Abstract: A filtration apparatus that removes chips from a chip-containing machining fluid is applied which effectively prevents clogging of a filtration filter that makes up the apparatus. A filtration apparatus 1 is provided with a magnet 9 attached to an outer wall surface of a drum housing chamber 5, the magnet 9 functions as means for fixing chips in the machining fluid that flows into the drum housing chamber 5 from an inlet 16 on a bottom surface 5B or a slope 5A of the drum housing chamber 5 by a magnetic force, and the periphery of the inlet 16 is configured as a magnet non-existent section 17 where the magnet 9 does not exist so as to suppress a phenomenon that chips in the machining fluid are fixed near a top edge of the slope 5A of the drum housing chamber 5 by the magnetic force of the magnet 9.

Abstract: A post-dry etching cleaning liquid composition for cleaning a substrate after dry etching is provided, the cleaning liquid composition containing at least one type of fluorine compound, glyoxylic acid, at least one type of organic acid salt, and water. With regard to the fluorine compound, ammonium fluoride may be used. With regard to the organic acid salt, at least one of ammonium oxalate, ammonium tartarate, ammonium citrate, and ammonium acetate may be used.

Abstract: A post-dry etching cleaning liquid composition for cleaning a substrate after dry etching is provided, the cleaning liquid composition containing at least one type of fluorine compound, glyoxylic acid, at least one type of organic acid salt, and water. With regard to the fluorine compound, ammonium fluoride may be used. With regard to the organic acid salt, at least one of ammonium oxalate, ammonium tartarate, ammonium citrate, and ammonium acetate may be used.

Abstract: After the resist stripping liquid is supplied to the surface of the substrate which is being rotated at a first rotational speed, the rotational speed of the substrate is reduced from the first rotational speed to a second rotational speed with the supply of the resist stripping liquid to the surface of the substrate continued, thereby forming a liquid film by a mount of the resist stripping liquid on the surface of the substrate and then, maintaining a state where the liquid film is formed.

Abstract: A post-dry etching cleaning liquid composition for cleaning a substrate after dry etching is provided, the cleaning liquid composition containing at least one type of fluorine compound, glyoxylic acid, at least one type of organic acid salt, and water. With regard to the fluorine compound, ammonium fluoride may be used. With regard to the organic acid salt, at least one of ammonium oxalate, ammonium tartarate, ammonium citrate, and ammonium acetate may be used.

Abstract: One example of a separation-material composition for a photo-resist according to the present invention comprises 5.0 weight % of sulfamic acid, 34.7 weight % of H2O, 0.3 weight % of ammonium 1-hydrogen difluoride, 30 weight % of N,N-dimethylacetamide and 30 weight % of diethylene glycol mono-n-buthyl ether. Another example of a separation-material composition for a photo-resist according to the present invention comprises 1-hydroxyethylidene-1, 3.0 weight % of 1-diphosphonic acid, 0.12 weight % of ammonium fluoride, 48.38 weight % of H2O and 48.5 weight % of diethylene glycol mono-n-buthyl ether. The separation-material composition for the photo-resist is mainly used for a medicinal liquid washing liquid/scientific liquid in order to remove the photo-resist residuals and the by-product polymer after an ashing process of a photo-resist mask.

Abstract: One example of a separation-material composition for a photo-resist according to the present invention comprises 5.0 weight % of sulfamic acid, 34.7 weight % of H2O, 0.3 weight % of ammonium 1-hydrogen difluoride, 30 weight % of N,N-dimethylacetamide and 30 weight % of diethylene glycol mono-n-buthyl ether. Another example of a separation-material composition for a photo-resist according to the present invention comprises 1-hydroxyethylidene-1, 3.0 weight % of 1-diphosphonic acid, 0.12 weight % of anmonium fluoride, 48.38 weight % of H2O and 48.5 weight % of diethylene glycol mono-n-buthl ether. The separation-material composition for the photo-resist is mainly used for a medicinal liquid washing liquid/scientific liquid in order to remove the photo-resist residuals and the by-product polymer after an ashing process of a photo-resist mask.

Abstract: A post-dry etching cleaning liquid composition for cleaning a substrate after dry etching is provided, the cleaning liquid composition containing at least one type of fluorine compound, glyoxylic acid, at least one type of organic acid salt, and water. With regard to the fluorine compound, ammonium fluoride may be used. With regard to the organic acid salt, at least one of ammonium oxalate, ammonium tartarate, ammonium citrate, and ammonium acetate may be used.

Abstract: A single wafer cleaning method and a cleaning apparatus thereof are provided in which the transition to rinse treatment is swiftly performed without being influenced by a chemical liquid component, and a polymer and a residue of chemical liquid are suppressed to reduce defects on a substrate. The single wafer cleaning method according to an embodiment of the present invention is a single wafer cleaning method of performing cleaning by a chemical liquid 8 and a rinse liquid 14 while rotating a substrate-to-be-cleaned 30, in which after chemical liquid treatment is performed by moving a chemical liquid nozzle 10 over the substrate-to-be-cleaned 30, rinse treatment is performed on the substrate-to-be-cleaned 30 by discharging the rinse liquid 14 from a rinse nozzle 16 disposed fixedly at a position not interfering with the movement of the chemical liquid nozzle 10.

Abstract: After the resist stripping liquid is supplied to the surface of the substrate which is being rotated at a first rotational speed, the rotational speed of the substrate is reduced from the first rotational speed to a second rotational speed with the supply of the resist stripping liquid to the surface of the substrate continued, thereby forming a liquid film by a mount of the resist stripping liquid on the surface of the substrate and then, maintaining a state where the liquid film is formed.

Abstract: Provided is a method of manufacturing a semiconductor device capable of effectively removing impurity product attached to a semiconductor film while suppressing coming off of, for example, hemispherical grains formed on a semiconductor film containing an impurity. Spherical or hemispherical grains are formed on the surface of an amorphous silicon film containing phosphorus which forms a bottom electrode of a capacitor. In order to suppress depletion of the bottom electrode, annealing is performed in PH3, atmosphere so as to diffuse phosphorus to the grains. Cleaning is performed using hot water (deionized water) in order to remove the impurity product attached onto the surface of the bottom electrode by annealing. A native oxide film formed on the surface of the bottom electrode is removed by cleaning using a mixed solution of hydrofluoric acid and water. A dielectric film and a top electrode are formed in order so as to cover the surface of the bottom electrode.

Abstract: Provided is a method of manufacturing a semiconductor device capable of effectively removing impurity product attached to a semiconductor film while suppressing coming off of, for example, hemispherical grains formed on a semiconductor film containing an impurity. Spherical or hemispherical grains are formed on the surface of an amorphous silicon film containing phosphorus which forms a bottom electrode of a capacitor. In order to suppress depletion of the bottom electrode, annealing is performed in PH3 atmosphere so as to diffuse phosphorus to the grains. Cleaning is performed using hot water (deionized water) in order to remove the impurity product attached onto the surface of the bottom electrode by annealing. A native oxide film formed on the surface of the bottom electrode is removed by cleaning using a mixed solution of hydrofluoric acid and water. A dielectric film and a top electrode are formed in order so as to cover the surface of the bottom electrode. Thereby, a cylindrical capacitor is fabricated.

Abstract: One example of a separation-material composition for a photo-resist according to the present invention comprises 5.0 weight % of sulfamic acid, 34.7 weight % of H2O, 0.3 weight % of ammonium 1-hydrogen difluoride, 30 weight % of N,N-dimethylacetamide and 30 weight % of diethylene glycol mono-n-buthyl ether. Another example of a separation-material composition for a photo-resist according to the present invention comprises 1-hydroxyethylidene-1, 3.0 weight % of 1-diphosphonic acid, 0.12 weight % of anmonium fluoride, 48.38 weight % of H2O and 48.5 weight % of diethylene glycol mono-n-buthl ether.

Abstract: Provided is a method of manufacturing a semiconductor device capable of effectively removing impurity product attached to a semiconductor film while suppressing coming off of, for example, hemispherical grains formed on a semiconductor film containing an impurity. Spherical or hemispherical grains are formed on the surface of an amorphous silicon film containing phosphorus which forms a bottom electrode of a capacitor. In order to suppress depletion of the bottom electrode, annealing is performed in PH3 atmosphere so as to diffuse phosphorus to the grains. Cleaning is performed using hot water (deionized water) in order to remove the impurity product attached onto the surface of the bottom electrode by annealing. A native oxide film formed on the surface of the bottom electrode is removed by cleaning using a mixed solution of hydrofluoric acid and water. A dielectric film and a top electrode are formed in order so as to cover the surface of the bottom electrode. Thereby, a cylindrical capacitor is fabricated.

Abstract: An apparatus and method for drying semiconductor substrates to dry about 50 semiconductor wafers by evaporating an organic solvent and blowing the evaporated organic solvent onto these semiconductor wafers through a nozzle, comprises the evaporate organic solvent being blown onto the semiconductor wafers from a direction aslant by an angle from 20.degree. to 50.degree. from a vertical direction toward the semiconductor wafers. At this time, the initial spray amount of the evaporated organic solvent is not less than 0.8 cc/second and not more than 1.5 cc/second, additionally, the amount of the organic solvent used for drying is not less than 70 cc/batch and not more than 200 cc/batch.