Abstract: An optical device includes an optical coupler that inputs an optical signal received from a light source, a semiconductor optical amplifier that amplifies the optical signal received from the optical coupler, and a light receiving element that receives spontaneous emission light received from the semiconductor optical amplifier. The optical coupler includes a first input port to which the optical signal received from the light source is input, a second input port that is connected to an input stage of the light receiving element and that is different from the first input, and an output port that is connected to an input stage of the semiconductor optical amplifier, and that outputs optical signal received from the first input port to the semiconductor optical amplifier. The light receiving element receives, via the output port and the second input port, spontaneous emission light received from the semiconductor optical amplifier.

Abstract: A wavelength filter includes a first filter circuit and a second filter circuit. The first filter circuit that has a passband that is obtained from a vernier effect by connecting, in series, a plurality of ring resonators each having a different transmission wavelength interval and that is within a gain band of an optical amplifier, and that passes, from the gain band, light at a selected wavelength and light that has a wavelength in a recursive mode and that is produced on a short wavelength side or a long wavelength side of the selected wavelength. The second filter circuit is connected to the first filter circuit in series and suppresses the light at the wavelength in the recursive mode from the light passing through the first filter circuit.

Abstract: An integrated photonic device having an array of two or more semiconductor optical amplifiers includes a first semiconductor optical amplifier, which has a first gain region and a second gain region connected by a first connecting waveguide, and a second semiconductor optical amplifier, which is provided in parallel with the first semiconductor optical amplifier and has a third gain region and a fourth gain region connected by a second connecting waveguide. The first gain region and the second gain region are provided on an outer side of the third gain region and the fourth gain region. The first connecting waveguide is configured to connect the first gain region and the second gain region on the outer side of the second connecting waveguide.

Abstract: An optical amplifier includes an optical amplifier chip that includes a pair of semiconductor optical amplifiers (SOAs), a U-shaped waveguide connecting the pair of SOAS, and two electrodes that respectively correspond to the pair of SOAS and are separated from each other, and a base substrate that includes a common metal wiring connecting the two electrodes, and on which the optical amplifier chip is mounted.

Abstract: An optical device includes an optical coupler that performs branching of the input light and outputs a first-type branched light and a second-type branched light; a polarization converter that changes the direction of polarization of the second-type branched light output from the optical coupler; and a polarization synthesizer that outputs a polarization multiplexed light by synthesizing the first-type branched light, which is output from the optical coupler, and the second-type branched light, which has the direction of polarization changed by the polarization converter. The optical coupler has the wavelength characteristic that cancels out the wavelength characteristic of the polarization synthesizer regarding the second-type branched light included in the polarization multiplexed light.

Abstract: A wavelength locker includes a splitter configured to split a portion of light that is output from a light source into a first monitoring light and a second monitoring light; a first periodic filter configured to receive the first monitoring light; a second periodic filter configured to receive the second monitoring light; a first optical receiver configured to monitor an intensity of light that has passed through the first periodic filter; and a second optical receiver configured to monitor an intensity of light that has passed through the second periodic filter, wherein the first periodic filter and the second periodic filter each has a wavelength characteristic in which an intensity of transmitted light changes periodically with respect to a wavelength, and the wavelength characteristic of the first periodic filter and the wavelength characteristic of the second periodic filter shift in opposite wavelength directions when temperature changes.

Abstract: An optical device includes an optical coupler that performs branching of the input light and outputs a first-type branched light and a second-type branched light; a polarization converter that changes the direction of polarization of the second-type branched light output from the optical coupler; and a polarization synthesizer that outputs a polarization multiplexed light by synthesizing the first-type branched light, which is output from the optical coupler, and the second-type branched light, which has the direction of polarization changed by the polarization converter. The optical coupler has the wavelength characteristic that cancels out the wavelength characteristic of the polarization synthesizer regarding the second-type branched light included in the polarization multiplexed light.

Abstract: A apparatus includes a tunable laser configured to include a tunable filter and a mirror; a first optical splitter provided between the tunable filter and the mirror, the first optical splitter including a first port and a second port on a tunable filter side and a third port and a fourth port on a mirror side, in which the tunable filter is coupled to the first port and the mirror is coupled to the third port, respectively; a first optical waveguide coupled to the second port; a second optical waveguide coupled to the fourth port; and an optical coupler with which the first optical waveguide and the second optical waveguide are combined.

Abstract: A wavelength locker includes a splitter configured to split a portion of light that is output from a light source into a first monitoring light and a second monitoring light; a first periodic filter configured to receive the first monitoring light; a second periodic filter configured to receive the second monitoring light; a first optical receiver configured to monitor an intensity of light that has passed through the first periodic filter; and a second optical receiver configured to monitor an intensity of light that has passed through the second periodic filter, wherein the first periodic filter and the second periodic filter each has a wavelength characteristic in which an intensity of transmitted light changes periodically with respect to a wavelength, and the wavelength characteristic of the first periodic filter and the wavelength characteristic of the second periodic filter shift in opposite wavelength directions when temperature changes.

Abstract: A apparatus includes a tunable laser configured to include a tunable filter and a mirror; a first optical splitter provided between the tunable filter and the mirror, the first optical splitter including a first port and a second port on a tunable filter side and a third port and a fourth port on a mirror side, in which the tunable filter is coupled to the first port and the mirror is coupled to the third port, respectively; a first optical waveguide coupled to the second port; a second optical waveguide coupled to the fourth port; and an optical coupler with which the first optical waveguide and the second optical waveguide are combined.

Abstract: The present invention relates to an optical semiconductor integrated element and manufacturing method for same solves difficulty in element manufacture, and reduces optical transmission loss. The present invention is provided with a stripe-shaped waveguide configured from a multilayer structure wherein at least a first conductivity-type lower cladding layer, a waveguide core layer, and an upper cladding layer are layered, and the upper cladding layer is formed using a second conductivity-type upper cladding layer, and an i-type upper cladding layer, which has a bent portion by being shifted in the perpendicular direction with respect to the main extending direction of the waveguide.

Abstract: A laser includes first through fourth gain media, first through fifth wavelength selective filters, and first through fourth wavelength selective mirrors. The first through fourth gain media emit laser beams of different wavelengths. Each of the first through fifth wavelength selective filters includes first through fourth input/output ports. The fifth wavelength selective filter selects light of periodic wavelengths. The first through fourth wavelength selective filters have their respective first input/output ports connected to the first through fourth gain media, respectively, have their respective fourth input/output ports connected to the first through fourth wavelength selective mirrors, respectively, and have their respective second input/output ports connected to the first through fourth input/output ports, respectively, of the fifth wavelength selective filter.

Abstract: A semiconductor laser light source includes a semiconductor substrate formed of a first conductivity type semiconductor material, a lower cladding layer formed of the first conductivity type semiconductor material on the semiconductor substrate, a waveguide layer on the lower cladding layer, and an upper cladding layer formed of a second conductivity type semiconductor material on the waveguide layer. The waveguide layer includes a core area and rib areas thinner than the core area on either side of the core area. The core area has a quantum dot active layer, and the rib areas have no quantum dot layer. The waveguide layer forms a laser part having the core area with a constant width and a spot size converter having the core area with a taper width from a side adjacent to the laser part toward an end of the spot size converter.

Abstract: A tunable laser includes a semiconductor optical amplifier, a waveguide wavelength-tunable filter that forms the tunable laser with the semiconductor optical amplifier, an optical splitting mechanism set on a coupling optical waveguide that couples the wavelength-tunable filter and the semiconductor optical amplifier, a first optical splitter of a waveguide type that splits at least part of a light beam split by the optical splitting mechanism into two light beams, a first optical waveguide coupled to one output end of the first optical splitter, a second optical waveguide that is coupled to another output end of the first optical splitter and includes a delay waveguide, a 90° hybrid waveguide that includes two input ports to which an output light beam from the first optical waveguide and an output light beam from the second optical waveguide are input and four output ports that output four output light beams.

Abstract: A laser apparatus includes first and second gain media; first, second, and third wavelength selection filters; and first and second mirrors. The wavelengths of first and second laser light emitted from end surfaces of the first and second gain media, respectively, are different from each other. The third wavelength selection filter is a wavelength selection filter to select light having wavelengths that cyclically exist in the light, as light to be selected. The other end surfaces of the first and second gain media are connected with the first input/output ports of the first and second wavelength selection filters, respectively. The fourth input/output ports of the first and second gain media are connected with the first and second mirrors, respectively. The first and second input/output ports of the third wavelength selection filter are connected with the second input/output ports of the first and second wavelength selection filters, respectively.

Abstract: The present invention relates to an optical semiconductor integrated element and manufacturing method for same solves difficulty in element manufacture, and reduces optical transmission loss. The present invention is provided with a stripe-shaped waveguide configured from a multilayer structure wherein at least a first conductivity-type lower cladding layer, a waveguide core layer, and an upper cladding layer are layered, and the upper cladding layer is formed using a second conductivity-type upper cladding layer, and an i-type upper cladding layer, which has a bent portion by being shifted in the perpendicular direction with respect to the main extending direction of the waveguide.

Abstract: A tunable laser source includes a mirror, a tunable filter, and a semiconductor optical amplifier integrated device including first, second, and third semiconductor optical amplifiers between a first end face facing toward the tunable filter and a second end face facing away from the first end face. The first amplifier is closer to the first end face than the second and third amplifiers. The semiconductor optical amplifier integrated device further includes a partially reflecting mirror and an optical divider that are disposed between the first amplifier and the second and third amplifiers. The partially reflecting mirror is closer to the first amplifier than the optical divider. The optical divider includes first and second branches connected to the second and third semiconductor optical amplifiers, respectively. The tunable filter and the first amplifier are disposed in an optical path between the partially reflecting mirror and the mirror that form a laser resonator.

Abstract: A tunable laser includes: a wavelength filter that includes a first ring resonator and a second ring resonator each of which is formed by a waveguide including a silicon waveguide core, and each of which is capable of shifting each of resonance wavelengths that exit periodically and whose intervals are different from each other; and an integrated device that is optically coupled to the wavelength filter, and in which a first semiconductor optical amplifier and a reflector are provided in sequence from a side of the wavelength filter, wherein the resonance wavelengths of the first ring resonator and the second ring resonator are overlapped with each other at one wavelength, and the resonance wavelengths are overlapped with each other also at a plurality of wavelengths other than the one wavelength.

Abstract: The present invention relates to an optical semiconductor integrated element and manufacturing method for same solves difficulty in element manufacture, and reduces optical transmission loss. The present invention is provided with a stripe-shaped waveguide configured from a multilayer structure wherein at least a first conductivity-type lower cladding layer, a waveguide core layer, and an upper cladding layer are layered, and the upper cladding layer is formed using a second conductivity-type upper cladding layer, and an i-type upper cladding layer, which has a bent portion by being shifted in the perpendicular direction with respect to the main extending direction of the waveguide.

Abstract: A multi-wavelength laser light source includes a gain waveguide having a gain medium and a first mirror; and a waveguide wavelength filter, wherein the waveguide wavelength filter comprises: a first optical waveguide coupled to an end of the gain waveguide opposite to the first mirror, a plurality of ring resonators having input ports coupled to the first optical waveguide and having resonance wavelengths different from each other, a plurality of output waveguides coupled to respective output ports of the plurality of ring resonators, and second mirrors configured to correspondingly reflect, back to the plurality of ring resonators, at least part of light that has traveled via the output waveguides from the plurality of ring resonators.