Abstract: Provided is a plasma processing device which processes an object to be processed using plasma. The plasma processing device includes: a processing container configured to perform a processing by the plasma therein; and a plasma generation mechanism including a high-frequency generator disposed outside the processing container to generate high-frequency waves. The plasma generation mechanism is configured to generate the plasma in the processing container using the high-frequency waves generated by the high-frequency generator. The high-frequency generator includes a high-frequency oscillator configured to oscillate the high-frequency waves and an injection unit configured to inject a signal into the high-frequency oscillator. The signal has a frequency which is the same as a fundamental frequency oscillated by the high-frequency oscillator and has reduced different frequency components.

Abstract: An apparatus includes a chamber main body, a microwave output device that generates a microwave having a bandwidth, a wave guide tube that is connected between the microwave output device and the chamber main body, and tuner that is provided in the wave guide tube. The microwave output device generates a microwave of which power is pulse-modulated to have a high level and a low level. The tuner includes a stub configured to be adjusted a protrusion amount with respect to an internal space of the wave guide tube, a tuner wave detection unit that detects a measured value corresponding to power of a microwave in the wave guide tube at a timing based on the pulse frequency and the setting duty ratio, and a tuner control unit that adjusts a protrusion amount of the stub on the basis of the measured value detected by the tuner wave detection unit.

Abstract: A microwave automatic matcher includes a movable body, a driving unit, a matching control unit, a reflection coefficient measuring unit, and a setting unit. The matching control unit consecutively moves the movable body from a start position in one direction by a distance of a difference between the start position and the target position in a matching operation carried out for the plasma process and then variably controls the position of the movable body until the measurement of the reflection coefficient obtained by the reflection coefficient measuring unit falls within the first neighboring range by monitoring the measurement of the reflection coefficient.

Abstract: A plasma processing apparatus (11) is provided with: a processing container (12), in which processing is performed using plasma; a plasma generating mechanism (19), which has a high frequency oscillator that oscillates high frequency, includes a high frequency generator that generates high frequency by being disposed outside of the processing container (12), and which generates plasma in the processing container (12) using the high frequency generated by means of the high frequency generator; a determining mechanism, which determines the state of the high frequency oscillator; and a notifying mechanism, which performs notification of determination results obtained from the determining mechanism.

Abstract: A magnetron can be inspected with high accuracy. A life of the magnetron is determined on the basis of a comparison between a current parameter, which indicates a current status of the magnetron and is obtained from the one or more measurement values for specifying a current status of the magnetron at a time point when a time period having a predetermined duration or more has elapsed after generation of a high frequency power by the magnetron is started, and a difference between a power of a progressive wave and a set power is equal to or lower than a first predetermined value and a power of a reflection wave is equal to or lower than a second predetermined value, and an initial parameter, which indicates an initial status of the magnetron and corresponds to the current parameter.

Abstract: Provided are a novel sex pheromone composition of peach fruit moth which is expected to be used in emergence forecast, mass trapping and mating disruption and has higher attractiveness than that of conventional sex pheromone compositions; and a sex attractant, a mating disruptant and a control method comprising the novel sex pheromone composition as an active ingredient. Specifically provided are a novel sex pheromone composition of peach fruit moth comprising (Z)-7-tricosene and (Z)-13-eicosen-10-one, a sex attractant and a mating disruptant comprising this sex pheromone composition, and a method for controlling peach fruit moth using this sex pheromone composition.

Abstract: A microwave automatic matcher includes a movable body, a driving unit, a matching control unit, a reflection coefficient measuring unit, and a setting unit. The matching control unit consecutively moves the movable body from a start position in one direction by a distance of a difference between the start position and the target position in a matching operation carried out for the plasma process and then variably controls the position of the movable body until the measurement of the reflection coefficient obtained by the reflection coefficient measuring unit falls within the first neighboring range by monitoring the measurement of the reflection coefficient.

Abstract: A plasma processing apparatus includes a plasma generating device configured to generate a plasma within a processing vessel by using a high frequency wave generated by a microwave generator 41 including a magnetron 42 configured to generate the high frequency wave; detectors 54a and 54b configured to measure a power of a traveling wave that propagates to a load side and a power of a reflected wave reflected from the load side, respectively; and a voltage control circuit 53a configured to control a voltage supplied to the magnetron 42 by a power supply 43. Further, the voltage control circuit 53a includes a load control device configured to supply, to the magnetron 42, a voltage corresponding to a power calculated by adding a power calculated based on the power of the reflected wave measured by the detector 54b to the power of the traveling wave measured by the detector 54a.

Abstract: Provided is a plasma processing apparatus that performs a processing on a processing target object using plasma. The plasma processing apparatus includes a processing container and a plasma generating mechanism including a high frequency generator disposed outside of the processing container to generate high frequency waves. The plasma generating mechanism generates plasma in the processing container using the high frequency waves and includes: a high frequency oscillator that oscillates the high frequency waves; a power supply unit that supplies a power to the high frequency oscillator; a waveguide path that propagates the high frequency waves oscillated by the high frequency oscillator to the processing container side which becomes a load side; and a voltage standing wave ratio variable mechanism that varies a voltage standing wave ratio of voltage standing waves formed in the waveguide path by the high frequency waves, according to the power supplied from the power supply unit.

Abstract: The present invention provides technology for realizing higher purification of a polycrystalline silicon. First, trichlorosilane is prepared as a sample (S101) and then the carbon-containing impurities content in the trichlorosilane is analyzed by GC/MS-SIM method (S102). The quality of the trichlorosilane is determined based on the analysis results (S103) and the trichlorosilane determined to be a good material (S103: Yes) is used as the raw material for producing a high-purity polycrystalline silicon by CVD method (104). In case, the trichlorosilane determined to be a bad material (S103: No) is not used as the raw material for producing a polycrystalline silicon. When the impurities analysis by GC/MS-SIM method is performed using, as a separation column, a column having a non-polar column and a medium-polar column connected in series with each other, it is possible to simultaneously perform both of the separation of chlorosilanes and hydrocarbons and the separation of chlorosilanes and methylsilanes.

Abstract: A magnetron can be inspected with high accuracy. A life of the magnetron is determined on the basis of a comparison between a current parameter, which indicates a current status of the magnetron and is obtained from the one or more measurement values for specifying a current status of the magnetron at a time point when a time period having a predetermined duration or more has elapsed after generation of a high frequency power by the magnetron is started, and a difference between a power of a progressive wave and a set power is equal to or lower than a first predetermined value and a power of a reflection wave is equal to or lower than a second predetermined value, and an initial parameter, which indicates an initial status of the magnetron and corresponds to the current parameter.

Abstract: A plasma processing apparatus includes a processing container and a plasma generating mechanism including a high-frequency oscillator. The arrangement is configured to generate plasma within the processing container by using a high frequency wave oscillated by the high-frequency oscillator. In addition, an impedance regulator is configured to adjust impedance to be applied to the high-frequency oscillator. Further, a determining unit is configured to change the impedance to be adjusted by the impedance regulator and to determine an abnormal oscillation of the high-frequency oscillator based on (a) a component of a center frequency of a fundamental wave that is the high frequency wave oscillated by the high-frequency oscillator, and (b) a component of a peripheral frequency present at both ends of a predetermined frequency band centered around the center frequency of the fundamental wave in a state where the impedance is changed.

Abstract: Provided is a plasma processing apparatus that performs a processing on a processing target object using plasma. The plasma processing apparatus includes a processing container and a plasma generating mechanism including a high frequency generator disposed outside of the processing container to generate high frequency waves. The plasma generating mechanism generates plasma in the processing container using the high frequency waves and includes: a high frequency oscillator that oscillates the high frequency waves; a power supply unit that supplies a power to the high frequency oscillator; a waveguide path that propagates the high frequency waves oscillated by the high frequency oscillator to the processing container side which becomes a load side; and a voltage standing wave ratio variable mechanism that varies a voltage standing wave ratio of voltage standing waves formed in the waveguide path by the high frequency waves, according to the power supplied from the power supply unit.

Abstract: The present invention provides technology for realizing higher purification of a polycrystalline silicon. First, trichlorosilane is prepared as a sample (S101) and then the carbon-containing impurities content in the trichlorosilane is analyzed by GC/MS-SIM method (S102). The quality of the trichlorosilane is determined based on the analysis results (S103) and the trichlorosilane determined to be a good material (S103: Yes) is used as the raw material for producing a high-purity polycrystalline silicon by CVD method (104). In case, the trichlorosilane determined to be a bad material (S103: No) is not used as the raw material for producing a polycrystalline silicon. When the impurities analysis by GC/MS-SIM method is performed using, as a separation column, a column having a non-polar column and a medium-polar column connected in series with each other, it is possible to simultaneously perform both of the separation of chlorosilanes and hydrocarbons and the separation of chlorosilanes and methylsilanes.

Abstract: A plasma processing apparatus (11) is provided with: a processing container (12), in which processing is performed using plasma; a plasma generating mechanism (19), which has a high frequency oscillator that oscillates high frequency, includes a high frequency generator that generates high frequency by being disposed outside of the processing container (12), and which generates plasma in the processing container (12) using the high frequency generated by means of the high frequency generator; a determining mechanism, which determines the state of the high frequency oscillator; and a notifying mechanism, which performs notification of determination results obtained from the determining mechanism.

Abstract: Disclosed is a plasma processing apparatus including: a processing container; a plasma generating mechanism including a high-frequency oscillator, and configured to generate plasma within the processing container by using a high frequency wave oscillated by the high-frequency oscillator; an impedance regulator configured to adjust impedance to be applied to the high-frequency oscillator; and a determining unit configured to change the impedance to be adjusted by the impedance regulator and to determine an abnormal oscillation of the high-frequency oscillator based on a component of a center frequency of a fundamental wave that is the high frequency wave oscillated by the high-frequency oscillator, and a component of a peripheral frequency present at both ends of a predetermined frequency band centered around the center frequency of the fundamental wave in a state where the impedance is changed.

Abstract: Provided is a plasma processing device which processes an object to be processed using plasma. The plasma processing device includes: a processing container configured to perform a processing by the plasma therein; and a plasma generation mechanism including a high-frequency generator disposed outside the processing container to generate high-frequency waves. The plasma generation mechanism is configured to generate the plasma in the processing container using the high-frequency waves generated by the high-frequency generator. The high-frequency generator includes a high-frequency oscillator configured to oscillate the high-frequency waves and an injection unit configured to inject a signal into the high-frequency oscillator. The signal has a frequency which is the same as a fundamental frequency oscillated by the high-frequency oscillator and has reduced different frequency components.

Abstract: A plasma processing apparatus includes a plasma generating device configured to generate a plasma within a processing vessel by using a high frequency wave generated by a microwave generator 41 including a magnetron 42 configured to generate the high frequency wave; detectors 54a and 54b configured to measure a power of a traveling wave that propagates to a load side and a power of a reflected wave reflected from the load side, respectively; and a voltage control circuit 53a configured to control a voltage supplied to the magnetron 42 by a power supply 43. Further, the voltage control circuit 53a includes a load control device configured to supply, to the magnetron 42, a voltage corresponding to a power calculated by adding a power calculated based on the power of the reflected wave measured by the detector 54b to the power of the traveling wave measured by the detector 54a.

Abstract: Provided are a novel sex pheromone composition of peach fruit moth which is expected to be used in emergence forecast, mass trapping and mating disruption and has higher attractiveness than that of conventional sex pheromone compositions; and a sex attractant, a mating disruptant and a control method comprising the novel sex pheromone composition as an active ingredient. Specifically provided are a novel sex pheromone composition of peach fruit moth comprising (Z)-7-tricosene and (Z)-13-eicosen-10-one, a sex attractant and a mating disruptant comprising this sex pheromone composition, and a method for controlling peach fruit moth using this sex pheromone composition.