another object of the invention is to provide a structure and a manufacturing method of a light emitting device, which suppresses the deterioration of a light emitting element due to water remaining in the light emitting device. A light emitting device of the invention includes a thin film transistor, an insulating layer covering the thin film transistor, an electrode which is electrically connected to the thin film transistor through a contact hole formed on the insulating layer, and a light emitting element formed by interposing a light emitting layer between a first electrode which is electrically connected to the electrode and a second electrode.Type: GrantFiled: March 15, 2005Date of Patent: September 9, 2008Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masayuki Sakakura, Shuhei Takahashi, Kazuko Ikeda, Tomoya Futamura
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Publication number: 20080128703Abstract: An object is to provide a semiconductor device with improved reliability and for which a defect due to an end portion of a semiconductor layer provided in an island-shape is prevented, and a manufacturing method thereof. A structure includes an island-shaped semiconductor layer provided over a substrate, an insulating layer provided over a top surface and a side surface of the island-shaped semiconductor layer, and a gate electrode provided over the island-shaped semiconductor layer with the insulating layer interposed therebetween. In the insulating layer provided to be in contact with the island-shaped semiconductor layer, a region that is in contact with the side surface of the island-shaped semiconductor layer is made to have a lower dielectric constant than a region over the top surface of the island-shaped semiconductor layer.Type: ApplicationFiled: December 3, 2007Publication date: June 5, 2008Inventors: Kazuko Ikeda, Shinya Sasagawa, Hideomi Suzawa, Shunpei Yamazaki
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Publication number: 20080128808Abstract: A semiconductor device manufactured utilizing an SOI substrate, in which defects due to an end portion of an island-shaped silicon layer are prevented and the reliability is improved, and a manufacturing method thereof. The following are included: an SOI substrate in which an insulating layer and an island-shaped silicon layer are stacked in order over a support substrate; a gate insulating layer provided over one surface and a side surface of the island-shaped silicon layer; and a gate electrode which is provided over the island-shaped silicon layer with the gate insulating layer interposed therebetween. The gate insulating layer is formed such that the dielectric constant in the region which is in contact with the side surface of the island-shaped silicon layer is lower than that over the one surface of the island-shaped silicon layer.Type: ApplicationFiled: November 27, 2007Publication date: June 5, 2008Inventors: Shunpei Yamazaki, Kazuko Ikeda, Shinya Sasagawa, Hideomi Suzawa
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Publication number: 20070281400Abstract: The semiconductor device has a semiconductor layer, a gate electrode which covers an end portion of the semiconductor layer, and an insulating layer for insulating the semiconductor layer and the gate electrode. The film thickness of the insulating layer which insulates a region where an end portion of the semiconductor layer and the gate electrode overlap each other is thicker than the film thickness of the insulating layer which covers the central portion of the semiconductor layer.Type: ApplicationFiled: April 23, 2007Publication date: December 6, 2007Inventors: Shunpei Yamazaki, Yukie Suzuki, Yasuyuki Arai, Yoshitaka Moriya, Kazuko Ikeda, Yoshifumi Tanada, Shuhei Takahashi
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Publication number: 20050212420Abstract: An object of the present invention is to provide a structure and a manufacturing method of a light emitting device, which reduces the amount of water remaining in the light emitting device. Another object of the invention is to provide a structure and a manufacturing method of a light emitting device, which suppresses the deterioration of a light emitting element due to water remaining in the light emitting device. A light emitting device of the invention includes a thin film transistor, an insulating layer covering the thin film transistor, an electrode which is electrically connected to the thin film transistor through a contact hole formed on the insulating layer, and a light emitting element formed by interposing a light emitting layer between a first electrode which is electrically connected to the electrode and a second electrode.Type: ApplicationFiled: March 15, 2005Publication date: September 29, 2005Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masayuki Sakakura, Shuhei Takahashi, Kazuko Ikeda, Tomoya Futamura
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Patent number: 5658765Abstract: Disclosed are novel xylanases, a process for producing the enzyme, a microorganism capable of producing the enzyme, a method for the treatment of pulp with the xylanase enzyme, and a process for producing xylose or xylo-oligosaccharide using the enzyme.Type: GrantFiled: September 6, 1995Date of Patent: August 19, 1997Assignee: Novo Nordisk A/SInventors: Yoshitaka Noguchi, Kazuko Ikeda, Eiko Masatsuji, Masahiko Seko