Patents by Inventor Kazumasa Horita
Kazumasa Horita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240040788Abstract: [PROBLEM] An object of the present invention is to provide a nonvolatile memory device having an excellent information retention characteristic, exhibiting high performance, and achieving practical mass-production, and a manufacturing method therefor. [SOLUTION] A nonvolatile memory device 1 has a laminated structure part including a plurality of Al2O3 layers 4 and a plurality of SiO2 layers 6 formed as two types of insulating layers formed with different compositions and disposed alternately, and an O-M1-O layer 5 of a 0.5 molecular layer to a 2.0 molecular layer, formed by a chemical bond between a metal element M1 and oxygen, and disposed on each joining interface between the insulating layers, the metal element M1 being an element other than elements constituting the insulating layers, and the nonvolatile memory device stores information by modulating an interface dipole induced in the vicinity of the O-M1-O layer 5 by external electrical stimulation.Type: ApplicationFiled: October 15, 2021Publication date: February 1, 2024Inventors: Noriyuki Miyata, Shutaro Asanuma, Kyoko Sumita, Yuusuke Miyaguchi, Kazuya Saito, Takehito Jinbo, Kazumasa Horita, Takeshi Masuda
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Patent number: 11335853Abstract: A method of manufacturing an OTS device of the invention is a method of manufacturing OTS device including a first conductor, an OTS portion made of chalcogenide, and a second conductor which are layered in order and disposed on an insulating substrate. The manufacturing method includes: a step D of forming a resist so as to coat part of an upper surface of the second conductor; a step E of dry etching a region which is not coated with the resist; and a step F of ashing the resist. In the step E, the second conductor, all of the OTS portion, and an upper portion of the first conductor are removed by an etching treatment once in a depth direction of the region.Type: GrantFiled: October 24, 2018Date of Patent: May 17, 2022Assignee: ULVAC, INC.Inventors: Hyung-Woo Ahn, Kazumasa Horita, Takahiko Sawada, Tadashi Yamamoto
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Publication number: 20210336137Abstract: A method of manufacturing an OTS device of the invention is a method of manufacturing OTS device including a first conductor, an OTS portion made of chalcogenide, and a second conductor which are layered in order and disposed on an insulating substrate. The manufacturing method includes: a step D of forming a resist so as to coat part of an upper surface of the second conductor; a step E of dry etching a region which is not coated with the resist; and a step F of ashing the resist. In the step E, the second conductor, all of the OTS portion, and an upper portion of the first conductor are removed by an etching treatment once in a depth direction of the region.Type: ApplicationFiled: October 24, 2018Publication date: October 28, 2021Inventors: Hyung-Woo AHN, Kazumasa HORITA, Takahiko SAWADA, Tadashi YAMAMOTO
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Patent number: 9281477Abstract: To provide a resistance change element which does not require a forming process and enables reduction of power consumption and miniaturization of the element, and to provide a method for producing it. A resistance change element 1 according to an embodiment of the present invention includes a bottom electrode layer 3, a top electrode layer 5 and an oxide semiconductor layer 4. The oxide semiconductor layer 4 has a first metal oxide layer 41 and a second metal oxide layer 42. The first metal oxide layer 41 is formed between the bottom electrode layer 3 and the top electrode layer 5, and in ohmic contact with the bottom electrode layer 3. The second metal oxide layer 42 is formed between the first metal oxide layer 41 and the top electrode layer 5, and in ohmic contact with the top electrode layer 5.Type: GrantFiled: June 17, 2012Date of Patent: March 8, 2016Assignee: ULVAC, INC.Inventors: Yutaka Nishioka, Kazumasa Horita, Natsuki Fukuda, Shin Kikuchi, Koukou Suu
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Patent number: 9269903Abstract: [Object] To provide a method and an apparatus for manufacturing a variable resistance element by which a metal oxide layer having a desired resistivity can be precisely formed. [Solving Means] The method of manufacturing the variable resistance element according to an embodiment of the present invention includes a step of forming a first metal oxide having a first resistivity and a step of forming a second metal oxide having a second resistivity different from the first resistivity. The first metal oxide is formed on a substrate by sputtering, while sputtering a first target made of an oxide of metal, a second target made of the metal with a first power. The second metal oxide layer is formed on the first metal oxide layer by sputtering the second target with a second power different from the first power while sputtering the first target.Type: GrantFiled: June 7, 2012Date of Patent: February 23, 2016Assignee: ULVAC, INC.Inventors: Yutaka Nishioka, Kazumasa Horita, Natsuki Fukuda, Shin Kikuchi, Youhei Ogawa, Koukou Suu
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Patent number: 9005413Abstract: A film formation apparatus includes: a chamber having an inner space in which both a body to be processed and a target are disposed so that the body to be processed and the target are opposed to each other, a first magnetic field generation section generating a magnetic field in the inner space to which the target is exposed; a second magnetic field generation section generating a perpendicular magnetic field so as to allow perpendicular magnetic lines of force thereof to pass between the target the body to be processed; and a third magnetic field generation section disposed at upstream side of the target as seen from the second magnetic field generation section.Type: GrantFiled: July 15, 2010Date of Patent: April 14, 2015Assignee: ULVAC, Inc.Inventors: Shuji Kodaira, Tomoyuki Yoshihama, Koukichi Kamada, Kazumasa Horita, Junichi Hamaguchi, Shigeo Nakanishi, Satoru Toyoda
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Publication number: 20140166966Abstract: To provide a resistance change element which does not require a forming process and enables reduction of power consumption and miniaturization of the element, and to provide a method for producing it. A resistance change element 1 according to an embodiment of the present invention includes a bottom electrode layer 3, a top electrode layer 5 and an oxide semiconductor layer 4. The oxide semiconductor layer 4 has a first metal oxide layer 41 and a second metal oxide layer 42. The first metal oxide layer 41 is formed between the bottom electrode layer 3 and the top electrode layer 5, and in ohmic contact with the bottom electrode layer 3. The second metal oxide layer 42 is formed between the first metal oxide layer 41 and the top electrode layer 5, and in ohmic contact with the top electrode layer 5.Type: ApplicationFiled: June 7, 2012Publication date: June 19, 2014Applicant: ULVAC, INC.Inventors: Yutaka Nishioka, Kazumasa Horita, Natsuki Fukuda, Shin Kikuchi, Koukou Suu
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Publication number: 20140102879Abstract: [Object] To provide a method and an apparatus for manufacturing a variable resistance element by which a metal oxide layer having a desired resistivity can be precisely formed. [Solving Means] The method of manufacturing the variable resistance element according to an embodiment of the present invention includes a step of forming a first metal oxide having a first resistivity and a step of forming a second metal oxide having a second resistivity different from the first resistivity. The first metal oxide is formed on a substrate by sputtering, while sputtering a first target made of an oxide of metal, a second target made of the metal with a first power. The second metal oxide layer is formed on the first metal oxide layer by sputtering the second target with a second power different from the first power while sputtering the first target.Type: ApplicationFiled: June 7, 2012Publication date: April 17, 2014Applicant: ULVAC, INC.Inventors: Yutaka Nishioka, Kazumasa Horita, Natsuki Fukuda, Shin Kikuchi, Youhei Ogawa, Koukou Suu
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Publication number: 20140048413Abstract: There is provided a film forming apparatus for forming a coating film on a surface of an object to be processed by using a sputtering method, the film forming apparatus including: a chamber for accommodating the object and a target serving as a base material for the coating film that are placed so as to face each other; an exhaust unit for reducing the pressure inside the chamber; a magnetic field generating unit for generating a magnetic field in front of the sputtering surface of the target; a direct current power supply for applying a negative direct current voltage to the target; a gas introducing unit for introducing a sputtering gas into the chamber; and a unit for preventing the entering of sputtered particles onto the object until the plasma generated between the target and the object reaches a stable state.Type: ApplicationFiled: October 23, 2013Publication date: February 20, 2014Applicant: ULVAC, INC.Inventors: Shuji KODAIRA, Tomoyuki YOSHIHAMA, Koukichi KAMADA, Kazumasa HORITA, Junichi HAMAGUCHI, Shigeo NAKANISHI, Satoru TOYODA
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Publication number: 20120118725Abstract: A film forming method of forming a coating on a surface of an object to be processed includes disposing a target forming a base material of the coating and the object to be processed in a chamber so as to face each other, and generating a magnetic field through which a vertical line of magnetic force locally passes from a sputter surface of the target toward a surface to be film formed of the object to be processed at predetermined intervals; generating plasma in a space between the target and the object to be processed by introducing a sputter gas into the chamber, controlling a gas pressure in the chamber to a range of 0.3 Pa to 10.0 Pa, and applying a negative DC voltage to the target; and inducing and depositing the sputter particles on the object to be processed and forming the coating, while controlling flying direction of the sputter particles generated by sputtering the target.Type: ApplicationFiled: May 20, 2010Publication date: May 17, 2012Applicant: ULVAC, INC.Inventors: Naoki Morimoto, Junichi Hamaguchi, Kazumasa Horita, Naoki Takeda
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Publication number: 20120118732Abstract: A film formation apparatus includes: a chamber having a side wall and an inner space in which both a body to be processed and a target are disposed a first magnetic field generation section generating a magnetic field in the inner space a second magnetic field generation section disposed at a position close to the target, the second magnetic field generation section generating a magnetic field so as to allow perpendicular magnetic lines of force thereof to pass through a position adjacent to the target; and a third magnetic field generation section disposed at a position close to the body to be processed, the third magnetic field generation section generating a magnetic field so as to induce the magnetic lines of force to the side wall of the chamber.Type: ApplicationFiled: July 15, 2010Publication date: May 17, 2012Applicant: ULVAC, INC.Inventors: Shuji Kodaira, Tomoyuki Yoshihama, Koukichi Kamada, Kazumasa Horita, Junichi Hamaguchi, Shigeo Nakanishi, Satoru Toyoda
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Publication number: 20120121818Abstract: A coating surface processing method includes forming a coating on the entire surface of a base body that has fine holes or fine grooves formed on the to-be-filmed surface, including the inner wall surfaces and the inner bottom surfaces of the holes or the grooves, and flattening the coating formed on the inner wall surfaces of the holes or the grooves by carrying out a plasma processing on the surface of the coating.Type: ApplicationFiled: July 21, 2010Publication date: May 17, 2012Applicant: ULVAC, INC.Inventors: Shuji Kodaira, Tomoyuki Yoshihama, Koukichi Kamada, Kazumasa Horita, Junichi Hamaguchi, Shigeo Nakanishi, Satoru Toyoda
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Publication number: 20120111722Abstract: There is provided a film forming apparatus for forming a coating film on a surface of an object to be processed by using a sputtering method, the film forming apparatus including: a chamber for accommodating the object and a target serving as a base material for the coating film that are placed so as to face each other; an exhaust unit for reducing the pressure inside the chamber; a magnetic field generating unit for generating a magnetic field in front of the sputtering surface of the target; a direct current power supply for applying a negative direct current voltage to the target; a gas introducing unit for introducing a sputtering gas into the chamber; and a unit for preventing the entering of sputtered particles onto the object until the plasma generated between the target and the object reaches a stable state.Type: ApplicationFiled: July 15, 2010Publication date: May 10, 2012Applicant: ULVAC, INC.Inventors: Shuji Kodaira, Tomoyuki Yoshihama, Koukichi Kamada, Kazumasa Horita, Junichi Hamaguchi, Shigeo Nakanishi, Satoru Toyoda
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Publication number: 20120103801Abstract: A film formation apparatus includes: a chamber having an inner space in which both a body to be processed and a target are disposed so that the body to be processed and the target are opposed to each other, a first magnetic field generation section generating a magnetic field in the inner space to which the target is exposed; a second magnetic field generation section generating a perpendicular magnetic field so as to allow perpendicular magnetic lines of force thereof to pass between the target the body to be processed; and a third magnetic field generation section disposed at upstream side of the target as seen from the second magnetic field generation section.Type: ApplicationFiled: July 15, 2010Publication date: May 3, 2012Applicant: ULVAC, INC.Inventors: Shuji Kodaira, Tomoyuki Yoshihama, Koukichi Kamada, Kazumasa Horita, Junichi Hamaguchi, Shigeo Nakanishi, Satoru Toyoda
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Publication number: 20120097527Abstract: A film formation apparatus includes: a chamber in which both a body to be processed and a target are disposed; a first magnetic field generation section generating a magnetic field; and a second magnetic field generation section including a first generation portion to which a current defined as “Iu” is applied and a second generation portion to which a current defined as “Id” is applied, the first generation portion being disposed at a position close to the target, the second generation portion being disposed at a position close to the body to be processed, the second magnetic field generation section applying the currents to the first generation portion and the second generation portion so as to satisfy the relational expression Id<Iu, the second magnetic field generation section allowing perpendicular magnetic lines to pass between the target and the body to be processed.Type: ApplicationFiled: July 15, 2010Publication date: April 26, 2012Applicant: ULVAC, INC.Inventors: Shuji Kodaira, Tomoyuki Yoshihama, Koukichi Kamada, Kazumasa Horita, Junichi Hamaguchi, Shigeo Nakanishi, Satoru Toyoda