Patents by Inventor Kazunobu Ota
Kazunobu Ota has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11791368Abstract: Image quality is improved. In an image pickup element, an interval between adjacent light receiving elements on a light receiving surface is changed depending on a position on the light receiving surface. Further, the image pickup element is manufactured by a method of manufacturing the image pickup element including layering photodiodes by repeatedly performing a silicon epitaxial process and an ion injection process. Further, the image pickup element is manufactured by the method of manufacturing the image pickup element including changing an interval between the photodiodes adjacent on the light receiving surface of the image pickup element in each layer depending on a position on the light receiving surface in addition to the layering thereof.Type: GrantFiled: June 22, 2020Date of Patent: October 17, 2023Assignee: Sony CorporationInventors: Takeshi Yanagita, Yasushi Tateshita, Kazunobu Ota
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Patent number: 10825858Abstract: In an image pickup element, an interval between adjacent light receiving elements on a light receiving surface is changed depending on a position on the light receiving surface. Further, the image pickup element is manufactured by a method of manufacturing the image pickup element including layering photodiodes by repeatedly performing a silicon epitaxial process and an ion injection process. Further, the image pickup element is manufactured by the method of manufacturing the image pickup element including changing an interval between the photodiodes adjacent on the light receiving surface of the image pickup element in each layer depending on a position on the light receiving surface in addition to the layering thereof.Type: GrantFiled: August 6, 2015Date of Patent: November 3, 2020Assignee: Sony CorporationInventors: Takeshi Yanagita, Yasushi Tateshita, Kazunobu Ota
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Publication number: 20200321389Abstract: Image quality is improved. In an image pickup element, an interval between adjacent light receiving elements on a light receiving surface is changed depending on a position on the light receiving surface. Further, the image pickup element is manufactured by a method of manufacturing the image pickup element including layering photodiodes by repeatedly performing a silicon epitaxial process and an ion injection process. Further, the image pickup element is manufactured by the method of manufacturing the image pickup element including changing an interval between the photodiodes adjacent on the light receiving surface of the image pickup element in each layer depending on a position on the light receiving surface in addition to the layering thereof.Type: ApplicationFiled: June 22, 2020Publication date: October 8, 2020Applicant: Sony CorporatioInventors: Takeshi Yanagita, Yasushi Tateshita, Kazunobu Ota
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Patent number: 10504953Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.Type: GrantFiled: March 7, 2019Date of Patent: December 10, 2019Assignee: Sony CorporationInventors: Takeshi Yanagita, Itaru Oshiyama, Takayuki Enomoto, Harumi Ikeda, Shinichiro Izawa, Atsuhiko Yamamoto, Kazunobu Ota
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Patent number: 10418404Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.Type: GrantFiled: September 13, 2018Date of Patent: September 17, 2019Assignee: Sony CorporationInventors: Takeshi Yanagita, Itaru Oshiyama, Takayuki Enomoto, Harumi Ikeda, Shinichiro Izawa, Atsuhiko Yamamoto, Kazunobu Ota
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Publication number: 20190206911Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.Type: ApplicationFiled: March 7, 2019Publication date: July 4, 2019Applicant: SONY CORPORATIONInventors: Takeshi YANAGITA, Itaru OSHIYAMA, Takayuki ENOMOTO, Harumi IKEDA, Shinichiro IZAWA, Atsuhiko YAMAMOTO, Kazunobu OTA
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Patent number: 10332921Abstract: The present disclosure relates to a solid-state image sensing device capable of restricting an occurrence of a dark current and a method for manufacturing the same, and an electronic device. A solid-state image sensing device includes a FD part formed on a P-type semiconductor substrate by implanting an N-type impurity, a high-dielectric insulative film laminated on at least the FD part, and a contact electrode connected to the FD part in a connection structure via the high-dielectric insulative film. For example, the high-dielectric insulative film is formed by use of a material which reduces the schottky barrier height in a connection part between the FD part and the electrode in a single layer or in a plurality of layers. The present technology is applicable to CMOS image sensors, for example.Type: GrantFiled: September 27, 2016Date of Patent: June 25, 2019Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Tsukasa Miura, Shuji Manda, Tomoyuki Hirano, Junpei Yamamoto, Kazunobu Ota
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Patent number: 10306166Abstract: A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode.Type: GrantFiled: May 3, 2017Date of Patent: May 28, 2019Assignee: Sony CorporationInventors: Yorito Sakano, Takashi Abe, Keiji Mabuchi, Ryoji Suzuki, Hiroyuki Mori, Yoshiharu Kudoh, Fumihiko Koga, Takeshi Yanagita, Kazunobu Ota
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Patent number: 10192912Abstract: The present technology relates to a solid-state imaging device, a manufacturing method of a solid-state imaging device, and an electronic device, in which degradation of transfer characteristics of a photo diode can be suppressed. A floating diffusion is formed to reach the same depth as a layer of a photo diode formed on a silicon substrate, and a transfer transistor gate is formed therebetween. A channel that is opened/closed by control of the transfer transistor gate is formed in the silicon substrate formed with the photo diode. With this configuration, charge accumulated in the photo diode can be transferred to the floating diffusion in a vertical direction relative to the depth direction, and degradation of transfer characteristics caused by elimination of the transfer channel can be suppressed by setting the transfer channel in the depth direction. The present technology can be applied to a solid-state imaging device.Type: GrantFiled: January 17, 2018Date of Patent: January 29, 2019Assignee: Sony Semiconductor Solutions CorporationInventors: Takuya Sano, Ryusei Naito, Kazunobu Ota
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Publication number: 20190027520Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.Type: ApplicationFiled: September 13, 2018Publication date: January 24, 2019Applicant: SONY CORPORATIONInventors: Takeshi YANAGITA, Itaru OSHIYAMA, Takayuki ENOMOTO, Harumi IKEDA, Shinichiro IZAWA, Atsuhiko YAMAMOTO, Kazunobu OTA
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Publication number: 20180350854Abstract: The present disclosure relates to a solid-state image sensing device capable of restricting an occurrence of a dark current and a method for manufacturing the same, and an electronic device. A solid-state image sensing device includes a FD part formed on a P-type semiconductor substrate by implanting an N-type impurity, a high-dielectric insulative film laminated on at least the FD part, and a contact electrode connected to the FD part in a connection structure via the high-dielectric insulative film. For example, the high-dielectric insulative film is formed by use of a material which reduces the schottky barrier height in a connection part between the FD part and the electrode in a single layer or in a plurality of layers. The present technology is applicable to CMOS image sensors, for example.Type: ApplicationFiled: September 27, 2016Publication date: December 6, 2018Inventors: TSUKASA MIURA, SHUJI MANDA, TOMOYUKI HIRANO, JUNPEI YAMAMOTO, KAZUNOBU OTA
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Patent number: 10128291Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.Type: GrantFiled: May 31, 2017Date of Patent: November 13, 2018Assignee: Sony CorporationInventors: Takeshi Yanagita, Itaru Oshiyama, Takayuki Enomoto, Harumi Ikeda, Shinichiro Izawa, Atsuhiko Yamamoto, Kazunobu Ota
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Patent number: 10096638Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.Type: GrantFiled: May 31, 2017Date of Patent: October 9, 2018Assignee: Sony CorporationInventors: Takeshi Yanagita, Itaru Oshiyama, Takayuki Enomoto, Harumi Ikeda, Shinichiro Izawa, Atsuhiko Yamamoto, Kazunobu Ota
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Publication number: 20180240847Abstract: The present technology relates to a back surface irradiation type imaging element having an organic photoelectric conversion film capable of preventing color mixing and securing dynamic range, a method of manufacturing the same, and an electronic apparatus. An imaging element according to an aspect of the present technology includes a photoelectric conversion film provided on one side of a semiconductor substrate, a pixel separation section formed in an inter-pixel region, and a through electrode that transmits a signal, corresponding to an electric charge obtained by photoelectric conversion in the photoelectric conversion film, to a wiring layer formed on the other side of the semiconductor substrate, the through electrode being formed in the inter-pixel region. The present technology is applicable to a back surface irradiation type CMOS image sensor.Type: ApplicationFiled: February 25, 2016Publication date: August 23, 2018Inventors: Kazunobu OTA, Mitsuru SATO, Toshifumi WAKANO
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Publication number: 20180145101Abstract: The present technology relates to a solid-state imaging device, a manufacturing method of a solid-state imaging device, and an electronic device, in which degradation of transfer characteristics of a photo diode can be suppressed. A floating diffusion is formed to reach the same depth as a layer of a photo diode formed on a silicon substrate, and a transfer transistor gate is formed therebetween. A channel that is opened/closed by control of the transfer transistor gate is formed in the silicon substrate formed with the photo diode. With this configuration, charge accumulated in the photo diode can be transferred to the floating diffusion in a vertical direction relative to the depth direction, and degradation of transfer characteristics caused by elimination of the transfer channel can be suppressed by setting the transfer channel in the depth direction. The present technology can be applied to a solid-state imaging device.Type: ApplicationFiled: January 17, 2018Publication date: May 24, 2018Inventors: Takuya SANO, Ryusei NAITO, Kazunobu OTA
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Patent number: 9923010Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.Type: GrantFiled: February 17, 2017Date of Patent: March 20, 2018Assignee: Sony CorporationInventors: Takeshi Yanagita, Itaru Oshiyama, Takayuki Enomoto, Harumi Ikeda, Shinichiro Izawa, Atsuhiko Yamamoto, Kazunobu Ota
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Patent number: 9887219Abstract: The present technology relates to a solid-state imaging device, a manufacturing method of a solid-state imaging device, and an electronic device, in which degradation of transfer characteristics of a photo diode can be suppressed. A floating diffusion is formed to reach the same depth as a layer of a photo diode formed on a silicon substrate, and a transfer transistor gate is formed therebetween. A channel that is opened/closed by control of the transfer transistor gate is formed in the silicon substrate formed with the photo diode. With this configuration, charge accumulated in the photo diode can be transferred to the floating diffusion in a vertical direction relative to the depth direction, and degradation of transfer characteristics caused by elimination of the transfer channel can be suppressed by setting the transfer channel in the depth direction. The present technology can be applied to a solid-state imaging device.Type: GrantFiled: May 1, 2015Date of Patent: February 6, 2018Assignee: Sony Semiconductor Solutions CorporationInventors: Takuya Sano, Ryusei Naito, Kazunobu Ota
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Publication number: 20170287976Abstract: Image quality is improved. In an image pickup element, an interval between adjacent light receiving elements on a light receiving surface is changed depending on a position on the light receiving surface. Further, the image pickup element is manufactured by a method of manufacturing the image pickup element including layering photodiodes by repeatedly performing a silicon epitaxial process and an ion injection process. Further, the image pickup element is manufactured by the method of manufacturing the image pickup element including changing an interval between the photodiodes adjacent on the light receiving surface of the image pickup element in each layer depending on a position on the light receiving surface in addition to the layering thereof.Type: ApplicationFiled: August 6, 2015Publication date: October 5, 2017Applicant: Sony CorporationInventors: Takeshi YANAGITA, Yasushi TATESHITA, Kazunobu OTA
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Publication number: 20170271385Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.Type: ApplicationFiled: May 31, 2017Publication date: September 21, 2017Inventors: Takeshi YANAGITA, Itaru OSHIYAMA, Takayuki ENOMOTO, Harumi IKEDA, Shinichiro IZAWA, Atsuhiko YAMAMOTO, Kazunobu OTA
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Publication number: 20170237916Abstract: A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode.Type: ApplicationFiled: May 3, 2017Publication date: August 17, 2017Inventors: Yorito Sakano, Takashi Abe, Keiji Mabuchi, Ryoji Suzuki, Hiroyuki Mori, Yoshiharu Kudoh, Fumihiko Koga, Takeshi Yanagita, Kazunobu Ota