Abstract: An imaging device includes a charge accumulator, a first transistor, and a first capacitive element. The first transistor has a first source, a first drain, and a first gate electrode electrically connected to one of the first source and the first drain. The first capacitive element holds the charges and has a first terminal. A fixed potential is supplied to the other of the first source and the first drain. One of the first source and the first drain is always electrically connected to the first terminal of the first capacitive element from start to end of an exposure period.

Abstract: An imaging device includes a first photoelectric converter, a second photoelectric converter, and a first capacitive element. The first photoelectric converter converts light having a wavelength in a first wavelength region into first electric charge. The second photoelectric converter converts light having a wavelength in a second wavelength region into second electric charge. The second photoelectric converter is arranged at a different height from the first photoelectric converter in a thickness direction of the imaging device. The first capacitive element accumulates the first electric charge and the second electric charge.

Abstract: A camera system includes: a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric conversion layer converting incident light into electric charge; voltage application circuitry that supplies a first voltage and a second voltage less than the first voltage between the first electrode and the second electrode such that the first voltage is applied at least one time in a frame; and a controller that derives a total length of at least one period in which the first voltage is applied in the frame, the total length corresponding to an attenuation ratio set for the frame, and causes the voltage supply circuitry to supply the first voltage in the at least one period having the total length in the frame.

Abstract: An imaging device including a semiconductor substrate; a photoelectric converter that converts incident light into a signal charge, the photoelectric converter being stacked on the semiconductor substrate; a node to which the signal charge is input; a transistor having a source and a drain, one of the source and the drain being connected to the node; and a capacitive element connected between the transistor and a voltage source or a ground. The transistor is configured to switch between a first mode and a second mode, a sensitivity in the first mode being different from a sensitivity in the second mode, and in a cross-sectional view, the capacitive element is located between the semiconductor substrate and the photoelectric converter.

Abstract: A camera system including a photoelectric convertor including a first and second electrode, and a photoelectric conversion layer; and a correction circuit correcting a signal corresponding to a potential change of the second electrode. The photoelectric convertor has a photoelectric conversion characteristic in which rate of change of the photoelectric conversion efficiency with respect to a first bias voltage between the first electrode and the second electrode when the first bias voltage is in a first voltage range, is greater than the rate of change with respect to a second bias voltage when the second bias voltage is in a second voltage range that is higher than the first voltage range, and a bias voltage between the first electrode and the second electrode exists in the first voltage range, and the correction circuit corrects the signal so that variation of an output regarding an amount of incident light becomes linear.

Abstract: An imaging device including: a first imaging cell including a first photoelectric converter that generates a first signal; and a second imaging cell including: a second photoelectric converter that generates a second signal; and a capacitor having a first and second terminal, the first terminal electrically coupled to second photoelectric converter. An area of the first photoelectric converter is greater than an area of the second photoelectric converter in a plan view, the first imaging cell has a first number of saturation charges, and the second imaging cell has a second number of saturation charges, the first number of saturation charges is greater than the second number of saturation charges, and the capacitor has capacitance that causes the second number of saturation charges of the second imaging cell to become greater than the first number of saturation charges of the first imaging cell.

Abstract: An imaging device includes: a photoelectric converter including first and second electrodes, and a photoelectric conversion layer located between the first electrode and the second electrode; a voltage supply circuit applying a bias voltage between the first electrode and the second electrode; an amplifier transistor including a gate electrically connected to the second electrode, the amplifier transistor configured to output a signal corresponding to a potential of the second electrode; and a detection circuit configured to detect a level of the signal from the amplifier transistor. The voltage supply circuit applies the bias voltage in a first voltage range when the level detected by the detection circuit is greater than or equal to a first threshold value, and applies the bias voltage in a second voltage range that is greater than the first voltage range when the level detected by the detection circuit is less than a second threshold value.

Abstract: An imaging device including: a photoelectric converter that converts incident light into a signal charge; a node to which the signal charge is input; a transistor having a source and a drain, one of the source and the drain being connected to the node; and a capacitive element. The capacitive element including a first electrode, a second electrode and a dielectric film sandwiched between the first electrode and the second electrode, the first electrode being connected to the other of the source and the drain of the transistor, the second electrode being connected to a voltage source or a ground. The transistor is configured to switch a first mode and a second mode, a sensitivity in the first mode being different from a sensitivity in the second mode.

Abstract: A camera system includes: a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric conversion layer converting incident light into electric charge; voltage application circuitry; and a controller that derives a duty cycle corresponding to an attenuation ratio set for a first frame and that causes the voltage application circuitry to apply a pulse voltage having the duty cycle between the first electrode and the second electrode in the first frame.

Abstract: An imaging device including: a first pixel and a second pixel that are arranged along a first direction, the first pixel and the second pixel each including a photoelectric converter that converts light into a charge, a charge accumulator that accumulates the charge, and a first transistor one of a source and a drain of which is connected to the charge accumulator; a first line and a second line that each extend along the first direction; first voltage supply circuitry that is connected to the first transistor of the first pixel through the first line; and second voltage supply circuitry that is connected to the first transistor of the second pixel through the second line.

Abstract: An imaging device is provided with an amplification transistor having a gate connected to a charge accumulator, a feedback transistor of which the source or drain is electrically connected to the charge accumulator and the other is connected to the source or drain of the amplification transistor, a current supply that supplies a current to a first node, a first select transistor of which the source or drain is connected to the other of the amplification transistor, a second select transistor of which the source or drain is connected to the source or drain of the amplification transistor, a current source/voltage source switching circuit that selectively connects a current source or a first voltage supply circuit to the other of the first select transistor, and a second voltage supply circuit connected to the other of the second select transistor.

Abstract: An imaging device including: a first photoelectric converter that generates a first signal by photoelectric conversion; a first transistor having a gate configured to be electrically coupled to the first photoelectric converter; a second photoelectric converter that generates a second signal by photoelectric conversion; a capacitor having a first terminal and a second terminal, the first terminal being configured to be electrically coupled to second photoelectric converter, a first potential being applied to the second terminal; and a switch element provided between the gate of the first transistor and the first terminal of the capacitor.

Abstract: An imaging device that includes a semiconductor substrate; a first photoelectric converter that is located in the semiconductor substrate and that generates a first signal charge by photoelectric conversion; a first node to which the first signal charge is input; a capacitor having a first terminal coupled to the first node; a second photoelectric converter that is located in the semiconductor substrate and that generates a second signal charge by photoelectric conversion; a second node to which the second signal charge is input; a transistor having a gate coupled to the second node; and a switch element coupled between the first node and the second node, where a number of saturation charges of a first imaging cell including the first photoelectric converter and the capacitor is greater than a number of saturation charges of a second imaging cell including the second photoelectric converter.

Abstract: An image sensor includes a semiconductor substrate, a first photoelectric converter, and a second photoelectric converter. The semiconductor substrate has an electric-charge storage region. The second photoelectric converter is located between the first photoelectric converter and the semiconductor substrate. The first photoelectric converter includes a first counter electrode, a first pixel electrode, and a first photoelectric conversion layer. The first photoelectric conversion layer is located between the first counter electrode and the first pixel electrode. The second photoelectric converter includes a second counter electrode, a second pixel electrode, and a second photoelectric conversion layer. The second photoelectric conversion layer is located between the second counter electrode and the second pixel electrode. The electric-charge storage region is electrically connected to the first pixel electrode and the second pixel electrode.

Abstract: An imaging device including a first filter that passes a first light and a second light; a second filter that blocks the second light; photoelectric converters that have sensitivity to the first light and the second light; and a processor, in which one of the photoelectric converters detects a light passing through the first filter to generate a first signal, one of the photoelectric converters detects a light passing through the first filter and the second filter to generate a second signal, and the processor performs the second light sensing based on the first signal and the second signal.

Abstract: An imaging device includes a photoelectric converter that converts light into signal charge, a charge accumulation region that accumulates the signal charge, a first transistor having a gate connected to the charge accumulation region, and a common gate amplifier circuit that amplifies an output of the first transistor to output to the charge accumulation region. The common gate amplifier circuit includes a second transistor. One of a source and a drain of the second transistor is connected to one of a source and a drain of the first transistor, and the other of the source and the drain of the second transistor is connected to the charge accumulation region.

Abstract: An imaging device having a semiconductor substrate that includes a first photoelectric converter, and a second photoelectric converter adjacent to the first photoelectric converter. The imaging device further includes a capacitive element one end of which is coupled to the first photoelectric converter, where the first capacitive element at least partly overlaps, in a plan view, with the second photoelectric converter.

Abstract: A camera system including an imaging device that captures a first image by a normal exposure including only one exposure and that captures a second image by a multiple exposure including a plurality of exposures; and a control circuit. The the imaging device captures the second image in a first frame period, and the control circuit determines, based on the second image captured in the first frame period, whether to capture an image by the normal exposure or capture an image by the multiple exposure in a second frame period following the first frame period.

Abstract: An imaging device having an imager that includes first pixels having sensitivity to a first light and second pixels having sensitivity to a second light, a wavelength of the first light being different from a wavelength of the second light. The imager being configured to acquire first image data from the first pixels and being configured to acquire second image data from the second pixels. Each of the first image data and the second image data including an image of a code, the code being configured to output the second light. The imaging device further including an image processor configured to extract an image of the code based on the first image data and the second image data.

Abstract: An imaging device having a pixel including: a photoelectric converter that generates an electric signal through photoelectric conversion of incident light; a first transistor that has a gate coupled to the photoelectric converter and that amplifies the electric signal; and a second transistor that has a gate coupled to the photoelectric converter, one of a source and a drain of the second transistor being coupled to the photoelectric converter. The imaging device further includes a voltage supply circuit configured to supply two or more different voltages to the other of the source and the drain of the second transistor.