Patents by Inventor Kazumasa Morishita
Kazumasa Morishita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8553198Abstract: In view of realizing a lithographic process which makes it possible to estimate and correct flare with an extremely high accuracy, and causes only an extremely small dimensional variation in width, over the entire portion not only of a single shot region, but also of a single chip region, a mask pattern correction device of the present invention has a numerical aperture calculation unit calculating, for every single shot region, flare energy for a mask pattern corresponding to a transferred pattern, based on an exposure layout of a plurality of shot regions, or more specifically, while considering flare from a plurality of shot regions located around every single shot region.Type: GrantFiled: June 4, 2012Date of Patent: October 8, 2013Assignee: Fujitsu Semiconductor LimitedInventors: Teruyoshi Yao, Satoru Asai, Morimi Osawa, Hiromi Hoshino, Kouzou Ogino, Kazumasa Morishita
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Patent number: 8316328Abstract: A method for manufacturing a photomask based on design data includes the steps of forming a figure element group including a figure element in a layout pattern on the photomask and a figure element affecting the figure element due to the optical proximity effect, adding identical identification data to a data group indicating an identical figure element group, estimating an influence of the optical proximity effect on the figure element group, generating correction data indicating a corrected figure element in which the influence of the optical proximity effect is compensated for at the time of exposure, creating figure data by associating data having the identical identification data with correction data having the identical identification data, and forming a mask pattern on the photomask using figure data. Thus, the computation time for correction of the layout can be reduced, thereby reducing the production time of the photomask.Type: GrantFiled: April 23, 2012Date of Patent: November 20, 2012Assignee: Fujitsu Semiconductor LimitedInventors: Hiroki Futatsuya, Kazumasa Morishita
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Publication number: 20120236279Abstract: In view of realizing a lithographic process which makes it possible to estimate and correct flare with an extremely high accuracy, and causes only an extremely small dimensional variation in width, over the entire portion not only of a single shot region, but also of a single chip region, a mask pattern correction device of the present invention has a numerical aperture calculation unit calculating, for every single shot region, flare energy for a mask pattern corresponding to a transferred pattern, based on an exposure layout of a plurality of shot regions, or more specifically, while considering flare from a plurality of shot regions located around every single shot region.Type: ApplicationFiled: June 4, 2012Publication date: September 20, 2012Applicant: FUJITSU SEMICONDUCTOR LTDInventors: Teruyoshi YAO, Satoru Asai, Morimi Osawa, Hiromi Hoshino, Kouzou Ogino, Kazumasa Morishita
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Publication number: 20120206700Abstract: A method for manufacturing a photomask based on design data includes the steps of forming a figure element group including a figure element in a layout pattern on the photomask and a figure element affecting the figure element due to the optical proximity effect, adding identical identification data to a data group indicating an identical figure element group, estimating an influence of the optical proximity effect on the figure element group, generating correction data indicating a corrected figure element in which the influence of the optical proximity effect is compensated for at the time of exposure, creating figure data by associating data having the identical identification data with correction data having the identical identification data, and forming a mask pattern on the photomask using figure data. Thus, the computation time for correction of the layout can be reduced, thereby reducing the production time of the photomask.Type: ApplicationFiled: April 23, 2012Publication date: August 16, 2012Applicant: FUJITSU SEMICONDUCTOR LIMITEDInventors: Hiroki Futatsuya, Kazumasa Morishita
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Patent number: 8227153Abstract: In view of realizing a lithographic process which makes it possible to estimate and correct flare with an extremely high accuracy, and causes only an extremely small dimensional variation in width, over the entire portion not only of a single shot region, but also of a single chip region, a mask pattern correction device of the present invention has a numerical aperture calculation unit calculating, for every single shot region, flare energy for a mask pattern corresponding to a transferred pattern, based on an exposure layout of a plurality of shot regions, or more specifically, while considering flare from a plurality of shot regions located around every single shot region.Type: GrantFiled: April 26, 2010Date of Patent: July 24, 2012Assignee: Fujitsu Semiconductor LimitedInventors: Teruyoshi Yao, Satoru Asai, Morimi Osawa, Hiromi Hoshino, Kouzou Ogino, Kazumasa Morishita
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Patent number: 8185848Abstract: A method for manufacturing a photomask based on design data includes the steps of forming a figure element group including a figure element in a layout pattern on the photomask and a figure element affecting the figure element due to the optical proximity effect, adding identical identification data to a data group indicating an identical figure element group, estimating an influence of the optical proximity effect on the figure element group, generating correction data indicating a corrected figure element in which the influence of the optical proximity effect is compensated for at the time of exposure, creating figure data by associating data having the identical identification data with correction data having the identical identification data, and forming a mask pattern on the photomask using figure data. Thus, the computation time for correction of the layout can be reduced, thereby reducing the production time of the photomask.Type: GrantFiled: September 13, 2011Date of Patent: May 22, 2012Assignee: Fujitsu Semiconductor LimitedInventors: Hiroki Futatsuya, Kazumasa Morishita
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Publication number: 20120005636Abstract: A method for manufacturing a photomask based on design data includes the steps of forming a figure element group including a figure element in a layout pattern on the photomask and a figure element affecting the figure element due to the optical proximity effect, adding identical identification data to a data group indicating an identical figure element group, estimating an influence of the optical proximity effect on the figure element group, generating correction data indicating a corrected figure element in which the influence of the optical proximity effect is compensated for at the time of exposure, creating figure data by associating data having the identical identification data with correction data having the identical identification data, and forming a mask pattern on the photomask using figure data. Thus, the computation time for correction of the layout can be reduced, thereby reducing the production time of the photomask.Type: ApplicationFiled: September 13, 2011Publication date: January 5, 2012Applicant: FUJITSU SEMICONDUCTOR LIMITEDInventors: Hiroki Futatsuya, Kazumasa Morishita
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Patent number: 8037427Abstract: A method for manufacturing a photomask based on design data includes the steps of forming a figure element group including a figure element in a layout pattern on the photomask and a figure element affecting the figure element due to the optical proximity effect, adding identical identification data to a data group indicating an identical figure element group, estimating an influence of the optical proximity effect on the figure element group, generating correction data indicating a corrected figure element in which the influence of the optical proximity effect is compensated for at the time of exposure, creating figure data by associating data having the identical identification data with correction data having the identical identification data, and forming a mask pattern on the photomask using figure data. Thus, the computation time for correction of the layout can be reduced, thereby reducing the production time of the photomask.Type: GrantFiled: March 7, 2011Date of Patent: October 11, 2011Assignee: Fujitsu Semiconductor LimitedInventors: Hiroki Futatsuya, Kazumasa Morishita
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Publication number: 20110159417Abstract: A method for manufacturing a photomask based on design data includes the steps of forming a figure element group including a figure element in a layout pattern on the photomask and a figure element affecting the figure element due to the optical proximity effect, adding identical identification data to a data group indicating an identical figure element group, estimating an influence of the optical proximity effect on the figure element group, generating correction data indicating a corrected figure element in which the influence of the optical proximity effect is compensated for at the time of exposure, creating figure data by associating data having the identical identification data with correction data having the identical identification data, and forming a mask pattern on the photomask using figure data. Thus, the computation time for correction of the layout can be reduced, thereby reducing the production time of the photomask.Type: ApplicationFiled: March 7, 2011Publication date: June 30, 2011Applicant: FUJITSU SEMICONDUCTOR LIMITEDInventors: Hiroki Futatsuya, Kazumasa Morishita
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Patent number: 7926003Abstract: A method for manufacturing a photomask based on design data includes the steps of forming a figure element group including a figure element in a layout pattern on the photomask and a figure element affecting the figure element due to the optical proximity effect, adding identical identification data to a data group indicating an identical figure element group, estimating an influence of the optical proximity effect on the figure element group, generating correction data indicating a corrected figure element in which the influence of the optical proximity effect is compensated for at the time of exposure, creating figure data by associating data having the identical identification data with correction data having the identical identification data, and forming a mask pattern on the photomask using figure data. Thus, the computation time for correction of the layout can be reduced, thereby reducing the production time of the photomask.Type: GrantFiled: June 9, 2009Date of Patent: April 12, 2011Assignee: Fujitsu Semiconductor LimitedInventors: Hiroki Futatsuya, Kazumasa Morishita
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Publication number: 20100209834Abstract: In view of realizing a lithographic process which makes it possible to estimate and correct flare with an extremely high accuracy, and causes only an extremely small dimensional variation in width, over the entire portion not only of a single shot region, but also of a single chip region, a mask pattern correction device of the present invention has a numerical aperture calculation unit calculating, for every single shot region, flare energy for a mask pattern corresponding to a transferred pattern, based on an exposure layout of a plurality of shot regions, or more specifically, while considering flare from a plurality of shot regions located around every single shot region.Type: ApplicationFiled: April 26, 2010Publication date: August 19, 2010Applicant: FUJITSU SEMICONDUCTOR LTD.Inventors: Teruyoshi YAO, Satoru ASAI, Morimi OSAWA, Hiromi HOSHINO, Kouzou OGINO, Kazumasa MORISHITA
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Patent number: 7732107Abstract: In view of realizing a lithographic process which makes it possible to estimate and correct flare with an extremely high accuracy, and causes only an extremely small dimensional variation in width, over the entire portion not only of a single shot region, but also of a single chip region, a mask pattern correction device of the present invention has a numerical aperture calculation unit calculating, for every single shot region, flare energy for a mask pattern corresponding to a transferred pattern, based on an exposure layout of a plurality of shot regions, or more specifically, while considering flare from a plurality of shot regions located around every single shot region.Type: GrantFiled: November 24, 2004Date of Patent: June 8, 2010Assignee: Fujitsu Semiconductor LimitedInventors: Teruyoshi Yao, Satoru Asai, Morimi Osawa, Hiromi Hoshino, Kouzou Ogino, Kazumasa Morishita
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Publication number: 20090293039Abstract: A method for manufacturing a photomask based on design data includes the steps of forming a figure element group including a figure element in a layout pattern on the photomask and a figure element affecting the figure element due to the optical proximity effect, adding identical identification data to a data group indicating an identical figure element group, estimating an influence of the optical proximity effect on the figure element group, generating correction data indicating a corrected figure element in which the influence of the optical proximity effect is compensated for at the time of exposure, creating figure data by associating data having the identical identification data with correction data having the identical identification data, and forming a mask pattern on the photomask using figure data. Thus, the computation time for correction of the layout can be reduced, thereby reducing the production time of the photomask.Type: ApplicationFiled: June 9, 2009Publication date: November 26, 2009Applicant: FUJITSU MICROELECTRONICS LIMITEDInventors: Hiroki FUTATSUYA, Kazumasa MORISHITA
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Patent number: 7562334Abstract: A method for manufacturing a photomask based on design data includes the steps of forming a figure element group including a figure element in a layout pattern on the photomask and a figure element affecting the figure element due to the optical proximity effect, adding identical identification data to a data group indicating an identical figure element group, estimating an influence of the optical proximity effect on the figure element group, generating correction data indicating a corrected figure element in which the influence of the optical proximity effect is compensated for at the time of exposure, creating figure data by associating data having the identical identification data with correction data having the identical identification data, and forming a mask pattern on the photomask using figure data. Thus, the computation time for correction of the layout can be reduced, thereby reducing the production time of the photomask.Type: GrantFiled: August 24, 2005Date of Patent: July 14, 2009Assignee: Fujitsu Microelectronics LimitedInventors: Hiroki Futatsuya, Kazumasa Morishita
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Method for manufacturing photomask and method for manufacturing semiconductor device using photomask
Publication number: 20060222964Abstract: A method for manufacturing a photomask based on design data includes the steps of forming a figure element group including a figure element in a layout pattern on the photomask and a figure element affecting the figure element due to the optical proximity effect, adding identical identification data to a data group indicating an identical figure element group, estimating an influence of the optical proximity effect on the figure element group, generating correction data indicating a corrected figure element in which the influence of the optical proximity effect is compensated for at the time of exposure, creating figure data by associating data having the identical identification data with correction data having the identical identification data, and forming a mask pattern on the photomask using figure data. Thus, the computation time for correction of the layout can be reduced, thereby reducing the production time of the photomask.Type: ApplicationFiled: August 24, 2005Publication date: October 5, 2006Applicant: FUJITSU LIMITEDInventors: Hiroki Futatsuya, Kazumasa Morishita -
Publication number: 20060018529Abstract: In view of realizing a lithographic process which makes it possible to estimate and correct flare with an extremely high accuracy, and causes only an extremely small dimensional variation in width, over the entire portion not only of a single shot region, but also of a single chip region, a mask pattern correction device of the present invention has a numerical aperture calculation unit calculating, for every -single shot region, flare energy for a mask pattern corresponding to a transferred pattern, based on an exposure layout of a plurality of shot regions, or more specifically, while considering flare from a plurality of shot regions located around every single shot region.Type: ApplicationFiled: November 24, 2004Publication date: January 26, 2006Applicant: FUJITSU LIMITEDInventors: Teruyoshi Yao, Satoru Asai, Morimi Osawa, Hiromi Hoshino, Kouzou Ogino, Kazumasa Morishita
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Patent number: 5046012Abstract: A pattern data processing method processes hierarchical pattern data which has a hierarchical structure and describes in each level thereof one or a plurality of internal cells constituting one or a plurality of logic blocks of a semiconductor integrated circuit device which is to be produced. The pattern processing method comprises the steps of defining a frame at a boundary between a level i of the hierarchical structure and a level i+1 which is higher than the level i, cutting a first portion of a pattern which protrudes out of the frame form the level i to the level i+1 and defining the cut, first portion as a pattern of the level i+1, cutting a second portion of a pattern which protrudes out of the frame from the level i+1 to the level i and deleting the cut, second portion, and repeating the steps of cutting the first and second portions for a predetermined number of levels for increasing values of i, where i=1, 2, . . .Type: GrantFiled: June 15, 1989Date of Patent: September 3, 1991Assignees: Fujitsu Limited, Fujitsu Vlsi LimitedInventors: Kazumasa Morishita, Yoshitada Aihara, Yoshihisa Komura, Masaaki Miyajima, Minoru Suzuki