Abstract: Provided is a vacuum processing method capable of preventing particles from adhering to a wafer due to a titanium (Ti)-based reaction product. The vacuum processing method is applicable to a plasma processing apparatus including: a sample stage disposed in a processing chamber inside a vacuum container, on which a wafer having a titanium (Ti)-containing film is placed; a coil supplied with a radio frequency power for forming plasma in the processing chamber; and a heating device that emits an electromagnetic wave for heating the wafer placed on an upper surface of the sample stage. The vacuum processing method includes a step of etching the titanium (Ti)-containing film, and a step of cleaning an inside of the processing chamber by using a mixed gas of nitrogen trifluoride (NF3) gas, argon gas, and a chlorine gas.

Abstract: Provided is a vacuum processing method capable of preventing particles from adhering to a wafer due to a titanium (Ti)-based reaction product. The vacuum processing method is applicable to a plasma processing apparatus including: a sample stage disposed in a processing chamber inside a vacuum container, on which a wafer having a titanium (Ti)-containing film is placed; a coil supplied with a radio frequency power for forming plasma in the processing chamber; and a heating device that emits an electromagnetic wave for heating the wafer placed on an upper surface of the sample stage. The vacuum processing method includes a step of etching the titanium (Ti)-containing film, and a step of cleaning an inside of the processing chamber by using a mixed gas of nitrogen trifluoride (NF3) gas, argon gas, and a chlorine gas.