Abstract: An electrostatic operation device in which a variation in the amount of electric charges accumulated in an electret film caused by physical impact can be suppressed. The electrostatic operation device (electrostatic induction power generating device (1)) comprises movable electrodes (8), an electret film (5) so formed as to face the movable electrodes (8) at a space therebetween, and a stopper (401b) for suppressing the approach of the movable electrodes (8) to the electret film (5) within a predetermined space.

Abstract: An electrostatic operation device in which a variation in the amount of electric charges accumulated in an electret film caused by physical impact can be suppressed. The electrostatic operation device (electrostatic induction power generating device (1)) comprises movable electrodes (8), an electret film (5) so formed as to face the movable electrodes (8) at a space therebetween, and a stopper (401b) for suppressing the approach of the movable electrodes (8) to the electret film (5) within a predetermined space.

Abstract: A linear motor capable of attaining thinning is obtained. This linear motor (100) includes a spiral coil (141, 142, 441, 442); and a movable portion (120, 220), including a first pole face (121a) having a first polarity and a second pole face (122a) having a second polarity different from the first polarity on a surface opposed to the spiral coil, provided to be movable in a direction along the surface of the spiral coil.

Abstract: A linear motor whose thickness can be reduced is obtained. This linear motor (100) includes a spiral coil (141), wherein the spiral coil has a first section (141a, 141b) and a second section (141c, 141d) and is so formed that the magnitude of a magnetic flux of a magnetic field generated by current flowing in the first section is larger than the magnitude of a magnetic flux of a magnetic field generated by current flowing in the second section.

Abstract: An electrostatic operation device in which a variation in the amount of electric charges accumulated in an electret film caused by physical impact can be suppressed. The electrostatic operation device (electrostatic induction power generating device (1)) comprises movable electrodes (8), an electret film (5) so formed as to face the movable electrodes (8) at a space therebetween, and a stopper (401b) for suppressing the approach of the movable electrodes (8) to the electret film (5) within a predetermined space.

Abstract: An electric device enabling the user to visually judge the section of present and amount of a substance absorbing or reflecting ultraviolet radiation. The electric device comprises an image detecting portion (6, 66, 127, 149) for receiving ultraviolet radiation and detecting an image from the received ultraviolet radiation and a display section (2, 32, 42, 52, 62, 82, 92, 102, 126, 147, 172) for displaying ultraviolet radiation information created from the image formed by the detected ultraviolet radiation by the image detecting portion.

Abstract: An electric power generator capable of using external vibrations in various directions to generate power. A fixed substrate having a surface with a plurality of electret electrodes and a movable substrate having a surface with a movable electrode are spaced from each other. The fixed substrate is fixed in the electric power generator. Spring driving bodies support the movable substrate so that the movable substrate elastically moves in any direction within an XY plane when receiving external vibrations.

Abstract: This energy converter includes a first flat coil and a magnet opposed to the first flat coil at an interval, and the first flat coil and the magnet are so formed as to be relatively movable, for converting kinetic energy to electric energy by electromagnetic induction.

Abstract: An electric power generator capable of using external vibrations in various directions to generate power. A fixed substrate having a surface with a plurality of electret electrodes and a movable substrate having a surface with a movable electrode are spaced from each other. The fixed substrate is fixed in the electric power generator. Spring driving bodies support the movable substrate so that the movable substrate elastically moves in any direction within an XY plane when receiving external vibrations.

Abstract: A method of fabricating a memory capable of improving the strength of a signal read from a memory cell is provided. This method of fabricating a memory comprises steps of forming a storage part and an etched thin-film part by partially etching a storage material film formed on a first electrode film by a prescribed thickness, forming an insulator film to cover at least the thin-film part of the storage material film and patterning the insulator film and the thin-film part of the storage material film by forming an etching mask on a prescribed region of the insulator film and thereafter etching the insulator film and the thin-film part of the storage material film through the etching mask.

Abstract: A dielectric device having excellent characteristics is provided. This dielectric device comprises such a first electrode layer that constituent elements located on its surface are terminated by halogen atoms and a dielectric film formed on the surface of the first electrode layer terminated by the halogen atoms. When the constituent elements for the first electrode layer located on the surface thereof are terminated by the halogen atoms in order to form a ferroelectric film having a bismuth layer structure, therefore, Bi constituting the ferroelectric film is inhibited from bonding to the constituent elements located on the surface of the first electrode layer.

Abstract: A method of fabricating a memory capable of improving the strength of a signal read from a memory cell is provided. This method of fabricating a memory comprises steps of forming a storage part and an etched thin-film part by partially etching a storage material film formed on a first electrode film by a prescribed thickness, forming an insulator film to cover at least the thin-film part of the storage material film and patterning the insulator film and the thin-film part of the storage material film by forming an etching mask on a prescribed region of the insulator film and thereafter etching the insulator film and the thin-film part of the storage material film through the etching mask.

Abstract: A memory includes a first electrode film, a storage material film formed on the first electrode film, provided with a storage part and a thin-film part having a thickness smaller than a thickness of the storage part and which is at least about 15% of the thickness of the storage part on average, a second electrode film formed on the storage part of the storage material film. The thickness of the thin-film part may be between 15% and 95% of the thickness of the storage part. An insulator film may be formed on the thin-film part and the second electrode part, the insulator film formed on the thin-film part having a same pattern as the thin-film part.

Abstract: A dielectric element capable of effectively suppressing diffusion of oxygen into a region located under a lower electrode in heat treatment for sintering an oxide-based dielectric film is obtained. This dielectric element comprises a lower electrode including a first conductor film having a function of suppressing diffusion of oxygen, a first dielectric film, formed on the lower electrode, including an oxide-based dielectric film, and a first insulator film, arranged on a region other than the lower electrode, having a function of suppressing diffusion of oxygen. Thus, the first conductor film and the first insulator film function as barrier films preventing diffusion of oxygen, whereby the first conductor film effectively prevents oxygen from diffusing downward along grain boundaries of the lower electrode while the first insulator film effectively prevents oxygen from diffusing downward from the region other than the lower electrode in heat treatment for sintering the oxide-based dielectric film.

Abstract: A method of fabricating a memory capable of improving the strength of a signal read from a memory cell is provided. This method of fabricating a memory comprises steps of forming a storage part and an etched thin-film part by partially etching a storage material film formed on a first electrode film by a prescribed thickness, forming an insulator film to cover at least the thin-film part of the storage material film and patterning the insulator film and the thin-film part of the storage material film by forming an etching mask on a prescribed region of the insulator film and thereafter etching the insulator film and the thin-film part of the storage material film through the etching mask.

Abstract: A dielectric device having excellent characteristics is provided. This dielectric device comprises such a first electrode layer that constituent elements located on its surface are terminated by halogen atoms and a dielectric film formed on the surface of the first electrode layer terminated by the halogen atoms. When the constituent elements for the first electrode layer located on the surface thereof are terminated by the halogen atoms in order to form a ferroelectric film having a bismuth layer structure, therefore, Bi constituting the ferroelectric film is inhibited from bonding to the constituent elements located on the surface of the first electrode layer.

Abstract: A dielectric element capable of effectively suppressing diffusion of oxygen into a region located under a lower electrode in heat treatment for sintering an oxide-based dielectric film is obtained. This dielectric element comprises a lower electrode including a first conductor film having a function of suppressing diffusion of oxygen, a first dielectric film, formed on the lower electrode, including an oxide-based dielectric film, and a first insulator film, arranged on a region other than the lower electrode, having a function of suppressing diffusion of oxygen. Thus, the first conductor film and the first insulator film function as barrier films preventing diffusion of oxygen, whereby the first conductor film effectively prevents oxygen from diffusing downward along grain boundaries of the lower electrode while the first insulator film effectively prevents oxygen from diffusing downward from the region other than the lower electrode in heat treatment for sintering the oxide-based dielectric film.

Abstract: A semiconductor device capable of implementing a multilevel interconnection structure employing a tungsten plug after formation of a capacitor element including an oxide-based dielectric film by suppressing downward diffusion of hydrogen is obtained. This semiconductor device comprises a first interlayer dielectric film having a first opening, a first barrier film, formed at least along the inner side surface of the first opening, having a function of preventing diffusion of hydrogen, and a first conductive material embedded in the first opening through the first barrier film. Thus, the first barrier film functions as a barrier film preventing diffusion of hydrogen. Also when the tungsten plug is formed after formation of the capacitor element including the oxide-based dielectric film, therefore, the first barrier film can prevent hydrogen from diffusing into the oxide-based dielectric film.

Abstract: Disclosed is a semiconductor memory device which has stack type memory cells each comprising one MIS transistor and one MIS capacitor. A first conductive film having a predetermined thickness is arranged to overlay a memory node contact of a memory cell which corresponds to a source or drain region of the MIS transistor. A second conductive film is formed on the surface of the first conductive film to have a predetermined thickness and come in contact with the source or drain region by means of a memory node contact hole formed inside the memory node contact. The first and second conductive films form a capacitor electrode of the MIS capacitor.