Abstract: A field-effect transistor according to the present invention includes a silicon substrate that has a resistivity of not more than 0.02 ?·cm, a channel layer that is formed on the silicon substrate and has a thickness of at least 5 ?m, a barrier layer that is formed on the channel layer and supplies the channel layer with electrons, a two dimensional electron gas layer that is formed by a hetero junction between the channel layer and the barrier layer, a source electrode and a drain electrode that each form an ohmic contact with the barrier layer, and a gate electrode that is formed between the source electrode and the drain electrode, and forms a Schottky barrier junction with the barrier layer.

Abstract: A field-effect transistor according to the present invention includes a silicon substrate that has a resistivity of not more than 0.02 ?•cm, a channel layer that is formed on the silicon substrate and has a thickness of at least 5 ?m, a barrier layer that is formed on the channel layer and supplies the channel layer with electrons, a two dimensional electron gas layer that is formed by a hetero junction between the channel layer and the barrier layer, a source electrode and a drain electrode that each form an ohmic contact with the barrier layer, and a gate electrode that is formed between the source electrode and the drain electrode, and forms a Schottky barrier junction with the barrier layer.

Abstract: A mounting structure of a vehicle interior material, includes: a boss part protruded from a rear surface of a vehicle interior material; a clip which has a U-shaped body; a mounting hole punched through the vehicle body; a first engaging piece to be engaged with an engaging hole provided on the boss part; a second engaging piece that faces the engaging hole; and an inclined shoulder to be locked by an edge of the mounting hole, wherein: the vehicle interior material is mounted on a vehicle body by locking the boss part in the mounting hole; the first engaging piece is formed on an inner surface of one sidewall, and the second engaging piece is formed on an inner surface of the other sidewall of the U-shaped body; and the inclined shoulder is form on the upper outer surface of the other sidewall.

Abstract: A clip has a base A having a U shape composed of a pair of parallel sections, and a joining section having flexibility and interconnecting the lower parts thereof, elastic pieces respectively branching from the insides of the parallel sections in the opposed directions, and extending along the parallel sections and the joining section, claws respectively protruding inwardly on the elastic pieces, and step sections having upper surfaces respectively projecting outward from the outer sides of the parallel sections and being inclined obliquely downward.

Abstract: A mounting structure of a vehicle interior material, includes: a boss part protruded from a rear surface of a vehicle interior material; a clip which has a U-shaped body; a mounting hole punched through the vehicle body; a first engaging piece to be engaged with an engaging hole provided on the boss part; a second engaging piece that faces the engaging hole; and an inclined shoulder to be locked by an edge of the mounting hole, wherein: the vehicle interior material is mounted on a vehicle body by locking the boss part in the mounting hole; the first engaging piece is formed on an inner surface of one sidewall, and the second engaging piece is formed on an inner surface of the other sidewall of the U-shaped body; and the inclined shoulder is form on the upper outer surface of the other sidewall.

Abstract: A clip has a base A having a U shape composed of a pair of parallel sections, and a joining section having flexibility and interconnecting the lower parts thereof, elastic pieces respectively branching from the insides of the parallel sections in the opposed directions, and extending along the parallel sections and the joining section, claws respectively protruding inwardly on the elastic pieces, and step sections having upper surfaces respectively projecting outward from the outer sides of the parallel sections and being inclined obliquely downward.

Abstract: To provide a semiconductor device that is capable of transmitting heat evolved in an active element efficiently to a heat sink member, and a manufacturing method for the semiconductor device. One of the terminals (such as drain electrode) of an active element formed in a substrate of, for example, GaAs, is thermally contacted with a heat sink member via an insulating member of, for example, aluminum nitride, exhibiting thermally conductive and electrically insulating properties. The heat sink member may, for example, be an electrically conductive member connected to another terminal of the active element, or a heat sink of a package.

Abstract: A resin clip includes a head for abutting on one surface of a panel upon insertion into an attachment hole thereof, a pillar extending from the center of the head, and a pair of elastic legs folded back at a tip portion of the pillar toward the head and spreading out in a V shape. Locking parts in shapes of multiple steps are formed outside the elastic leg. In addition, one side in a width direction inside the elastic leg is more protruded toward the pillar than the other side, and the pillar includes a dented portion for receiving the protruded portion.

Abstract: A dielectric film 4 made of a high dielectric material with a relative permittivity of 8 or more is laid between a field plate section 9 and a channel layer 2. Tantalum oxide (Ta2O5), for example, may be used as the high dielectric material.

Abstract: A field effect transistor includes a semiconductor substrate with a channel layer being formed on its surface, a source electrode and a drain electrode formed at a distance on said semiconductor substrate, and a gate electrode placed between the source electrode and the drain electrode and making a Schottky junction with the channel layer. The gate electrode is provided with an overhanging field plate section and between the field plate section and the channel layer, there is laid a dielectric film. When the relative permittivity and the film thickness of the dielectric film are denoted by ∈ and t (nm), respectively, the following condition is satisfied 5≦∈<8, and 100<t<350.

Abstract: A resin clip includes a head for abutting on one surface of a panel upon insertion into an attachment hole thereof, a pillar extending from the center of the head, and a pair of elastic legs folded back at a tip portion of the pillar toward the head and spreading out in a V shape. Locking parts in shapes of multiple steps are formed outside the elastic leg. In addition, one side in a width direction inside the elastic leg is more protruded toward the pillar than the other side, and the pillar includes a dented portion for receiving the protruded portion.

Abstract: To provide a semiconductor device that is capable of transmitting heat evolved in an active element efficiently to a heat sink member, and a manufacturing method for the semiconductor device. One of the terminals (such as drain electrode) of an active element formed in a substrate of, for example, GaAs, is thermally contacted with a heat sink member via an insulating member of, for example, aluminum nitride, exhibiting thermally conductive and electrically insulating properties. The heat sink member may, for example, be an electrically conductive member connected to another terminal of the active element, or a heat sink of a package.

Abstract: A field effect transistor includes (a) a semi-insulating GaAs substrate, (b) a step-doped structured active layer including an n type GaAs layer deposited on the substrate, and an n− type GaAs layer or a non-doped GaAs layer deposited on the n type GaAs layer, the n− type GaAs layer or non-doped GaAs layer being formed with at least one recess, and (c) a gate electrode formed in the recess so that the gate electrode is oriented in such a direction that drain current runs in the active layer along crystal orientation [01(−1)]. The field effect transistor enhances linearity of transfer conductance, and further improves strain characteristic.

Abstract: To provide a semiconductor device that is capable of transmitting heat evolved in an active element efficiently to a heat sink member, and a manufacturing method for the semiconductor device. One of the terminals (such as drain electrode) of an active element formed in a substrate of, for example, GaAs, is thermally contacted with a heat sink member via an insulating member of, for example, aluminum nitride, exhibiting thermally conductive and electrically insulating properties. The heat sink member may, for example, be an electrically conductive member connected to another terminal of the active element, or a heat sink of a package.

Abstract: A semiconductor device of the present invention includes ohmic source plate electrodes, gate plate electrodes, and drain plate electrodes in parallel from each other in a heat generating region various designs are used to more evenly distribute heat generated in the semiconductor device. A first example has gold-plate electrodes formed on the respective source and drain plate electrodes in parallel with the ohmic plate electrodes. The gold-plate electrode arranged at the central portion of the heat generating region plate electrodes has the widest width and gold-plate electrodes arranged toward the center portion to the peripheral portion of the heat generating region narrow gradually. By the structure mentioned above, the semiconductor device of the present invention has uniform temperature distribution in a heat generating region. A second example uses a plurality of stripe plates perpendicular to the ohmic plate electrodes.

Abstract: To provide a semiconductor device that is capable of transmitting heat evolved in an active element efficiently to a heat sink member, and a manufacturing method for the semiconductor device. One of the terminals (such as drain electrode) of an active element formed in a substrate of, for example, GaAs, is thermally contacted with a heat sink member via an insulating member of, for example, aluminum nitride, exhibiting thermally conductive and electrically insulating properties. The heat sink member may, for example, be an electrically conductive member connected to another terminal of the active element, or a heat sink of a package.

Abstract: To provide a semiconductor device that is capable of transmitting heat evolved in an active element efficiently to a heat sink member, and a manufacturing method for the semiconductor device. One of the terminals (such as drain electrode) of an active element formed in a substrate of, for example, GaAs, is thermally contacted with a heat sink member via an insulating member of, for example, aluminum nitride, exhibiting thermally conductive and electrically insulating properties. The heat sink member may, for example, be an electrically conductive member connected to another terminal of the active element, or a heat sink of a package.

Abstract: A field control electrode 9 is formed over an insulating film 6 on a channel layer 2, between a gate electrode 5 and a drain electrode 8. Tantalum oxide (Ta.sub.2 O.sub.5), for example, may be used as the material for the insulating film 6.

Abstract: A semiconductor device has a structure in which pluralities of gate electrodes, drain electrodes, and source electrodes extend in parallel to each another. The semiconductor device includes at least one isolation area formed in a direction perpendicular to at least one gate electrode so as to separate one active layer area formed on a semiconductor substrate into a plurality of active layer areas. The at least one gate electrode is connected to each of the plurality of active layer areas separated by the at least one isolation area.