Abstract: The controller is programmed to cause a low-surface-tension liquid supply unit to supply a liquid film of a low-surface-tension liquid to a front surface of a substrate so as to form a liquid film of the low-surface-tension liquid. The controller is programmed to control the substrate rotating unit and the inert gas supply unit so that an inert gas is supplied toward the rotational center position while rotating the substrate, thereby forming an opening spreading from the rotational center position to be formed in the liquid film, and enlarging the opening in a direction away from the rotational center position, and to control the landing-position changing unit to change the landing position of the low-surface-tension liquid to at least two positions except the rotational center position in accordance with enlargement of the opening so that the landing position is placed outside the peripheral edge of the opening.

Abstract: The controller is programmed to cause a low-surface-tension liquid supply unit to supply a liquid film of a low-surface-tension liquid to a front surface of a substrate so as to form a liquid film of the low-surface-tension liquid. The controller is programmed to control the substrate rotating unit and the inert gas supply unit so that an inert gas is supplied toward the rotational center position while rotating the substrate, thereby forming an opening spreading from the rotational center position to be formed in the liquid film, and enlarging the opening in a direction away from the rotational center position, and to control the landing-position changing unit to change the landing position of the low-surface-tension liquid to at least two positions except the rotational center position in accordance with enlargement of the opening so that the landing position is placed outside the peripheral edge of the opening.

Abstract: In a substrate processing apparatus, an anti-static liquid supply part supplies the anti-static liquid having electrical resistivity higher than that of an SPM liquid onto a substrate to puddle an entire upper surface of the substrate with the anti-static liquid, to thereby gradually remove static electricity from the substrate. Then, the processing liquid supply part supplies the SPM liquid onto the substrate to thereby perform an SPM process. In the SPM process, it is thereby possible to prevent a large amount of electric charges from rapidly moving from the substrate to the SPM liquid and prevent any damage to the substrate. Further, by maintaining the electrical resistivity of the anti-static liquid at the target electrical resistivity, it is possible to increase the static elimination efficiency of the substrate and shorten the time required for the static elimination process within the limits of causing no damage to the substrate.

Abstract: In a substrate processing apparatus, an anti-static liquid supply part supplies the anti-static liquid having electrical resistivity higher than that of an SPM liquid onto a substrate to puddle an entire upper surface of the substrate with the anti-static liquid, to thereby gradually remove static electricity from the substrate. Then, the processing liquid supply part supplies the SPM liquid onto the substrate to thereby perform an SPM process. In the SPM process, it is thereby possible to prevent a large amount of electric charges from rapidly moving from the substrate to the SPM liquid and prevent any damage to the substrate. Further, by maintaining the electrical resistivity of the anti-static liquid at the target electrical resistivity, it is possible to increase the static elimination efficiency of the substrate and shorten the time required for the static elimination process within the limits of causing no damage to the substrate.

Abstract: A substrate processing apparatus for drying a substrate is provided with a chamber, quartz tank, nitrogen supply part, blowing mechanism, hot water unit and substrate holding mechanism. A substrate after being subjected to cleaning with pure water is placed in the quartz tank in the chamber. This substrate is heated by immersing it into hot water supplied from the hot water unit (degassed and heated pure water), and then lifted in the atmosphere of the chamber by the substrate holding mechanism. The atmosphere of the chamber is brought into a low oxygen state by using of nitrogen gas supplied from the nitrogen supply part and blowing mechanism. Thereby, the pure water attached to the substrate evaporates by the accumulated heat of the substrate in the low oxygen atmosphere. This permits to provide a substrate processing apparatus and a substrate processing method with which it is possible to dry a substrate while suppressing the occurrence of water marks.

Abstract: Semiconductor substrates are held by a substrate holder having a parallel arrangement of bridges, and are capable of being dipped in processing liquids by the holder. Each bridge has an alternate arrangement of teeth and valleys to define Y-shaped notches. Vent holes are formed in the bottoms of the notches for ready drainage of processing liquids. The substrates are held in the notches while contacting only the walls of the notches. Thus, there is minimum contact between the substrates and the substrate holder. When the holder is lifted up from the processing liquid, part of the processing liquid remaining around the contacts between the substrates and the valleys drain through the vent holes, which attributes to the rapid drying of the substrates.

Abstract: An apparatus for rinsing and drying a substrate includes a process chamber; a rinsing bath provided in the process chamber and having a first opening and a second opening at the bottom and at the upper portion, respectively; a device for supplying a rinsing solution into the rinsing bath through the first opening; a device for discharging the rinsing solution overflowing from the rinsing bath to the outside of the process chamber; a device for discharging the rinsing solution from the first opening of the rinsing bath; a device for elevating and lowering the substrate between positions above the rinsing bath and within the rinsing bath; a device for supplying predetermined ionized and heated gas, preferably, inactive gas such as nitrogen gas, into the process chamber; and a device for reducing pressure in the process chamber so as to dry the rinsed substrate.

Abstract: The present invention is an electrolytic capacitor comprising a titanium-deposited aluminum foil used as the cathode. An aluminum foil is subjected to vacuum deposition of titanium with a deposition angle, thereby obtaining an electrolytic capacitor having a larger electrostatic capacitance than the conventional.