Abstract: A probe needle is successively moved to a plurality of measurement points set in a measurement region on a sample so as to measure a z-displacement amount. An excitation control unit feedback-controls a piezoelectric element so that a vibration amplitude of a cantilever is constant in accordance with the detection output by a displacement detection unit. Moreover, a vertical displacement control unit feedback-controls a vertical position scan unit so as to obtain a constant distance between the probe needle and the sample according to a frequency shift by a frequency detection unit. When changes of outputs of two feedback loops at a certain measurement point are both within a predetermined range, a main control unit issues an instruction to a horizontal position control unit to rapidly move to the next measurement point. As a result, it is possible to adaptively decide such a measurement time that both of the two feedback controls at respective measurement points are established.

Abstract: Above a sample (9) having magnetic domains, a distribution of magnetic force in a measurement plane (91) is obtained as a magnetic force image using a MFM, an auxiliary magnetic force image is obtained by performing measurement in a measurement plane (92) away from the measurement plane (91) by a distance d, and a difference between them is divided by the distance d to obtain a magnetic force gradient image. The magnetic force image and the auxiliary magnetic force image are Fourier transformed and substituted into a three-dimensional field obtaining equation derived from a general solution of the Laplace equation, and the three-dimensional field indicating the magnetic force is obtained. A state of the magnetic domains at the surface (93) of the sample (9) can be obtained with high accuracy by obtaining the three-dimensional field.

Abstract: Incident light 19 emitted from a laser light source 18 is reflected on an upper surface of a cantilever 13, so that reflected light 19a enters light detection means 20. Since the incident light 19 and the reflected light 19a are in a plane not including a long axis of the cantilever 13, movements of the reflected light 19a due to change in a deflection amount ? of the cantilever 13 and due to change in a fine vertical movement amount z thereof are different in direction on the light detection means 20. This enables the change in the deflection amount ? of the cantilever 13 and the change in the fine vertical movement amount z thereof to be separated from output of the light detection means 20.

Abstract: A probe needle is successively moved to a plurality of measurement points set in a measurement region on a sample so as to measure a z-displacement amount. An excitation control unit feedback-controls a piezoelectric element so that a vibration amplitude of a cantilever is constant in accordance with the detection output by a displacement detection unit. Moreover, a vertical displacement control unit feedback-controls a vertical position scan unit so as to obtain a constant distance between the probe needle and the sample according to a frequency shift by a frequency detection unit. When changes of outputs of two feedback loops at a certain measurement point are both within a predetermined range, a main control unit issues an instruction to a horizontal position control unit to rapidly move to the next measurement point. As a result, it is possible to adaptively decide such a measurement time that both of the two feedback controls at respective measurement points are established.

Abstract: Incident light 19 emitted from a laser light source 18 is reflected on an upper surface of a cantilever 13, so that reflected light 19a enters light detection means 20. Since the incident light 19 and the reflected light 19a are in a plane not including a long axis of the cantilever 13, movements of the reflected light 19a due to change in a deflection amount ? of the cantilever 13 and due to change in a fine vertical movement amount z thereof are different in direction on the light detection means 20. This enables the change in the deflection amount ? of the cantilever 13 and the change in the fine vertical movement amount z thereof to be separated from output of the light detection means 20.

Abstract: A method for measuring surface properties according to the present invention includes the steps of: with distance control feedback applied so that a desired physical quantity to be measured that is attributed to an interaction between a probe and a sample is actually measured while changing a measured distance between the probe and the sample in accordance with a relationship between the desired physical quantity and the measured distance, (i) setting a set value, corresponding to the desired physical quantity, which serves to change the measured distance; and (ii) recording, for each set value thus set, a relationship between the measured distance changed by the set value set in the step (i) and a physical quantity measured with the probe and the sample placed at that measured distance. This allows precise and quick measurement of a physical quantity even in a region where the probe and the sample are very close to each other, while avoiding a collision between them.

Abstract: An electron beam irradiation device of the present invention includes: a projector 8 for generating a two-dimensional light pattern 13; a microchannel plate 11 for (i) generating an electron beam array based on the light pattern 13 having entered, (ii) amplifying the electron beam array, and (iii) emitting the electron beam array as an amplified electron beam array 14; and an electron beam lens section 12 for converging the amplified electron beam array 14. This electron beam irradiation device is capable of manufacturing a semiconductor device whose performance is improved through a finer processing by means of irradiation using an electron beam. Further, the electron beam irradiation device allows cost reduction, because the device allows collective irradiation using a two dimensional pattern.

Abstract: Above the sample (9) having magnetic domains, a distribution of magnetic force in a measurement plane (91) is obtained as a magnetic force image with use of a MFM, an auxiliary magnetic force image is obtained by performing measurement in a measurement plane (92) away from the measurement plane (91) by a minute distance d, and a difference between them is divided by the minute distance d to obtain a magnetic force gradient image. The magnetic force image and the auxiliary magnetic force image are Fourier transformed and substituted into a three-dimensional field obtaining equation derived from a general solution of the Laplace equation, and the three-dimensional field indicating the magnetic force is obtained with high accuracy. A state of the magnetic domains at the surface (93) of the sample (9) can be obtained with high accuracy by obtaining the three-dimensional field.

Abstract: An electron beam irradiation device of the present invention includes: a projector 8 for generating a two-dimensional light pattern 13; a microchannel plate 11 for (i) generating an electron beam array based on the light pattern 13 having entered, (ii) amplifying the electron beam array, and (iii) emitting the electron beam array as an amplified electron beam array 14; and an electron beam lens section 12 for converging the amplified electron beam array 14. This electron beam irradiation device is capable of manufacturing a semiconductor device whose performance is improved through a finer processing by means of irradiation using an electron beam. Further, the electron beam irradiation device allows cost reduction, because the device allows collective irradiation using a two dimensional pattern.

Abstract: There is provided a pyroelectric infrared sensor being capable of changing its shape and having high sensitivity. The sensor comprises the substrate 11 made of a polymer material such as polyimide or polyethylene terephthalate and having flexibility, the layer 13 comprising vinylidene fluoride (VDF), and the flexible electrodes 12 and 14 comprising an Al-deposited film and provided on and under the VDF oligomer layer 13. The pyroelectric infrared sensor of the present invention has flexibility as a whole due to flexibility of each component elements and can be formed into desired shapes. In addition, since a substrate made of a polymer material has heat capacity and heat conductivity lower than those of Si substrates used on conventional pyroelectric infrared sensors, sensitivity of the sensor can be increased.

Abstract: A molecular device of the present invention is arranged so that a self-organizing monomolecular layer is formed on an oxide layer made of an oxide of a substrate by being chemically bonded with the surface of the oxide layer, and nano structures are formed on the monomolecular film. With this arrangement, the present invention provides a molecular device which causes less interaction between the substrate and nanostructures arranged on the substrate, thereby realizing easier control of orientation of nano structures on the substrate. The present invention also provides a manufacturing method of the molecular device.

Abstract: A totally new method for manufacturing a thin film wherein only an arbitrary small region is structurally controlled. The structure of a film is controlled by applying a force to the entire film or an arbitrary region of the film using a part having a sharp tip during the film-forming process or after finishing the film formation. At this time, the temperature of the film is set at the glass transition point of the amorphous region or higher. An atomic force microscope can be used as an apparatus for realizing this manufacturing method.

Abstract: A method of detecting the distribution of values of a physical property such as the dopant concentration of a semiconductor without being adversely affected by stray capacitance is offered. A scanning probe microscope capable of implementing this method is also offered. The method starts with applying an AC voltage of angular frequency &ohgr; between a probe and a sample from a fixed oscillator. The output from the oscillator is supplied to a piezoelectric device that drives the cantilever. The cantilever produces a deflection signal corresponding to forces corresponding to interactions between the probe and sample. A signal regarding the amplitude is extracted from the deflection signal. This signal is fed back to a means for controlling the distance between the probe and sample and supplied to a display device. As a result, an image of the surface topography of the sample is obtained.

Abstract: There are provided a method of soldering a lead-free solder which lowers a melting point of the lead-free solder and prevents deterioration of a joining strength at a portion joined by the lead-free solder, and a joined object soldered with the use of the soldering method. The lead-free solder as an alloy of tin with no lead contained is melted, and ultrasonic vibration is acted at least either to the join object to be joined by the lead-free solder or to the lead-free solder when the molten lead-free solder is solidified. Therefore crystals of contained components in the lead-free solder are made fine and the contained components are prevented from being segregated at a joining interface of the joined object, so that the joining strength at the joining interface can be increased.

Abstract: There are provided a method of soldering a lead-free solder which lowers a melting point of the lead-free solder and prevents deterioration of a joining strength at a portion joined by the lead-free solder, and a joined object soldered with the use of the soldering method. The lead-free solder as an alloy of tin with no lead contained is melted, and ultrasonic vibration is acted at least either to the join object to be joined by the lead-free solder or to the lead-free solder when the molten lead-free solder is solidified. Therefore crystals of contained components in the lead-free solder are made fine and the contained components are prevented from being segregated at a joining interface of the joined object, so that the joining strength at the joining interface can be increased.