Abstract: A semiconductor device includes a first semiconductor element, a second semiconductor element, a support substrate and a sealing resin, and further includes a heat dissipation member disposed on the reverse surface. The heat dissipation member includes a plurality of first protruding elements each including a first base portion, a second base portion, a first standing portion, a second standing portion, and a first end portion. The plurality of first protruding elements are arranged in a matrix along a plane containing the first direction and the second direction.

Abstract: An electronic device A1 of the present disclosure includes an electronic component 1, a support member (die pad portion 21 of a lead frame 2) including a mount surface (obverse surface 211) carrying the electronic component 1, and a bonding material 3 provided between the electronic component 1 and the support member (die pad portion 21) for fixing the electronic component 1 to the support member (die pad portion 21). The mount surface (obverse surface 211) includes a first region 211a where a plurality of grooves 711 are formed and a second region 211b that surrounds the first region 211a as viewed in the z direction. The bonding material 3 is in contact with the first region 211a, and is not in contact with the second region 211b. This configuration serves to achieve an improvement in the reliability of the electronic device.

Abstract: A joint structure includes a first and a second metal member overlapping with each other as viewed in a first direction. The first metal member and the second metal member are joined together. The joint structure includes a welded portion at which the first metal member and the second metal member, overlapping with each other, are partly fused to each other. The welded portion has an outer circumferential edge and a plurality of linear marks. The outer circumferential edge is annular as viewed in the first direction. The plurality of linear marks each extend from an inside of the welded portion toward the outer circumferential edge as viewed in the first direction. Each of the plurality of linear marks is curved to bulge to one sense of an annular direction along the outer circumferential edge.

Abstract: A method for manufacturing a semiconductor device includes a step of preparing a semiconductor wafer source which includes a first main surface on one side, a second main surface on the other side and a side wall connecting the first main surface and the second main surface, an element forming step of setting a plurality of element forming regions on the first main surface of the semiconductor wafer source, and forming a semiconductor element at each of the plurality of element forming regions, and a wafer source separating step of cutting the semiconductor wafer source from a thickness direction intermediate portion along a horizontal direction parallel to the first main surface, and separating the semiconductor wafer source into an element formation wafer and an element non-formation wafer after the element forming step.

Abstract: A semiconductor device includes an insulating layer, conductors, a semiconductor element and a sealing resin. The insulating layer has first and second surfaces opposite to each other in the thickness direction. Each conductor has an embedded part whose portion is embedded in the insulating layer and a redistribution part disposed at the second surface and connected to the embedded part. The semiconductor element has electrodes provided near the first surface and connected the embedded parts of the conductors. The semiconductor element is in contact with the first surface. The sealing resin partially covers the semiconductor element and is in contact with the first surface. The redistribution parts include portions outside the semiconductor element as viewed in the thickness direction. The insulating layer has grooves recessed from the second surface in the thickness direction. The redistribution parts are in contact with the grooves.

Abstract: A semiconductor device includes a first lead, a second lead, a third lead, a semiconductor element mounted on the third lead, a first wire, and a second wire. The first lead includes a first pad portion, and a first terminal for measuring a temperature. The second lead includes a second pad portion, and a second terminal portion for measuring a temperature. The semiconductor element includes an element obverse surface, and a first electrode arranged on the element obverse surface. The first wire and the second wire are made of metals having different thermoelectric powers. The first wire is connected to the first electrode and the first pad portion. The second wire is connected to the first electrode and the second pad portion.

Abstract: A joint structure includes a first and a second metal member overlapping with each other as viewed in a first direction. The first metal member and the second metal member are joined together. The joint structure includes a welded portion at which the first metal member and the second metal member, overlapping with each other, are partly fused to each other. The welded portion has an outer circumferential edge and a plurality of linear marks. The outer circumferential edge is annular as viewed in the first direction. The plurality of linear marks each extend from an inside of the welded portion toward the outer circumferential edge as viewed in the first direction. Each of the plurality of linear marks is curved to bulge to one sense of an annular direction along the outer circumferential edge.

Abstract: A semiconductor device includes a first semiconductor element, a sealing resin, and a heat dissipating layer. The first semiconductor element includes a first obverse surface that faces in a first direction, and a first electrode and a second electrode that are located on a side opposite the first obverse surface in the first direction. The sealing resin covers the first semiconductor element. The heat dissipating layer is bonded to the first obverse surface. The heat dissipating layer includes a heat dissipating surface facing a same side as the first obverse surface in the first direction. The heat dissipating surface is exposed from the sealing resin to the outside. As viewed in the first direction, the peripheral edge of the heat dissipating surface surrounds the first obverse surface.

Abstract: A semiconductor device includes a first semiconductor element with a first gate electrode, a second semiconductor element with a second gate electrode, a sealing resin, a first signal terminal with a third center, and a first signal wiring. The first line connecting the first center of the first gate electrode and the third center has a first line length L1. The second line connecting the second center of the second gate electrode and the third center has a second line length L2. The path from the first center to the third center via the first signal wiring has a first path length R1. The path from the second center to the third center via the first signal wiring has a second path length R2. In the semiconductor device, R2/R1 is closer to 1 than is L2/L1.

Abstract: A method for manufacturing a semiconductor device includes a step of preparing a semiconductor wafer source which includes a first main surface on one side, a second main surface on the other side and a side wall connecting the first main surface and the second main surface, an element forming step of setting a plurality of element forming regions on the first main surface of the semiconductor wafer source, and forming a semiconductor element at each of the plurality of element forming regions, and a wafer source separating step of cutting the semiconductor wafer source from a thickness direction intermediate portion along a horizontal direction parallel to the first main surface, and separating the semiconductor wafer source into an element formation wafer and an element non-formation wafer after the element forming step.

Abstract: Semiconductor device A1 of the disclosure includes: semiconductor element 11 having element obverse surface 11a and element reverse surface 11b spaced apart from each other in z direction (first direction) with first region 111 formed on the element obverse surface 11a; metal plate 31 (electrode member) disposed on the element obverse surface 11a and electrically connected to the first region 111; electrically conductive substrate 22A (first conductive member) disposed to face the element reverse surface 11b and bonded to the semiconductor element 11; electrically conductive substrate 22B (second conductive member) spaced apart from the conductive substrate 22A (first conductive member); and lead member 5 (connecting member) electrically connecting the metal plate 31 (electrode member) and the conductive substrate 22B (second conductive member). The lead member 5 (connecting member) is bonded to the metal plate 31 (electrode member) by laser welding.

Abstract: A circuit component includes a magnetic layer, a first insulating layer, a second insulating layer, and a wiring. The first insulating layer is stacked on a first side in a thickness direction relative to the magnetic layer, and the second insulating layer is stacked on a second side in the thickness direction relative to the magnetic layer. The wiring includes a first wiring layer located between the magnetic layer and the first insulating layer, a second wiring layer located on the second side in the thickness direction relative to the second insulating layer, and a first through-wiring segment penetrating the magnetic layer and the second insulating layer and connected to the first wiring layer and the second wiring layer. The first wiring layer, the second wiring layer, and the first through-wiring segment constitute a winding segment.

Abstract: A semiconductor module includes a conductive member, a semiconductor element, and a heat transfer layer. The conductive member includes a first obverse surface facing in a thickness direction. The semiconductor element includes a first electrode and a first gate electrode that face the first obverse surface and a second electrode opposite to the side facing the first obverse surface. The first electrode connects to the conductive member. The heat transfer layer between the first obverse surface and the semiconductor element is conductively bonded to the first obverse surface, and connected to the first electrode. The heat transfer layer includes a first surface facing the first obverse surface and a second surface facing the semiconductor element. The second surface is spaced from the first gate electrode as viewed in the thickness direction. The second surface is surrounded by the periphery of the first surface as viewed in the thickness direction.

Abstract: Semiconductor device A1 of the disclosure includes: semiconductor element 11 having element obverse surface 11a and element reverse surface 11b spaced apart from each other in z direction (first direction) with first region 111 formed on the element obverse surface 11a; metal plate 31 (electrode member) disposed on the element obverse surface 11a and electrically connected to the first region 111; electrically conductive substrate 22A (first conductive member) disposed to face the element reverse surface 11b and bonded to the semiconductor element 11; electrically conductive substrate 22B (second conductive member) spaced apart from the conductive substrate 22A (first conductive member); and lead member 5 (connecting member) electrically connecting the metal plate 31 (electrode member) and the conductive substrate 22B (second conductive member). The lead member 5 (connecting member) is bonded to the metal plate 31 (electrode member) by laser welding.

Abstract: A semiconductor device includes a semiconductor element (30), an input lead, and first drive leads (60) connecting a source electrode of the semiconductor element (30) to the input lead. The first drive leads (60) are formed of a thin metal plate that is belt-shaped as viewed in a thickness-wise direction (Z). The first drive leads (60) include at least a metal plate (60A) connected to the semiconductor element (60) and a metal plate (60B) stacked on the metal plate (60A). The metal plate (60A) includes a first connector (61A) connected to the semiconductor element (30). The metal plate (60B) includes a first connector (61B) connected to the first connector (61A). The first connectors (61A, 61B) are stacked in the thickness-wise direction (Z).

Abstract: A crystal cutting method includes a step of preparing a crystal structure body constituted of a hexagonal crystal, a first cutting step of cutting the crystal structure body along a [1-100] direction of the hexagonal crystal and forming a first cut portion in the crystal structure body and a second cutting step of cutting the crystal structure body along a [11-20] direction of the hexagonal crystal and forming a second cut portion crossing the first cut portion in the crystal structure body.

Abstract: A semiconductor device includes an insulating layer, conductors, a semiconductor element and a sealing resin. The insulating layer has first and second surfaces opposite to each other in the thickness direction. Each conductor has an embedded part whose portion is embedded in the insulating layer and a redistribution part disposed at the second surface and connected to the embedded part. The semiconductor element has electrodes provided near the first surface and connected the embedded parts of the conductors. The semiconductor element is in contact with the first surface. The sealing resin partially covers the semiconductor element and is in contact with the first surface. The redistribution parts include portions outside the semiconductor element as viewed in the thickness direction. The insulating layer has grooves recessed from the second surface in the thickness direction. The redistribution parts are in contact with the grooves.

Abstract: This semiconductor light-emitting device includes a substrate having a substrate main surface, a semiconductor light-emitting element having a light-emitting element main surface mounted on the substrate main surface and facing the same side as the substrate main surface, and a light-emitting element side surface that is a light-emitting surface facing a direction intersecting the light-emitting element main surface, a switching element and a capacitor mounted on the substrate main surface and serving as drive elements used in driving the semiconductor light-emitting element, a translucent member formed from a material having a greater linear expansion coefficient than the substrate and transmitting light emitted from the light-emitting side surface, the translucent member covering the light-emitting element side surface, and a sealing resin formed from a material that has a smaller linear expansion coefficient than the translucent member, the sealing resin sealing the semiconductor light-emitting element, th

Abstract: A semiconductor device includes an insulating layer, conductors, a semiconductor element and a sealing resin. The insulating layer has first and second surfaces opposite to each other in the thickness direction. Each conductor has an embedded part whose portion is embedded in the insulating layer and a redistribution part disposed at the second surface and connected to the embedded part. The semiconductor element has electrodes provided near the first surface and connected the embedded parts of the conductors. The semiconductor element is in contact with the first surface. The sealing resin partially covers the semiconductor element and is in contact with the first surface. The redistribution parts include portions outside the semiconductor element as viewed in the thickness direction. The insulating layer has grooves recessed from the second surface in the thickness direction. The redistribution parts are in contact with the grooves.

Abstract: A method for manufacturing a semiconductor device includes a step of preparing a semiconductor wafer source which includes a first main surface on one side, a second main surface on the other side and a side wall connecting the first main surface and the second main surface, an element forming step of setting a plurality of element forming regions on the first main surface of the semiconductor wafer source, and forming a semiconductor element at each of the plurality of element forming regions, and a wafer source separating step of cutting the semiconductor wafer source from a thickness direction intermediate portion along a horizontal direction parallel to the first main surface, and separating the semiconductor wafer source into an element formation wafer and an element non-formation wafer after the element forming step.