Abstract: In a substrate processing apparatus for processing a substrate in a hermetic container equipped with an exhaust tube and a gas introducing tube, an introducing port of the gas introducing tube is positioned inside the exhaust tube to make uniform an atmosphere in the hermetic container, in the vicinity of an exhaust port of the exhaust tube.

Abstract: An electron source producing apparatus for forming an electron-emission part on a conductive member disposed on a substrate in an atmosphere containing a desired gas. The apparatus includes a container for forming a hermetic atmosphere between the container and a surface of the substrate on which the conductive member is formed. The container has a gas inlet and a gas outlet. A diffusing member is for diffusing an introduced gas, and is disposed between the gas inlet and the surface of the substrate. A resisting member provides exhaust resistance, and is disposed between the gas outlet and the surface of the substrate and is separated from the gas outlet. The resisting member is disposed closer to the surface of the substrate than is the diffusing member.

Abstract: In an electron source manufacturing apparatus, the quantity of heat generated from an electron source substrate is measured. A temperature of a support member for the electron source substrate is controlled based on the measured quantity of heat generated. A variation in performances of electron source substrates is suppressed, which increase their life.

Abstract: In a substrate processing apparatus for processing a substrate in a hermetic container equipped with an exhaust tube and a gas introducing tube, an introducing port of the gas introducing tube is positioned inside the exhaust tube to make uniform an atmosphere in the hermetic container, in the vicinity of an exhaust port of the exhaust tube.

Abstract: An electron source producing apparatus for forming an electron-emission part on a conductive member disposed on a substrate in an atmosphere containing a desired gas. The apparatus includes a container for forming a hermetic atmosphere between the container and a surface of the substrate on which the conductive member is formed. The container has a gas inlet and a gas outlet. A diffusing member is for diffusing an introduced gas, and is disposed between the gas inlet and the surface of the substrate. A resisting member provides exhaust resistance, and is disposed between the gas outlet and the surface of the substrate and is separated from the gas outlet. The resisting member is disposed closer to the surface of the substrate than is the diffusing member.

Abstract: In an electron source manufacturing apparatus, the quantity of heat generated from an electron source substrate is measured. A temperature of a support member for the electron source substrate is controlled based on the measured quantity of heat generated. A variation in performances of electron source substrates is suppressed, which increase their life.

Abstract: A film forming apparatus for forming a film on a substrate is provided, the apparatus including gas introduction unit including a nozzle for jetting a gas for forming the film toward a surface of the substrate and an inlet for introducing the gas, the gas introduction unit having a plurality of nozzles connected to the one inlet by divergent paths.

Abstract: A microwave plasma processing apparatus comprises a vacuum processing chamber, a substrate disposed within the vacuum processing chamber, a microwave guide coupled to the vacuum processing chamber, and fins for dividing a microwave in the electric field direction. The length of fins are different such that the uniformity of the film thickness distribution on the substrate of large area can be improved.