Patents by Inventor Kazumasa Togano

Kazumasa Togano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050215436
    Abstract: A high temperature superconductive Josephson tunnel junction of which a plasma frequency varies depending on an intersecting angle is provided by bonding two single crystals of a high temperature superconductor on a substrate in a range of intersecting angles of 0 degree to 90 degrees and by forming a single high temperature superconductive Josephson tunnel junction in a bonded portion.
    Type: Application
    Filed: September 18, 2003
    Publication date: September 29, 2005
    Inventors: Yoshihiko Takano, Takeshi Hatano, Sangjae Kim, Akira Ishii, Shunichi Arisawa, Kazumasa Togano, Masashi Tachiki, Tsutomu Yamashita
  • Patent number: 6839578
    Abstract: A method of forming a novel high temperature superconducting Josephson junction which is capable of achieving a formation of a Josephson junction having high characteristics conveniently and quickly without necessitating costly micromachining facilities. Two high temperature superconducting whisker crystals are crossed with each other on a substrate and subjected to thermal treatment to form a Josephson junction between the two high temperature superconducting whisker crystals.
    Type: Grant
    Filed: June 9, 2003
    Date of Patent: January 4, 2005
    Assignee: National Institute for Materials Science
    Inventors: Yoshihiko Takano, Takeshi Hatano, Akira Ishii, Syunichi Arisawa, Kazumasa Togano
  • Patent number: 6682621
    Abstract: A method of forming a novel high temperature superconducting Josephson junction which is capable of achieving a formation of a Josephson junction having high characteristic conveniently and quickly without necessitating costly micromachining facilities. Two high temperature superconducting whisker crystals are crossed with each other on a substrate and subjected to thermal treatment to form a Josephson junction between the two high temperature superconducting whisker crystals.
    Type: Grant
    Filed: August 21, 2001
    Date of Patent: January 27, 2004
    Assignee: National Institute for Materials Science
    Inventors: Yoshihiko Takano, Takeshi Hatano, Akira Ishii, Syunichi Arisawa, Kazumasa Togano
  • Publication number: 20030211946
    Abstract: A method of forming a novel high temperature superconducting Josephson junction which is capable of achieving a formation of a Josephson junction having high characteristics conveniently and quickly without necessitating costly micromachining facilities. Two high temperature superconducting whisker crystals are crossed with each other on a substrate and subjected to thermal treatment to form a Josephson junction between the two high temperature superconducting whisker crystals.
    Type: Application
    Filed: June 9, 2003
    Publication date: November 13, 2003
    Inventors: Yoshihiko Takano, Takeshi Hatano, Akira Ishii, Syunichi Arisawa, Kazumasa Togano
  • Patent number: 6569813
    Abstract: A method of producing a composite material of a bismuth 2212 phase and a metallic substrate, wherein the first and second baking are conducted as an isothermal heat treatment. According to this process, temperature control is easy, high productivity is obtained, and the critical current density is improved.
    Type: Grant
    Filed: January 22, 2001
    Date of Patent: May 27, 2003
    Assignee: Japan as represented by Director General of National Research Institute for Metals
    Inventors: Hitoshi Kitaguchi, Hirohaki Kumakura, Kazumasa Togano
  • Publication number: 20020025586
    Abstract: A method of forming a novel high temperature superconducting Josephson junction which is capable of achieving a formation of a Josephson junction having high characteristic conveniently and quickly without necessitating costly micromachining facilities. Two high temperature superconducting whisker crystals are crossed with each other on a substrate and subjected to thermal treatment to form a Josephson junction between the two high temperature superconducting whisker crystals.
    Type: Application
    Filed: August 21, 2001
    Publication date: February 28, 2002
    Inventors: Yoshihiko Takano, Takeshi Hatano, Akira Ishii, Syunichi Arisawa, Kazumasa Togano
  • Patent number: 6340657
    Abstract: A simple and low-cost method for producing a thin film of ribbon-like oxide high-temperature (high-Tc) superconductor, which comprises placing a solid starting material for the oxide high-temperature superconductor on a substrate and heating it at a temperature in the vicinity of the melting point of the solid starting material under ambient pressure in an oxygen atmosphere.
    Type: Grant
    Filed: February 25, 2000
    Date of Patent: January 22, 2002
    Assignee: Japan as represented by Director General of National Research Institute for Metals
    Inventors: Shunichi Arisawa, Kazumasa Togano, Takeshi Hatano, Hanping Miao
  • Publication number: 20010007849
    Abstract: A method of producing a composite material of a bismuth 2212 phase and a metallic substrate, wherein the first and second baking are conducted as an isothermal heat treatment.
    Type: Application
    Filed: January 22, 2001
    Publication date: July 12, 2001
    Inventors: Hitoshi Kitaguchi, Hirohaki Kumakura, Kazumasa Togano
  • Patent number: 6240620
    Abstract: In a process in which a composite consisting of a metallic base and a superconductor mainly containing a Bi2Sr2CaCu2Ox superconducting phase is formed into a composite wire or wire, the composite is subjected to calcination and cold working before heat treatment for crystallization from a partial molten state.
    Type: Grant
    Filed: November 5, 1998
    Date of Patent: June 5, 2001
    Assignee: National Research Institute for Metals
    Inventors: Hitoshi Kitaguchi, Hanping Miao, Hiroaki Kumakura, Kazumasa Togano
  • Patent number: 4746373
    Abstract: A powder having a predetermined composition is filled in a tube. The tube is drawn to obtain a wire and the wire is rolled to obtain a tape-like starting body. Then, a laser beam is irradiated on the part of the tape to heat and melt the part of the tape. The starting body is rapidly heated and then cooled, thereby the part of the starting body is melted and solidified to form a compound superconductor layer.
    Type: Grant
    Filed: May 14, 1986
    Date of Patent: May 24, 1988
    Assignees: Kabushiki Kaisha Toshiba, National Research Institute for Metals
    Inventors: Yutaka Yamada, Satoru Murase, Mitsuo Sasaki, Ei Nakamura, Hiroaki Kumakura, Kazumasa Togano, Kyoji Tachikawa
  • Patent number: 4729801
    Abstract: A process for producing a superconducting compound tape or wire material, which comprises irradiating electron beams at an acceleration voltage of 5 to 150 KV on a starting tape or wire material consisting essentially of constituent elements of a superconducting compound, a compound between the constituent elements, and/or an alloy between the constituent elements at a power density, determined on the starting tape or wire material, of 1.times.10.sup.3 to 1.times.10.sup.7 W/cm.sup.2 while the starting tape or wire material is moved at a rate of 1 cm to 10 m/sec relative to the electron beams.
    Type: Grant
    Filed: July 30, 1986
    Date of Patent: March 8, 1988
    Assignee: National Research Institute for Metals
    Inventors: Kazumasa Togano, Hiroaki Kumakura, Hirosada Irie, Susumu Tsukamoto, Kyoji Tachikawa
  • Patent number: 4664933
    Abstract: An A-15 type superconductor compound having the composition A.sub.3 B composed of niobium (element A) and at least one element (B) selected from gallium, aluminum and germanium is produced by coating at least one element B on a substrate of niobium, heat-treating the coated niobium substrate at a temperature of 500.degree. to 2,000.degree. C. for 1 second to 300 hours to form intermetallic compounds of niobium and the coated element which are richer in element B than A-15 A.sub.3 B compound, and thereafter subjecting the substrate to the irradiation of high density energy beams such as electron beams or laser beams to form the A-15 type superconductor compound having the composition A.sub.3 B.
    Type: Grant
    Filed: December 11, 1985
    Date of Patent: May 12, 1987
    Assignee: National Research Institute for Metals
    Inventors: Kyoji Tachikawa, Kazumasa Togano, Hiroaki Kumakura
  • Patent number: 4341572
    Abstract: In a method for producing a Nb.sub.3 Sn superconductor which comprises drawing a composite having a core of a Nb-Hf alloy containing 0.1 to 30 atomic % of Hf and a sheath containing Cu and Sn, and heat-treating the composite to form a Nb.sub.3 Sn layer between the core and the sheath; the improvement wherein the sheath is formed of pure Cu, a Cu-Sn alloy containing not more than 6 atomic % of Sn, a Cu-Ga alloy containing not more than 20 atomic % of Ga, a Cu-Al alloy containing not more than 20 atomic % of Al, a Cu-Ga-Sn alloy containing not more than 6 atomic % of Sn and not more than 20 atomic % of Ga, or a Cu-Al-Sn alloy containing not more than 6 atomic % of Sn and not more than 20 atomic % of Al; and after the drawing, a Sn film is coated on the surface of the sheath, and then the product having a Sn film coated thereon is heat-treated.
    Type: Grant
    Filed: November 10, 1980
    Date of Patent: July 27, 1982
    Assignee: National Research Institute for Metals
    Inventors: Kyoji Tachikawa, Kazumasa Togano, Takao Takeuchi
  • Patent number: 4321749
    Abstract: A method for producing a V.sub.3 Al superconductor which comprises making a composite composed of a sheath portion of a copper alloy containing 1 to 15 atomic percent of germanium, 1 to 15 atomic percent of silicon or 2 to 25 atomic percent of gallium and surrounded by the sheath portion, at least one core portion of a vanadium-aluminum alloy containing 0.5 to 20 atomic percent of aluminum; elongating the composite; and then heat-treating the elongated composite thereby to form a V.sub.3 (Al, Ge), V.sub.3 (Al, Si) or V.sub.3 (Al, Ga) layer between the sheath portion and the core portion.
    Type: Grant
    Filed: November 2, 1979
    Date of Patent: March 30, 1982
    Assignee: National Research Institute for Metals
    Inventors: Kyoji Tachikawa, Kiyoshi Inoue, Kazumasa Togano