Abstract: A fuel injection control system in which an appropriate command is obtained both before and after learning a correction amount. Command storage means 3 stores a command for pre-learning and a command for post-learning; the command for pre-learning is a command for a pre-learning time, which is a time before correction amount learning means 5 learns a correction amount, and a command for post-learning for a post-learning time, which is a time after the correction amount learning means 5 learns a correction amount; command injection amount determination means 4 refers to the command for pre-learning at the pre-learning time, and refers to the command for post-learning at the post-learning time.

Abstract: A fuel injection amount learning and controlling method capable of learning the amount of fuel injection independent of whether accessories are operated or not and without being affected by environmental conditions such as coolant temperature. The fuel injection amount learning and controlling method obtains, using an idle injection amount standard value as the standard, a fuel injection amount learning value so that the speed of an internal combustion engine (1) is a target idle speed. The method has a learning correction function that obtains in advance a relationship between load by accessories (3, 4) driven by the engine (1) and a fuel injection incremental amount that is due to the load imposed by the accessories (3, 4) and is relative to a no-load condition as the standard.

Abstract: A fuel injection control system in which an appropriate command is obtained both before and after learning a correction amount. Command storage means 3 stores a command for pre-learning and a command for post-learning; the command for pre-learning is a command for a pre-learning time, which is a time before correction amount learning means 5 learns a correction amount, and a command for post-learning for a post-learning time, which is a time after the correction amount learning means 5 learns a correction amount; command injection amount determination means 4 refers to the command for pre-learning at the pre-learning time, and refers to the command for post-learning at the post-learning time.

Abstract: A fuel injection amount learning and controlling method capable of learning the amount of fuel injection independent of whether accessories are operated or not and without being affected by environmental conditions such as coolant temperature. The fuel injection amount learning and controlling method obtains, using an idle injection amount standard value as the standard, a fuel injection amount learning valve so that the speed of an internal combustion engine (1) is a target idle speed. The method has a learning correction function that obtains in advance a relationship between load by accessories (3, 4) driven by the engine (1) and a fuel injection incremental amount that is due to the load imposed by the accessories (3, 4) and is relative to a no-load condition as the standard.

Abstract: An estimated quantity of soot deposited near a movable part of a variable capacity mechanism and an estimated quantity of soot burnt off therefrom are determined in advance in accordance with values of parameters (engine rotation speed or similar) that express the engine operating condition, and stored in storage means. Then actual values of the parameter are measured, and an estimated deposition quantity Sa and an estimated burn off quantity Sb corresponding to the measured values are determined from the storage means. An estimated remaining quantity of soot Kn is determined by obtaining the difference between the estimated deposition quantity and the estimated burn off quantity, and a movable vane is forcibly driven to open and close in accordance with the estimated remaining quantity Kn.

Abstract: An estimated quantity of soot deposited near a movable part of a variable capacity mechanism and an estimated quantity of soot burnt off therefrom are determined in advance in accordance with values of parameters (engine rotation speed or similar) that express the engine operating condition, and stored in storage means. Then actual values of the parameter are measured, and an estimated deposition quantity Sa and an estimated burn off quantity Sb corresponding to the measured values are determined from the storage means. An estimated remaining quantity of soot Kn is determined by obtaining the difference between the estimated deposition quantity and the estimated burn off quantity, and a movable vane is forcibly driven to open and close in accordance with the estimated remaining quantity Kn.

Abstract: An n− type layer 12 is epitaxially grown on one main surface (front surface) of an n+ type silicon substrate 11 and an anode electrode 13 is electrically in contact with the other main surface (rear surface) thereof. A p type region 14 is selectively formed in a surface layer of the n− type layer 12 and a n+ type region 15 is selectively formed in a surface layer of the p type region 14. A cathode electrode 17 is electrically in contact with a surface of the n+ type region 15.

Abstract: An n− type layer 12 is epitaxially grown on one main surface (front surface) of an n+ type silicon substrate 11 and an anode electrode 13 is electrically in contact with the other main surface (rear surface) thereof. A p type region 14 is selectively formed in a surface layer of the n− type layer 12 and a n+ type region 15 is selectively formed in a surface layer of the p type region 14. A cathode electrode 17 is electrically in contact with a surface of the n+ type region 15.

Abstract: A semiconductor device has a vertical MOS FET and a trigger element connected between the drain and the gate of the MOS FET. The trigger element has a heavily doped n region, a lightly doped p region and a lightly doped n region. The trigger element has a breakdown voltage lower than the drain-to-source rated voltage of the MOS FET and exhibits a negative resistance characteristic. A surge voltage enterring the drain of the MOS FET raises the gate potential of the MOS FET by flowing through the trigger element to thereby trigger the source-drain path of the MOS FET. The negative resistance characteristic of the trigger element enables to lower the temperature rise of the MOS FET to thereby protect the MOS FET against thermal destruction. A bidirectional diode set may be connected in series to the trigger element to design various breakdown voltage of the protective path.

Abstract: The invention has the object of realizing a semiconductor device in which the various problems brought about by parasitic diodes in configuring a circuit are prevented, the semiconductor device being provided with first and second insulated-gate field-effect transistors, and being configured such that the source regions of the first and second insulation gate field-effect transistors are electrically connected, the back gate region, which in part constitutes a channel, and the source region of the first insulated-gate field-effect transistor are electrically connected, and the back gate region of the second insulated-gate field-effect transistor is electrically connected to the drain region of the first insulated-gate field-effect transistor.

Abstract: A two-way conductive directional circuit formed in a polycrystalline silicon layer separated by an insulation film from a semiconductive element is one-way biased for sensing a temperature of the semiconductive element. The directional circuit may be provided with a bias in either conductive direction thereof for sensing a temperature of the semiconductive element, before being provided with a bias in the other conductive direction thereof for sensing the temperature of the semiconductive element.