Abstract: Provided is a charged particle beam device capable of reducing scattering of a foreign substance collected by a foreign substance collecting unit. The charged particle beam device includes: a sample chamber in which a sample is to be disposed; and a charged particle beam source configured to irradiate the sample with a charged particle beam. The charged particle beam device further includes: a foreign substance attachment/detachment unit from or to which a foreign substance is to detach or attach; and a foreign substance collecting unit provided in the sample chamber and configured to collect a foreign substance dropped from the foreign substance attachment/detachment unit. An opening through which the foreign substance passes is provided in an upper end portion of the foreign substance collecting unit. An area of the opening is smaller than a horizontal cross-sectional area of an internal space of the foreign substance collecting unit.

Abstract: Provided are a charged particle beam device and a charged particle beam adjustment method capable of observing or inspecting a change in observation conditions in a more appropriate beam state while preventing an increase in a time required for each measurement point. The charged particle beam device includes a condenser lens 3 and an objective lens 14 configured to focus an electron beam 4 emitted from an electron source 2, a primary beam scanning deflector 5 or a secondary electron deflector 15, an adjusting element 13 configured to adjust an axis of the electron beam 4, and a control device 9 configured to supply a signal representing a control amount to the adjusting element 13 for control.

Abstract: Provided are a charged particle beam device and a charged particle beam adjustment method capable of observing or inspecting a change in observation conditions in a more appropriate beam state while preventing an increase in a time required for each measurement point. The charged particle beam device includes a condenser lens 3 and an objective lens 14 configured to focus an electron beam 4 emitted from an electron source 2, a primary beam scanning deflector 5 or a secondary electron deflector 15, an adjusting element 13 configured to adjust an axis of the electron beam 4, and a control device 9 configured to supply a signal representing a control amount to the adjusting element 13 for control.

Abstract: Foreign substances present in a sample chamber are attached to or drawn close to an objective lens and an electrode disposed close to the objective lens by applying a higher magnetic field than when normally used to the objective lens and applying a higher electric field than when normally used to the electrode disposed close to the objective lens. A stage is moved such that the center of an optical axis is located directly above a dedicated stand capable of applying voltage, the magnetic field of the objective lens is turned off, and then the potential difference between the electrode disposed close to the objective lens and an electrode disposed close to the sage is periodically maximized and minimized to thereby forcibly drop the foreign substances onto the dedicated stand capable of applying voltage.

Abstract: Foreign substances present in a sample chamber are attached to or drawn close to an objective lens and an electrode disposed close to the objective lens by applying a higher magnetic field than when normally used to the objective lens and applying a higher electric field than when normally used to the electrode disposed close to the objective lens. A stage is moved such that the center of an optical axis is located directly above a dedicated stand capable of applying voltage, the magnetic field of the objective lens is turned off, and then the potential difference between the electrode disposed close to the objective lens and an electrode disposed close to the sage is periodically maximized and minimized to thereby forcibly drop the foreign substances onto the dedicated stand capable of applying voltage.

Abstract: Disclosed is a scanning electron microscope capable of performing speedy focusing by automatically measuring an electrostatic voltage of a surface of a wafer inside a specimen chamber in an accurate, and easy speedy manner, the wafer assuming different electrostatic voltages inside and outside the specimen chamber. The scanning electron microscope that controls optical systems measures an electrostatic voltage of the specimen according to an electrostatic capacitance between the both parts of the divided electrode plate, by dividing an electrode plate into two parts and switching potentials of electrodes obtained by the division with each other, an electrostatic voltage of the specimen based on an electrostatic capacitance between the both parts of the divided electrode plate. The electrode plate is used for applying a retarding voltage and arranged over a specimen.

Abstract: Disclosed is a scanning electron microscope capable of performing speedy focusing by automatically measuring an electrostatic voltage of a surface of a wafer inside a specimen chamber in an accurate, and easy speedy manner, the wafer assuming different electrostatic voltages inside and outside the specimen chamber. The scanning electron microscope that controls optical systems measures an electrostatic voltage of the specimen according to an electrostatic capacitance between the both parts of the divided electrode plate, by dividing an electrode plate into two parts and switching potentials of electrodes obtained by the division with each other, an electrostatic voltage of the specimen based on an electrostatic capacitance between the both parts of the divided electrode plate. The electrode plate is used for applying a retarding voltage and arranged over a specimen.