Patents by Inventor Kazumi Kubo
Kazumi Kubo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240124976Abstract: A film forming method includes causing adsorption of a source gas on a substrate surface having a convex portion, and forming a film on the substrate surface using a thermal reaction between the adsorbed source gas and a reactive gas. The substrate is disposed on a surface of a turntable provided inside a vacuum chamber. An adsorption region in which the causing is performed, and a reaction region in which the forming is performed, are provided inside the vacuum chamber above the turntable along a circumferential direction of the turntable. The causing and the forming are repeated with respect to the substrate by rotating the turntable in a state where the source and reactive gases are supplied to the adsorption and reaction regions, respectively. At least one of the source gas supply and the reactive gas supply supplies the gas at an angle with respect to a vertically downward direction.Type: ApplicationFiled: September 28, 2023Publication date: April 18, 2024Inventor: Kazumi KUBO
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Patent number: 11952661Abstract: A deposition method includes: forming an adsorption inhibiting region on an adsorption site formed on a substrate, by causing the adsorption site to adsorb adsorption inhibiting radicals by a predetermined amount; causing an area on the adsorption site, on which the adsorption inhibiting region is not formed, to adsorb a raw material gas; and depositing a film of a reaction product on the adsorption site by causing the raw material gas adsorbed on the adsorption site to react with a reactant gas activated by a plasma.Type: GrantFiled: July 9, 2019Date of Patent: April 9, 2024Assignee: Tokyo Electron LimitedInventors: Hitoshi Kato, Kazumi Kubo, Yutaka Takahashi
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Patent number: 11404265Abstract: A film deposition method is provided. In the method, chlorine gas is activated in a plasma generator, and an adsorption inhibitor group is formed by adsorbing the activated chlorine gas on a surface of a substrate in a processing chamber. A source gas containing chlorine and one of silicon and a metal is adsorbed on a region without the adsorption inhibitor group of the surface of the substrate, and a nitride film is deposited by supplying a nitriding gas to the surface of the substrate and causing the nitriding gas to react with the source gas. The substrate on which the nitride film is deposited is carried out of the processing chamber, and an inside of the plasma generator is purged with activated oxygen gas.Type: GrantFiled: January 23, 2020Date of Patent: August 2, 2022Assignee: Tokyo Electron LimitedInventors: Kazumi Kubo, Takayuki Karakawa, Yutaka Takahashi
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Patent number: 11170999Abstract: A deposition method includes forming a nitride film on a surface of a substrate; and performing, after the depositing, plasma purging supplying a noble gas activated as a plasma. The forming of the nitride film includes a) forming adsorption inhibitors on the surface of the substrate, by supplying a chlorine gas activated by a plasma and by causing the activated chlorine gas to be adsorbed on the surface of the substrate; b) causing a raw material gas, containing silicon and chlorine or a metal and chlorine, to be adsorbed on a region in the surface of the substrate on which the adsorption inhibitors are not present, by supplying the raw material gas on the surface of the substrate; and c) depositing the nitride film on the surface of the substrate, by supplying a nitriding gas to cause the raw material gas to be reacted with the nitriding gas.Type: GrantFiled: January 24, 2020Date of Patent: November 9, 2021Assignee: Tokyo Electron LimitedInventors: Kazumi Kubo, Yutaka Takahashi, Takayuki Karakawa
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Patent number: 11075074Abstract: A method for depositing a silicon nitride film is provided to fill a recessed pattern formed in a surface of a substrate with a silicon nitride film. In the method, a first silicon nitride film is deposited in the recessed pattern formed in the surface of the substrate. The first silicon nitride film has a V-shaped cross section decreasing its film thickness upward from a bottom portion of the recessed pattern. A second silicon nitride film conformal to a surface shape of the first silicon nitride film is deposited.Type: GrantFiled: August 7, 2018Date of Patent: July 27, 2021Assignee: Tokyo Electron LimitedInventors: Hitoshi Kato, Yutaka Takahashi, Kazumi Kubo
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Patent number: 10748758Abstract: A method for depositing a silicon nitride film is provided. In the method, an adsorption blocking region is formed such that a chlorine-containing gas conformally adsorbs on a surface of a substrate by adsorbing chlorine radicals on the surface of the substrate. A source gas that contains silicon and chlorine is adsorbed on the adsorption blocking region adsorbed on the surface of the substrate. A silicon nitride film is deposited on the surface of the substrate by supplying a nitriding gas activated by plasma to the source gas adsorbed on the surface of the substrate.Type: GrantFiled: August 7, 2018Date of Patent: August 18, 2020Assignee: Tokyo Electron LimitedInventors: Hitoshi Kato, Yutaka Takahashi, Kazumi Kubo
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Publication number: 20200251326Abstract: A deposition method includes forming a nitride film on a surface of a substrate; and performing, after the depositing, plasma purging supplying a noble gas activated as a plasma. The forming of the nitride film includes a) forming adsorption inhibitors on the surface of the substrate, by supplying a chlorine gas activated by a plasma and by causing the activated chlorine gas to be adsorbed on the surface of the substrate; b) causing a raw material gas, containing silicon and chlorine or a metal and chlorine, to be adsorbed on a region in the surface of the substrate on which the adsorption inhibitors are not present, by supplying the raw material gas on the surface of the substrate; and c) depositing the nitride film on the surface of the substrate, by supplying a nitriding gas to cause the raw material gas to be reacted with the nitriding gas.Type: ApplicationFiled: January 24, 2020Publication date: August 6, 2020Inventors: Kazumi KUBO, Yutaka TAKAHASHI, Takayuki KARAKAWA
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Publication number: 20200243330Abstract: A film deposition method is provided. In the method, chlorine gas is activated in a plasma generator, and an adsorption inhibitor group is formed by adsorbing the activated chlorine gas on a surface of a substrate in a processing chamber. A source gas containing chlorine and one of silicon and a metal is adsorbed on a region without the adsorption inhibitor group of the surface of the substrate, and a nitride film is deposited by supplying a nitriding gas to the surface of the substrate and causing the nitriding gas to react with the source gas. The substrate on which the nitride film is deposited is carried out of the processing chamber, and an inside of the plasma generator is purged with activated oxygen gas.Type: ApplicationFiled: January 23, 2020Publication date: July 30, 2020Inventors: Kazumi KUBO, Takayuki KARAKAWA, Yutaka TAKAHASHI
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Patent number: 10643837Abstract: A method for depositing a silicon nitride film is provided to fill a recessed pattern formed in a surface of a substrate. In the method, a first adsorption blocking region is formed by adsorbing first chlorine radicals such that an amount of adsorption increases upward from a bottom portion of the recessed pattern. A source gas that contains silicon and chlorine adsorbs on an adsorption site where the first adsorption site is not formed. A molecular layer of a silicon nitride film is deposited so as to have a V-shaped cross section. A second adsorption blocking region is formed by adsorbing second chlorine radicals on the molecular layer of the silicon nitride film. The molecular layer of the silicon nitride film is modified by nitriding the molecular layer while removing the second adsorption blocking region.Type: GrantFiled: August 7, 2018Date of Patent: May 5, 2020Assignee: Tokyo Electron LimitedInventors: Hitoshi Kato, Yutaka Takahashi, Kazumi Kubo
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Patent number: 10636648Abstract: A film deposition method for depositing a silicon nitride film of selectively depositing on a flat surface of a substrate between minute recesses including a chlorine radical adsorbing step of supplying a chlorine containing gas that is activated onto a front surface of the substrate to cause the chlorine radical to be adsorbed entirely on the front surface of the substrate, a nitriding step of supplying a nitriding gas that is activated onto the substrate on which the chlorine radical adsorbs, causing the chlorine radical adsorbing on the flat surface, and nitride the flat surface from among the front surface of the substrate so as to form a silicon adsorption site, and a raw gas adsorbing step of supplying a raw gas that contains silicon and chlorine onto the substrate so as to cause the raw gas to adsorb onto the silicon adsorption site.Type: GrantFiled: November 21, 2018Date of Patent: April 28, 2020Assignee: Tokyo Electron LimitedInventors: Kazumi Kubo, Yutaka Takahashi, Hitoshi Kato
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Publication number: 20200017968Abstract: A deposition method includes: forming an adsorption inhibiting region on an adsorption site formed on a substrate, by causing the adsorption site to adsorb adsorption inhibiting radicals by a predetermined amount; causing an area on the adsorption site, on which the adsorption inhibiting region is not formed, to adsorb a raw material gas; and depositing a film of a reaction product on the adsorption site by causing the raw material gas adsorbed on the adsorption site to react with a reactant gas activated by a plasma.Type: ApplicationFiled: July 9, 2019Publication date: January 16, 2020Inventors: Hitoshi KATO, Kazumi KUBO, Yutaka TAKAHASHI
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Publication number: 20190172700Abstract: A film deposition method for depositing a silicon nitride film of selectively depositing on a flat surface of a substrate between minute recesses including a chlorine radical adsorbing step of supplying a chlorine containing gas that is activated onto a front surface of the substrate to cause the chlorine radical to be adsorbed entirely on the front surface of the substrate, a nitriding step of supplying a nitriding gas that is activated onto the substrate on which the chlorine radical adsorbs, causing the chlorine radical adsorbing on the flat surface, and nitride the flat surface from among the front surface of the substrate so as to form a silicon adsorption site, and a raw gas adsorbing step of supplying a raw gas that contains silicon and chlorine onto the substrate so as to cause the raw gas to adsorb onto the silicon adsorption site.Type: ApplicationFiled: November 21, 2018Publication date: June 6, 2019Inventors: Kazumi KUBO, Yutaka TAKAHASHI, Hitoshi KATO
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Publication number: 20190051513Abstract: A method for depositing a silicon nitride film is provided to fill a recessed pattern formed in a surface of a substrate. In the method, a first adsorption blocking region is formed by adsorbing first chlorine radicals such that an amount of adsorption increases upward from a bottom portion of the recessed pattern. A source gas that contains silicon and chlorine adsorbs on an adsorption site where the first adsorption site is not formed. A molecular layer of a silicon nitride film is deposited so as to have a V-shaped cross section. A second adsorption blocking region is formed by adsorbing second chlorine radicals on the molecular layer of the silicon nitride film. The molecular layer of the silicon nitride film is modified by nitriding the molecular layer while removing the second adsorption blocking region.Type: ApplicationFiled: August 7, 2018Publication date: February 14, 2019Inventors: Hitoshi KATO, Yutaka TAKAHASHI, Kazumi KUBO
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Publication number: 20190051511Abstract: A method for depositing a silicon nitride film is provided. In the method, an adsorption blocking region is formed such that a chlorine-containing gas conformally adsorbs on a surface of a substrate by adsorbing chlorine radicals on the surface of the substrate. A source gas that contains silicon and chlorine is adsorbed on the adsorption blocking region adsorbed on the surface of the substrate. A silicon nitride film is deposited on the surface of the substrate by supplying a nitriding gas activated by plasma to the source gas adsorbed on the surface of the substrate.Type: ApplicationFiled: August 7, 2018Publication date: February 14, 2019Inventors: Hitoshi KATO, Yutaka TAKAHASHI, Kazumi KUBO
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Publication number: 20190051512Abstract: A method for depositing a silicon nitride film is provided to fill a recessed pattern formed in a surface of a substrate with a silicon nitride film. In the method, a first silicon nitride film is deposited in the recessed pattern formed in the surface of the substrate. The first silicon nitride film has a V-shaped cross section decreasing its film thickness upward from a bottom portion of the recessed pattern. A second silicon nitride film conformal to a surface shape of the first silicon nitride film is deposited.Type: ApplicationFiled: August 7, 2018Publication date: February 14, 2019Inventors: Hitoshi KATO, Yutaka TAKAHASHI, Kazumi KUBO
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Publication number: 20170278699Abstract: Disclosed is a control device that controls an operation of a substrate processing apparatus. The control device includes a recipe memory unit that stores a film formation condition according to a type of the film, a model memory unit that stores a process model that represents an effect of the film formation condition on a property of the film, a log memory unit that stores an actual measurement value of the film formation condition during film formation, and a controller that calculates a film formation condition that satisfies a target property of the film based on a measured result of the property of the film formed based on the film formation condition stored in the recipe memory unit, the process model stored in the model memory unit, and the actual measurement value of the film formation condition stored in the log memory unit.Type: ApplicationFiled: March 22, 2017Publication date: September 28, 2017Inventors: Takahito Kasai, Yuichi Takenaga, Kazumi Kubo
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Patent number: 8518834Abstract: A method for forming an oxide film on a carbon film includes the steps of forming a carbon film on an object to be processed; forming an object-to-be-oxidized layer on the carbon film; and forming an oxide film on the object-to-be-oxidized layer while oxidizing the object-to-be-oxidized layer.Type: GrantFiled: December 27, 2011Date of Patent: August 27, 2013Assignee: Tokyo Electron LimitedInventors: Akinobu Kakimoto, Atsushi Endo, Kazumi Kubo
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Publication number: 20120164844Abstract: A method for forming an oxide film on a carbon film includes the steps of forming a carbon film on an object to be processed; forming an object-to-be-oxidized layer on the carbon film; and forming an oxide film on the object-to-be-oxidized layer while oxidizing the object-to-be-oxidized layer.Type: ApplicationFiled: December 27, 2011Publication date: June 28, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Akinobu KAKIMOTO, Atsushi ENDO, Kazumi KUBO
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Publication number: 20120015525Abstract: A method of cleaning a thin film forming apparatus, for removing deposits adhering to an inside thereof after supplying a film-forming gas into a reaction chamber to form a amorphous carbon film on a workpiece, includes a heating operation of heating at least one of an inside of the reaction chamber and an inside of an exhaust pipe connected to the reaction chamber to a predetermined temperature; and a removing operation of supplying a cleaning gas containing oxygen gas and hydrogen gas into at least one of the inside of the reaction chamber and the inside of the exhaust pipe heated in the heating operation, heating the cleaning gas to the predetermined temperature to activate the oxygen gas and the hydrogen gas contained in the cleaning gas, and thereafter removing the deposits adhering to the inside of the thin film forming apparatus by the oxygen gas and the hydrogen gas activated.Type: ApplicationFiled: July 15, 2011Publication date: January 19, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Atsushi ENDO, Kazumi KUBO, Satoshi MIZUNAGA
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Patent number: 7696106Abstract: A film formation method for a semiconductor process includes placing a plurality of target objects at intervals in a vertical direction inside a process container of a film formation apparatus. Then, the method includes setting the process container to have a first vacuum state therein, and supplying a first film formation gas containing a hydrocarbon gas into the process container, thereby forming a carbon film by CVD on the target objects. Then, the method includes setting the process container to have a second vacuum state therein, while maintaining the process container to have a vacuum state therein from the first vacuum state, and supplying a second film formation gas containing an organic silicon source gas into the process container, thereby forming an Si-containing inorganic film by CVD on the carbon film.Type: GrantFiled: July 9, 2008Date of Patent: April 13, 2010Assignee: Tokyo Electron LimitedInventors: Mitsuhiro Okada, Kazumi Kubo