Abstract: A first light-receiving element of an embodiment of the disclosure includes: a semiconductor substrate including a photoelectric conversion region; a first first electrically-conductive region provided at a first surface interface of the semiconductor substrate and coupled to a first electrode; a second first electrically-conductive region provided around the first first electrically-conductive region and coupled to a second electrode, at the first surface interface; a third first electrically-conductive region in an electrically floating state provided around the second first electrically-conductive region, at the first surface interface; a first second electrically-conductive region having a different electrically-conductive type between the first first electrically-conductive region and the second first electrically-conductive region, at the first surface interface; and a fourth first electrically-conductive region provided at least between the first first electrically conductive region and the first secon

Abstract: A first light-receiving device of an embodiment of the disclosure includes: a first semiconductor substrate having first and second surfaces opposed to each other, receiving application of a first potential, and including light-receiving elements arranged two-dimensionally in matrix; a second semiconductor substrate having third and fourth surfaces opposed to each other, with the first surface and the third surface being disposed to be opposed to each other, receiving application of a second potential lower than the first potential, and including a logic circuit that processes a light-receiving signal based on electric charge outputted from the plurality of light-receiving elements; and an interlayer insulating layer provided between the first and second semiconductor substrates, in which the second semiconductor substrate has a side surface recessed more inward than a side surface of the first semiconductor substrate, and the side surface of the second semiconductor substrate is coated with a protective film

Abstract: A light-receiving element according to an embodiment of the present disclosure includes: a semiconductor substrate including a photoelectric conversion region; a first first electrically-conductive region provided at an interface of a first surface of the semiconductor substrate and coupled to a first electrode; a second first electrically-conductive region provided at the interface of the first surface and around the first first electrically-conductive region and coupled to a second electrode; a third first electrically-conductive region provided at the interface of the first surface and around the second first electrically-conductive region and being in an electrically floating state; and an electrically-conductive film provided above the first surface at least between the first first electrically-conductive region and the second first electrically-conductive region.

Abstract: Image quality is improved. In an image pickup element, an interval between adjacent light receiving elements on a light receiving surface is changed depending on a position on the light receiving surface. Further, the image pickup element is manufactured by a method of manufacturing the image pickup element including layering photodiodes by repeatedly performing a silicon epitaxial process and an ion injection process. Further, the image pickup element is manufactured by the method of manufacturing the image pickup element including changing an interval between the photodiodes adjacent on the light receiving surface of the image pickup element in each layer depending on a position on the light receiving surface in addition to the layering thereof.

Abstract: In an image pickup element, an interval between adjacent light receiving elements on a light receiving surface is changed depending on a position on the light receiving surface. Further, the image pickup element is manufactured by a method of manufacturing the image pickup element including layering photodiodes by repeatedly performing a silicon epitaxial process and an ion injection process. Further, the image pickup element is manufactured by the method of manufacturing the image pickup element including changing an interval between the photodiodes adjacent on the light receiving surface of the image pickup element in each layer depending on a position on the light receiving surface in addition to the layering thereof.

Abstract: Image quality is improved. In an image pickup element, an interval between adjacent light receiving elements on a light receiving surface is changed depending on a position on the light receiving surface. Further, the image pickup element is manufactured by a method of manufacturing the image pickup element including layering photodiodes by repeatedly performing a silicon epitaxial process and an ion injection process. Further, the image pickup element is manufactured by the method of manufacturing the image pickup element including changing an interval between the photodiodes adjacent on the light receiving surface of the image pickup element in each layer depending on a position on the light receiving surface in addition to the layering thereof.

Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

Abstract: The present disclosure relates to a solid-state image sensing device capable of restricting an occurrence of a dark current and a method for manufacturing the same, and an electronic device. A solid-state image sensing device includes a FD part formed on a P-type semiconductor substrate by implanting an N-type impurity, a high-dielectric insulative film laminated on at least the FD part, and a contact electrode connected to the FD part in a connection structure via the high-dielectric insulative film. For example, the high-dielectric insulative film is formed by use of a material which reduces the schottky barrier height in a connection part between the FD part and the electrode in a single layer or in a plurality of layers. The present technology is applicable to CMOS image sensors, for example.

Abstract: A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode.

Abstract: The present technology relates to a solid-state imaging device, a manufacturing method of a solid-state imaging device, and an electronic device, in which degradation of transfer characteristics of a photo diode can be suppressed. A floating diffusion is formed to reach the same depth as a layer of a photo diode formed on a silicon substrate, and a transfer transistor gate is formed therebetween. A channel that is opened/closed by control of the transfer transistor gate is formed in the silicon substrate formed with the photo diode. With this configuration, charge accumulated in the photo diode can be transferred to the floating diffusion in a vertical direction relative to the depth direction, and degradation of transfer characteristics caused by elimination of the transfer channel can be suppressed by setting the transfer channel in the depth direction. The present technology can be applied to a solid-state imaging device.

Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

Abstract: The present disclosure relates to a solid-state image sensing device capable of restricting an occurrence of a dark current and a method for manufacturing the same, and an electronic device. A solid-state image sensing device includes a FD part formed on a P-type semiconductor substrate by implanting an N-type impurity, a high-dielectric insulative film laminated on at least the FD part, and a contact electrode connected to the FD part in a connection structure via the high-dielectric insulative film. For example, the high-dielectric insulative film is formed by use of a material which reduces the schottky barrier height in a connection part between the FD part and the electrode in a single layer or in a plurality of layers. The present technology is applicable to CMOS image sensors, for example.

Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

Abstract: The present technology relates to a back surface irradiation type imaging element having an organic photoelectric conversion film capable of preventing color mixing and securing dynamic range, a method of manufacturing the same, and an electronic apparatus. An imaging element according to an aspect of the present technology includes a photoelectric conversion film provided on one side of a semiconductor substrate, a pixel separation section formed in an inter-pixel region, and a through electrode that transmits a signal, corresponding to an electric charge obtained by photoelectric conversion in the photoelectric conversion film, to a wiring layer formed on the other side of the semiconductor substrate, the through electrode being formed in the inter-pixel region. The present technology is applicable to a back surface irradiation type CMOS image sensor.

Abstract: The present technology relates to a solid-state imaging device, a manufacturing method of a solid-state imaging device, and an electronic device, in which degradation of transfer characteristics of a photo diode can be suppressed. A floating diffusion is formed to reach the same depth as a layer of a photo diode formed on a silicon substrate, and a transfer transistor gate is formed therebetween. A channel that is opened/closed by control of the transfer transistor gate is formed in the silicon substrate formed with the photo diode. With this configuration, charge accumulated in the photo diode can be transferred to the floating diffusion in a vertical direction relative to the depth direction, and degradation of transfer characteristics caused by elimination of the transfer channel can be suppressed by setting the transfer channel in the depth direction. The present technology can be applied to a solid-state imaging device.

Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

Abstract: The present technology relates to a solid-state imaging device, a manufacturing method of a solid-state imaging device, and an electronic device, in which degradation of transfer characteristics of a photo diode can be suppressed. A floating diffusion is formed to reach the same depth as a layer of a photo diode formed on a silicon substrate, and a transfer transistor gate is formed therebetween. A channel that is opened/closed by control of the transfer transistor gate is formed in the silicon substrate formed with the photo diode. With this configuration, charge accumulated in the photo diode can be transferred to the floating diffusion in a vertical direction relative to the depth direction, and degradation of transfer characteristics caused by elimination of the transfer channel can be suppressed by setting the transfer channel in the depth direction. The present technology can be applied to a solid-state imaging device.