Abstract: An electronic component includes a chip that has a main surface, an insulating layer that is laminated at a thickness exceeding 2200 nm on the main surface and has a first end on the chip side and a second end on an opposite side to the chip, and a resistive film that is arranged inside the insulating layer such as not to be positioned within a thickness range of less than 2200 nm on a basis of the first end and includes an alloy crystal constituted of a metal element and a nonmetal element.

Abstract: A semiconductor device has a resistor area and wiring area selectively disposed on a semiconductor substrate. In this semiconductor device, a second interlayer insulating film is formed above the semiconductor substrate, and a thin-film resistor is disposed on the second interlayer insulating film in the resistor area. Vias that contact the thin-film resistor from below are formed in the second interlayer insulating film. A wiring line is disposed on the second interlayer insulating film in the wiring area. A dummy wiring line that covers the thin-film resistor from above is disposed in a third wiring layer that is in the same layer as the wiring line, and an insulating film is interposed between the thin-film resistor and the dummy wiring line.

Abstract: The invention enhances a cooling effect on a press die for hot press. A lower die includes a first base, a second base mounted on the first base and having an opening in the center, a support table provided in the opening of the second base, and a die portion detachably mounted on the support table and including die pieces. The die portion is divided in die pieces disposed adjoining each other, and cold water pipes are provided in the die pieces respectively. The cold water pipes are bent in a U shape and inserted in the die pieces respectively, and extended downward from the lower ends of the die pieces respectively. The cold water pipes have cooling water injection ends and cooling water ejection ends in a space between the first base and the support table.

Abstract: A semiconductor device has a resistor area and wiring area selectively disposed on a semiconductor substrate. In this semiconductor device, a second interlayer insulating film is formed above the semiconductor substrate, and a thin-film resistor is disposed on the second interlayer insulating film in the resistor area. Vias that contact the thin-film resistor from below are formed in the second interlayer insulating film. A wiring line is disposed on the second interlayer insulating film in the wiring area. A dummy wiring line that covers the thin-film resistor from above is disposed in a third wiring layer that is in the same layer as the wiring line, and an insulating film is interposed between the thin-film resistor and the dummy wiring line.

Abstract: A semiconductor device has a resistor area and wiring area selectively disposed on a semiconductor substrate. In this semiconductor device, a second interlayer insulating film is formed above the semiconductor substrate, and a thin-film resistor is disposed on the second interlayer insulating film in the resistor area. Vias that contact the thin-film resistor from below are formed in the second interlayer insulating film. A wiring line is disposed on the second interlayer insulating film in the wiring area. A dummy wiring line that covers the thin-film resistor from above is disposed in a third wiring layer that is in the same layer as the wiring line, and an insulating film is interposed between the thin-film resistor and the dummy wiring line.

Abstract: A semiconductor device has a resistor area and wiring area selectively disposed on a semiconductor substrate. In this semiconductor device, a second interlayer insulating film is formed above the semiconductor substrate, and a thin-film resistor is disposed on the second interlayer insulating film in the resistor area. Vias that contact the thin-film resistor from below are formed in the second interlayer insulating film. A wiring line is disposed on the second interlayer insulating film in the wiring area. A dummy wiring line that covers the thin-film resistor from above is disposed in a third wiring layer that is in the same layer as the wiring line, and an insulating film is interposed between the thin-film resistor and the dummy wiring line.

Abstract: A semiconductor device has a resistor area and wiring area selectively disposed on a semiconductor substrate. In this semiconductor device, a second interlayer insulating film is formed above the semiconductor substrate, and a thin-film resistor is disposed on the second interlayer insulating film in the resistor area. Vias that contact the thin-film resistor from below are formed in the second interlayer insulating film. A wiring line is disposed on the second interlayer insulating film in the wiring area. A dummy wiring line that covers the thin-film resistor from above is disposed in a third wiring layer that is in the same layer as the wiring line, and an insulating film is interposed between the thin-film resistor and the dummy wiring line.

Abstract: A semiconductor device has a resistor area and wiring area selectively disposed on a semiconductor substrate. In this semiconductor device, a second interlayer insulating film is formed above the semiconductor substrate, and a thin-film resistor is disposed on the second interlayer insulating film in the resistor area. Vias that contact the thin-film resistor from below are formed in the second interlayer insulating film. A wiring line is disposed on the second interlayer insulating film in the wiring area. A dummy wiring line that covers the thin-film resistor from above is disposed in a third wiring layer that is in the same layer as the wiring line, and an insulating film is interposed between the thin-film resistor and the dummy wiring line.

Abstract: The invention enhances a cooling effect on a press die for hot press. A lower die includes a first base, a second base mounted on the first base and having an opening in the center, a support table provided in the opening of the second base, and a die portion detachably mounted on the support table and including die pieces. The die portion is divided in die pieces disposed adjoining each other, and cold water pipes are provided in the die pieces respectively. The cold water pipes are bent in a U shape and inserted in the die pieces respectively, and extended downward from the lower ends of the die pieces respectively. The cold water pipes have cooling water injection ends and cooling water ejection ends in a space between the first base and the support table.

Abstract: An object of the present invention is to provide a cladding material, which has high joining strength and excellent productivity, and a manufacturing method therefor; in order to attain this object, the present invention provides a cladding material comprising: a first material to be joined which is made of aluminum or an aluminum alloy; a second material to be joined which is made of a single metal or an alloy and which is join the first material to be joined; and an intermediate layer which is provided between the first and second materials to be joined.

Abstract: An object of the present invention is to provide a cladding material, which has high joining strength and excellent productivity, and a manufacturing method therefor; in order to attain this object, the present invention provides a cladding material comprising: a first material to be joined which is made of aluminum or an aluminum alloy; a second material to be joined which is made of a single metal or an alloy and which is join the first material to be joined; and an intermediate layer which is provided between the first and second materials to be joined.