Abstract: A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing a fluorinated norbornane group, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.

Abstract: A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing a norbornane group having hexafluoroisopropyl alcohol, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.

Abstract: A resist composition is provided comprising a polysiloxane, a specific acid generator, a nitrogen-containing organic compound, and a solvent. The resist composition exerts high-resolution performance without the problem of a T-top profile and is suited for the bilayer resist process using ArF exposure.

Abstract: A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing an organic group having a hydroxyl group and having at least 3 fluorine atoms, in total, on a proximate carbon atom, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.

Abstract: Chemically amplified resist compositions comprising nitrogen-containing organic compounds having a 7-oxanorbornane-2-carboxylic ester structure have an excellent resolution and provide a precise pattern profile and are useful in microfabrication using electron beams or deep-UV light.

Abstract: A photo-curable resin composition comprising (A) an organosiloxane-bearing polymer comprising recurring units of formula (1): wherein R1 to R4 are monovalent C1-C8 hydrocarbon, n is an integer of 1-1,000, and X is and having a Mw of 500-200,000, (B) a formalin-modified or formalin-alcohol-modified amino condensate, a phenol compound having on the average at least two methylol or alkoxymethylol radicals, or an epoxy compound having on the average at least two epoxy radicals, (C) a photoacid generator, and (D) a silicon compound of the formula: (R11)mSi(OR12)4?m wherein R11 is monovalent C1-C9 hydrocarbon, R12 is C1-C4 alkyl, m is 0-2, forms cured pattern films having dry etch resistance and improved adhesion to substrates.

Abstract: Chemically amplified resist compositions comprising nitrogen-containing organic compounds having an aromatic carboxylic acid ester structure have an excellent resolution and provide a precise pattern profile and are useful in microfabrication using electron beams or deep-UV light.

Abstract: Provided is a silicon-containing positive photoresist which exhibits high resolution capacity when exposed to radiation having a wavelength of 300 nm or less, especially KrF (248 nm) or ArF (193 nm), which has excellent dry etching resistance and which can be developed with an aqueous alkali solution. Provided is a radiation sensitive polymer composition comprising (A) a polysiloxane compound which comprises at least one structural unit represented by formula (1) having an acid-dissociable group, and at least one structural unit represented by formula (2) comprising at least one fluorine atom; which is alkali insoluble or alkali sparingly soluble but becomes alkali soluble when the acid-dissociable group dissociates; and which has an average fluorine atom content of more than 2 wt % but not more than 11 wt %; (B) an acid generator; and (C) a basic compound.

Abstract: Provided is a positive resist material, particularly a chemically amplified positive resist material having higher sensitivity, higher resolution, a higher exposure latitude and better process adaptability than conventional positive resist materials, and providing a good pattern profile after exposure, particularly having lessened line edge roughness and exhibiting excellent etching resistance. These materials may contain, preferably an organic solvent and acid generator, more preferably a dissolution inhibitor or a basic compound and/or a surfactant. Provided is a positive resist material comprising a polymer comprising at least one monomer unit selected from a group consisting of a monomer unit (A), a monomer unit (B) and a monomer unit (C) represented by the following formula (1); and having a glass transition temperature (Tg) of 100° C. or greater.

Abstract: A photo-curable resin composition comprising (A) an organosiloxane-bearing polymer comprising recurring units of formula (1): 1

Abstract: A single layer lift-off resist composition comprising a novolac resin, a quinonediazidosulfonate photosensitive agent, and an aromatic hydroxy compound having at least one phenolic hydroxyl group in which the phenolic hydroxyl group is partially acylated is improved in adhesion to a substrate.

Abstract: A single layer lift-off resist composition comprising a novolac resin, a quinonediazidosulfonate photosensitive agent, and an aromatic hydroxy compound having at least one phenolic hydroxyl group in which the phenolic hydroxyl group is partially acylated is improved in adhesion to a substrate.

Abstract: A polysilane containing insoluble matter and microgel as impurities is purified by dissolving the polysilane in a good solvent to form a polysilane solution, adding a poor solvent to the polysilane solution for causing a minor amount of high molecular weight component to precipitate, thereby agglomerating the insoluble matter and microgel, and removing the resulting agglomerate by filtration. The purifying method of the invention can readily remove the insolubles from the starting polysilane within a short time. A pure polysilane which can form a transparent smooth film is obtainable with commercial advantages.

Abstract: A semi-openable document presser for an image forming apparatus includes a main member and an auxiliary member in which the main member is pivotably mounted on the image forming apparatus. A biasing pivotal coupler is disposed between the main and auxiliary members, the coupler providing a biasing force which biasingly disposes the main and auxiliary members in a non-actuated position in which the main and auxiliary members are in a generally planar relationship. The document presser is operable to the actuated by an operator to overcome the biasing force to dispose the main and auxiliary members in an actuated position which disposes the main and auxiliary members in a non-planar relationship.