Abstract: A positive type resist composition capable of forming a pattern shape suitable for lift-off is provided. A positive type resist composition comprising (A) a certain polymer, (B) an acid generator having an imide group, (C) a dissolution rate modifier and (D) a solvent.

Abstract: [Problem] To provide a chemically amplified positive type photoresist composition capable of forming a pattern having an excellent cross-sectional shape, and a pattern forming method using the same. [Means for Solution] A chemically amplified positive type photoresist composition comprising (A) a polymer which reacts with an acid to increase its solubility in an alkaline aqueous solution, (B) an organic solvent, (C) a first photo acid generator containing a cation having no polar group, and (D) a second photoacid generator containing a cation having a polar group, and a pattern forming method using the same.

Abstract: The present invention relates to a photosensitive resin composition suitable for forming a thick film, which comprises (A) an alkali-soluble resin, (B) at least one plasticizer selected from a group consisting of an alkali-soluble vinyl resin and an acid-dissociable group containing vinyl resin, (C) an acid generator, and (D) an organic solvent.

Abstract: [Problem] To provide a chemically amplified positive type photoresist composition capable of forming a pattern having an excellent cross-sectional shape, and a pattern forming method using the same. [Means for Solution] A chemically amplified positive type photoresist composition comprising (A) a polymer which reacts with an acid to increase its solubility in an alkaline aqueous solution, (B) an organic solvent, (C) a first photo acid generator containing a cation having no polar group, and (D) a second photoacid generator containing a cation having a polar group, and a pattern forming method using the same.

Abstract: The present invention relates to a photosensitive resin composition suitable for forming a thick film, which comprises (A) an alkali-soluble resin, (B) at least one plasticizer selected from a group consisting of an alkali-soluble vinyl resin and an acid-dissociable group containing vinyl resin, (C) an acid generator, and (D) an organic solvent.

Abstract: The present invention provides a fine pattern-forming composition and a fine pattern-forming method. This fine pattern-forming composition enables a pattern of high aspect ratio to be made finer than a limit of resolution determined by the wavelength of light for exposure. The composition contains a water-soluble resin and a water-containing solvent, and has a kinetic viscosity ? at 25° C. in the range of 10 to 35 mm2/s and a solid content C satisfying the condition that the ratio ?/C of the kinetic viscosity ? to the solid content C is in the range of 0.5 to 1.5 mm2/s/wt %. By use of this composition, a resist pattern having an aspect ratio of 4 to 15 or having a thickness of 2 ?m or more can be further miniaturized.

Abstract: [Object] To provide a chemically amplified photosensitive resin composition suitable for forming a thick film and a super thick film, which has high sensitivity, high film residual properties, good coating properties, high resolution and a good pattern shape, and which gives a pattern excellent in heat resistance, in a photosensitive resin composition requiring the formation of a thick resist pattern film such as in the formation of a magnetic pole of a magnetic head or of a bump. [Solving means] A chemically amplified photosensitive resin composition including an alkali soluble novolak resin (A), a resin or compound (B) which in itself is insoluble or slightly soluble in alkali, but becomes soluble in alkali by the action of an acid, that is acid generating agent (C), and a photosensitizing agent (D) containing a quinonediazide group, as well as, if necessary, an alkali soluble acrylic resin (E) and a crosslinking agent (F) for improving film quality.