Patents by Inventor Kazumi Sasaki

Kazumi Sasaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having an electrode and a method of manufacturing the same
    Patent number: 4809055
    Abstract: An SiO.sub.2 insulating layer is formed on an Si substrate, and an Si.sub.3 N.sub.4 insulating layer is formed on the SiO.sub.2 layer. A notch is formed in the Si.sub.3 N.sub.4 layer using a resist film as a mask. The SiO.sub.2 layer is etched using the Si.sub.3 N.sub.4 layer as a mask, thereby forming an opening larger than the notch cut in the SiO.sub.2 layer. As a result, the Si.sub.3 N.sub.4 layer extends over the opening in an overhanging manner. When As.sup.+ ions are implanted in the periphery of the notch of the Si.sub.3 N.sub.4 layer, the ion-implanted portion of the Si.sub.3 N.sub.4 layer is arcuated toward the base region. When a metal such as Ti is deposited on the arcuated portion, the metal is also deposited on the arcuated portion and the portion of the emitter region matching with the notch, thereby forming an emitter electrode portion.
    Type: Grant
    Filed: May 5, 1988
    Date of Patent: February 28, 1989
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masaru Ishibashi, Takeshi Tsubata, Kazumi Sasaki