Abstract: An information processing device (40) according to one embodiment of the present disclosure includes: an analysis unit (41) being a first data generation unit that generates objective score data, which indicates objective scores in time series, based on a plurality of pieces of objective data regarding a patient; a processing unit (42) being a second data generation unit that generates subjective score data, which indicates subjective scores in time series, based on a plurality of pieces of subjective data obtained from the patient; and a generation unit (44) being an image generation unit that generates a score image indicating the objective score data and the subjective score data.

Abstract: A display control device includes: a display region setting unit for changing a position of a boundary line of display regions provided on a screen to dynamically change a size of the display regions, in accordance with an event; a display control unit provides arrangement regions for arranging display objects in the display regions, and change a relative positional relationship of the arrangement regions on the same display region of the display regions, in accordance with change in size of the one or plurality of display regions; and a priority setting unit for setting relative priority regarding the arrangement regions, wherein where the relative positional relationship between the arrangement regions is changed, which causes the arrangement regions to be within a predetermined distance, the display control unit controls display of the display objects arranged on a same arrangement region based on the priority set regarding the arrangement regions.

Abstract: A display control device includes: a display region setting unit for changing a position of a boundary line of display regions provided on a screen to dynamically change a size of the display regions, in accordance with an event; a display control unit provides arrangement regions for arranging display objects in the display regions, and change a relative positional relationship of the arrangement regions on the same display region of the display regions, in accordance with change in size of the one or plurality of display regions; and a priority setting unit for setting relative priority regarding the arrangement regions, wherein where the relative positional relationship between the arrangement regions is changed, which causes the arrangement regions to be within a predetermined distance, the display control unit controls display of the display objects arranged on a same arrangement region based on the priority set regarding the arrangement regions.

Abstract: A semiconductor device includes a semiconductor substrate and a through electrode provided in a through hole formed in the semiconductor substrate. The through electrode partially protrudes from a back surface of the semiconductor substrate, which is opposite to an active surface thereof. The through electrode includes a resin core and a conductive film covering at least a part of the resin core.

Abstract: A semiconductor device includes a semiconductor substrate and a through electrode provided in a through hole formed in the semiconductor substrate. The through electrode partially protrudes from a back surface of the semiconductor substrate, which is opposite to an active surface thereof. The through electrode includes a resin core and a conductive film covering at least a part of the resin core.

Abstract: A package includes a base member and a lid member joined to the base member while forming, between the lid and base members, an internal space which stores an electronic component. A joined section of the base and lid members includes a first welded section formed by joining the base and lid members along an x axis direction using seam welding and a second welded section formed by joining the base and lid members along a y axis direction using the seam welding. In plan view, the first and second welded sections do not overlap each other. An area where an area formed by extending the first welded section in the x axis direction and an area formed by extending the second welded section in the y axis direction overlap each other is located on the outer side with respect to the contour of the lid member.

Abstract: A semiconductor device includes a semiconductor substrate and a through electrode provided in a through hole formed in the semiconductor substrate. The through electrode partially protrudes from a back surface of the semiconductor substrate, which is opposite to an active surface thereof. The through electrode includes a resin core and a conductive film covering at least a part of the resin core.

Abstract: A package includes a base member and a lid member joined to the base member while forming, between the lid and base members, an internal space which stores an electronic component. A joined section of the base and lid members includes a first welded section formed by joining the base and lid members along an x axis direction using seam welding and a second welded section formed by joining the base and lid members along a y axis direction using the seam welding. In plan view, the first and second welded sections do not overlap each other. An area where an area formed by extending the first welded section in the x axis direction and an area formed by extending the second welded section in the y axis direction overlap each other is located on the outer side with respect to the contour of the lid member.

Abstract: A semiconductor device includes a semiconductor substrate and a through electrode provided in a through hole formed in the semiconductor substrate. The through electrode partially protrudes from a back surface of the semiconductor substrate, which is opposite to an active surface thereof. The through electrode includes a resin core and a conductive film covering at least a part of the resin core.

Abstract: A semiconductor device includes a semiconductor substrate and a through electrode provided in a through hole formed in the semiconductor substrate. The through electrode partially protrudes from a back surface of the semiconductor substrate, which is opposite to an active surface thereof. The through electrode includes a resin core and a conductive film covering at least a part of the resin core.

Abstract: A manufacturing method for a semiconductor device, includes: preparing a semiconductor wafer having an active surface, a side surface, a rear surface on the side opposite the active surface, and a plurality of semiconductor elements formed on the active surface; forming the side surface of the semiconductor wafer so that an angle defined by at least a portion of the side surface of the semiconductor wafer and the rear surface of the semiconductor wafer becomes an acute angle; and performing a spin etching in which etching liquid is dripped onto the rear surface of the semiconductor wafer while blowing air toward the active surface of the semiconductor wafer and toward the side surface of the semiconductor wafer and while rotating the semiconductor wafer.

Abstract: A dicing sheet which supports electronic-component aggregation with adhesive in the case of separating the electronic-component aggregation in which a plurality of electronic components are integrated, has a substrate and an adhesion layer which is formed at one surface side of the substrate, in which a concave portion is formed on a surface of the adhesion layer, and the concave portion is formed so that a convex shape member projected from an adhesion surface of the electronic-component aggregation which is adhered to the dicing sheet is inserted.

Abstract: A semiconductor chip is provided that is highly packageable and particularly well suited for mounting on a circuit board having a curved surface. The semiconductor chip comprises a warpage control film that controls the warpage of a substrate.

Abstract: A semiconductor chip includes: a semiconductor substrate; a penetrating electrode which is formed through the semiconductor substrate from a first surface to a second surface of the semiconductor substrate and has a projection which projects from the second surface; an insulating layer formed over an entire surface of the second surface. The insulating layer includes a first insulating section formed in a region around the projection and a second insulating section other than the first insulating section. The second insulating section is formed to be thinner than a thickest area of the first insulating section.

Abstract: There is provided a droplet ejection head that is small in size, provides high productivity, and is extremely reliable. The droplet ejection head of the present invention includes pressure generating chambers that are connected to nozzle apertures, an elastic membrane (i.e., a diaphragm) that constitutes a portion of the pressure generating chambers, piezoelectric elements that are placed on a surface of the elastic membrane on the opposite side from the pressure generating chambers, and cause pressure changes to be generated inside the pressure generating chambers, and drive IC (i.e., drive elements) that drive the piezoelectric elements. In this droplet ejection head, the drive IC are flip-chip bonded to terminals that are provided on the piezoelectric elements.

Abstract: A manufacturing method for a semiconductor device, includes: preparing a semiconductor wafer having an active surface, a side surface, a rear surface on the side opposite the active surface, and a plurality of semiconductor elements formed on the active surface; forming the side surface of the semiconductor wafer so that an angle defined by at least a portion of the side surface of the semiconductor wafer and the rear surface of the semiconductor wafer becomes an acute angle; and performing a spin etching in which etching liquid is dripped onto the rear surface of the semiconductor wafer while blowing air toward the active surface of the semiconductor wafer and toward the side surface of the semiconductor wafer and while rotating the semiconductor wafer.

Abstract: There is provided a droplet ejection head that is small in size, provides high productivity, and is extremely reliable. The droplet ejection head of the present invention includes pressure generating chambers that are connected to nozzle apertures, an elastic membrane (i.e., a diaphragm) that constitutes a portion of the pressure generating chambers, piezoelectric elements that are placed on a surface of the elastic membrane on the opposite side from the pressure generating chambers, and cause pressure changes to be generated inside the pressure generating chambers, and drive IC (i.e., drive elements) that drive the piezoelectric elements. In this droplet ejection head, the drive IC are flip-chip bonded to terminals that are provided on the piezoelectric elements.

Abstract: A dicing sheet which supports electronic-component aggregation with adhesive in the case of separating the electronic-component aggregation in which a plurality of electronic components are integrated, has a substrate and an adhesion layer which is formed at one surface side of the substrate, in which a concave portion is formed on a surface of the adhesion layer, and the concave portion is formed so that a convex shape member projected from an adhesion surface of the electronic-component aggregation which is adhered to the dicing sheet is inserted.

Abstract: A semiconductor chip is provided that is highly packageable and particularly well suited for mounting on a circuit board having a curved surface. The semiconductor chip comprises a warpage control film that controls the warpage of a substrate.

Abstract: A semiconductor device includes a semiconductor substrate with a through hole formed therein, a first insulating film formed inside the through hole, and an electrode formed on an inner side of the first insulating film inside the through hole. The first insulating film at the rear surface side of the semiconductor substrate protrudes beyond the rear surface, and the electrode protrudes on both the active surface side and the rear surface side of the semiconductor substrate. An outer diameter of a protruding portion on the active surface side is larger than an outer diameter of the first insulating film inside the through hole, and a protruding portion on the rear surface side protrudes further beyond the first insulating film to have a side surface thereof exposed. The semiconductor device has improved connectivity and connection strength and, in particular, has excellent resistance to shearing force when used in three-dimensional packaging technology.