Patents by Inventor Kazumi Kurooka

Kazumi Kurooka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Solid electrolytic capacitor and method of manufacturing solid electrolytic capacitor
    Publication number: 20070188981
    Abstract: A solid electrolytic capacitor includes an anode and a dielectric layer. The anode is made of niobium or a niobium alloy. The dielectric layer is made of niobium oxide formed on the niobium or the niobium alloy. The niobium oxide has a feature that a full width at half maximum of a peak of an Mz ray of characteristic X-rays of niobium is 0.98 ? or more. The characteristic X-rays are emitted when the niobium oxide is irradiated with an electron beam.
    Type: Application
    Filed: February 27, 2007
    Publication date: August 16, 2007
    Applicant: SANYO ELECTRIC CO., LTD.
    Inventors: Kazuhiro Takatani, Kazumi Kurooka, Tomoko Omori, Mutsumi Yano, Takashi Umemoto, Hiroshi Nonoue
  • Laser transceiver system controller
    Patent number: 6479349
    Abstract: To provide a method for fabricating a nonvolatile semiconductor memory device in which the occurrence of a trap site formed in a tunnel oxide film can be suppressed so that W/E cycle of a memory cell transistor can be improved. A tunnel oxide film formed between a floating gate 13 and a control gate is constituted by at least one CVD oxide film formed through chemical vapor-phase growth by a low pressure CVD method, and there is provided a step of heating the CVD oxide film in a nitriding atmosphere containing N2O, NO or NH3.
    Type: Grant
    Filed: August 11, 2000
    Date of Patent: November 12, 2002
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Toshiharu Oya, Kazumi Kurooka
  • Method for manufacturing a split game type transistor
    Patent number: 6184088
    Abstract: A method for manufacturing a split gate type transistors includes the steps of: forming a semiconductor substrate; forming a floating gate electrode over the semiconductor substrate, the floating gate electrode having at least one lateral face portion; and nitrating the at least one lateral face portion to form a nitrogen-containing layer.
    Type: Grant
    Filed: February 25, 1999
    Date of Patent: February 6, 2001
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Kazumi Kurooka, Kenji Fukase
  • Split gate type transistor memory device
    Patent number: 5936883
    Abstract: Split gate type transistor made by the steps of: forming a semiconductor substrate; forming a floating gate electrode over the semiconductor substrates the floating gate electrode having at least one lateral face portion; and nitrating the at least one lateral face portion to form a nitrogen-containing layer.
    Type: Grant
    Filed: March 27, 1997
    Date of Patent: August 10, 1999
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Kazumi Kurooka, Kenji Fukase