Patents by Inventor Kazunori Kamada
Kazunori Kamada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240099038Abstract: A display apparatus having a photoelectric conversion function with high sensitivity is provided. The light extraction efficiency of the display apparatus is increased. The display apparatus includes a light-emitting device, a light-emitting and light-receiving device, a first lens, and a second lens. The light-emitting device has a function of emitting light of a first color. The light-emitting and light-receiving device has a function of emitting light of a second color and a function of receiving light of the first color and converting it into an electric signal. The light emitted by the light-emitting device is emitted to the outside of the display apparatus through the first lens. Light enters the light-emitting and light-receiving device from the outside of the display apparatus through the second lens.Type: ApplicationFiled: October 5, 2020Publication date: March 21, 2024Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Daisuke Kubota, Taisuke KAMADA, Ryo HATSUMI, Koji KUSUNOKI, Kazunori WATANABE, Susumu KAWASHIMA
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Patent number: 11670687Abstract: A gallium nitride substrate comprising a first main surface and a second main surface opposite thereto, wherein the first main surface is a non-polar or semi-polar plane, a dislocation density measured by a room-temperature cathode luminescence method in the first main surface is 1×104 cm?2 or less, and an averaged dislocation density measured by a room-temperature cathode luminescence method in an optional square region sizing 250 ?m×250 ?m in the first main plan is 1×106 cm?2 or less.Type: GrantFiled: June 19, 2020Date of Patent: June 6, 2023Assignee: MITSUBISHI CHEMICAL CORPORATIONInventors: Yusuke Tsukada, Shuichi Kubo, Kazunori Kamada, Hideo Fujisawa, Tatsuhiro Ohata, Hirotaka Ikeda, Hajime Matsumoto, Yutaka Mikawa
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Patent number: 11664428Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10?5 ? or less is observed.Type: GrantFiled: April 23, 2021Date of Patent: May 30, 2023Assignee: Mitsubishi Chemical CorporationInventors: Satoru Nagao, Yusuke Tsukada, Kazunori Kamada, Shuichi Kubo, Hirotaka Ikeda, Kenji Fujito, Hideo Fujisawa, Yutaka Mikawa, Tae Mochizuki
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Publication number: 20220033992Abstract: A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 ?m, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth.Type: ApplicationFiled: September 27, 2021Publication date: February 3, 2022Applicant: MITSUBISHI CHEMICAL CORPORATIONInventors: Yutaka MIKAWA, Hideo FUJISAWA, Kazunori KAMADA, Hirobumi NAGAOKA, Shinichiro KAWABATA, Yuji KAGAMITANI
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Patent number: 11162190Abstract: A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 ?m, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth.Type: GrantFiled: October 28, 2019Date of Patent: November 2, 2021Assignee: MITSUBISHI CHEMICAL CORPORATIONInventors: Yutaka Mikawa, Hideo Fujisawa, Kazunori Kamada, Hirobumi Nagaoka, Shinichiro Kawabata, Yuji Kagamitani
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Publication number: 20210273058Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10?5 ? or less is observed.Type: ApplicationFiled: April 23, 2021Publication date: September 2, 2021Applicant: Mitsubishi Chemical CorporationInventors: Satoru NAGAO, Yusuke TSUKADA, Kazunori KAMADA, Shuichi KUBO, Hirotaka IKEDA, Kenji FUJITO, Hideo FUJISAWA, Yutaka MIKAWA, Tae MOCHIZUKI
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Patent number: 11038024Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10?5 ? or less is observed.Type: GrantFiled: June 18, 2019Date of Patent: June 15, 2021Assignee: Mitsubishi Chemical CorporationInventors: Satoru Nagao, Yusuke Tsukada, Kazunori Kamada, Shuichi Kubo, Hirotaka Ikeda, Kenji Fujito, Hideo Fujisawa, Yutaka Mikawa, Tae Mochizuki
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Patent number: 11031475Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10 ?5 ? or less is observed.Type: GrantFiled: September 18, 2019Date of Patent: June 8, 2021Assignee: Mitsubishi Chemical CorporationInventors: Satoru Nagao, Yusuke Tsukada, Kazunori Kamada, Shuichi Kubo, Hirotaka Ikeda, Kenji Fujito, Hideo Fujisawa, Yutaka Mikawa, Tae Mochizuki
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Patent number: 10995421Abstract: An object of the present invention is to provide a crystal of a nitride of a Group-13 metal on the Periodic Table which has good crystallinity and has no crystal strain, and to provide a production method for the crystal. The crystal of a nitride of a Group-13 metal on the Periodic Table of the present invention, comprises oxygen atom and hydrogen atom in the crystal and has a ratio of a hydrogen concentration to an oxygen concentration therein of from 0.5 to 4.5.Type: GrantFiled: March 8, 2019Date of Patent: May 4, 2021Assignee: MITSUBISHI CHEMICAL CORPORATIONInventors: Yutaka Mikawa, Hideo Namita, Hirotaka Ikeda, Kazunori Kamada, Hideo Fujisawa, Atsuhiko Kojima
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Publication number: 20200321438Abstract: A gallium nitride substrate comprising a first main surface and a second main surface opposite thereto, wherein the first main surface is a non-polar or semi-polar plane, a dislocation density measured by a room-temperature cathode luminescence method in the first main surface is 1×104 cm?2 or less, and an averaged dislocation density measured by a room-temperature cathode luminescence method in an optional square region sizing 250 ?m×250 ?m in the first main plan is 1×106 cm?2 or less.Type: ApplicationFiled: June 19, 2020Publication date: October 8, 2020Applicant: MITSUBISHI CHEMICAL CORPORATIONInventors: Yusuke Tsukada, Shuichi Kubo, Kazunori Kamada, Hideo Fujisawa, Tatsuhiro Ohata, Hirotaka Ikeda, Hajime Matsumoto, Yutaka Mikawa
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Patent number: 10734485Abstract: The main purpose of the present invention is to provide: a nonpolar or semipolar GaN substrate, in which a nitride semiconductor crystal having a low stacking fault density can be epitaxially grown on the main surface of the substrate, and a technique required for the production of the substrate. This invention provides: a method for manufacturing an M-plane GaN substrate comprising; forming a mask pattern having a line-shaped opening parallel to an a-axis of a C-plane GaN substrate on an N-polar plane of the C-plane GaN substrate, growing a plane-shape GaN crystal of which thickness direction is an m-axis direction from the opening of the mask pattern by an ammonotharmal method, and cutting out the M-plane GaN substrate from the plane-shape GaN crystal.Type: GrantFiled: March 29, 2017Date of Patent: August 4, 2020Assignee: MITSUBISHI CHEMICAL CORPORATIONInventors: Yusuke Tsukada, Shuichi Kubo, Kazunori Kamada, Hideo Fujisawa, Tatsuhiro Ohata, Hirotaka Ikeda, Hajime Matsumoto, Yutaka Mikawa
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Patent number: 10655244Abstract: A disc-like GaN substrate is a substrate produced by a tiling method and having an angel between the normal line and m-axis on the main surface of the substrate of 0 to 20° inclusive and a diameter of 45 to 55 mm, to 4 or less. In a preferred embodiment, a disc-like GaN substrate has a first main surface and a second main surface that is opposite to the first main surface, and which has an angle between the normal line and m-axis on the first main surface of 0 to 20° inclusive and a diameter of 45 mm or more. The disc-like GaN substrate comprises at least four crystalline regions each being exposed to both of the first main surface and the second main surface, wherein the four crystalline regions are arranged in line along the direction of the orthogonal projection of c-axis on the first main surface.Type: GrantFiled: July 13, 2018Date of Patent: May 19, 2020Assignee: MITSUBISHI CHEMICAL CORPORATIONInventors: Yusuke Tsukada, Satoru Nagao, Kazunori Kamada, Masayuki Tashiro, Kenji Fujito, Hideo Fujisawa, Yutaka Mikawa, Tetsuharu Kajimoto, Takashi Fukada
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Publication number: 20200109489Abstract: A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 ?m, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth.Type: ApplicationFiled: October 28, 2019Publication date: April 9, 2020Applicant: MITSUBISHI CHEMICAL CORPORATIONInventors: Yutaka MIKAWA, Hideo FUJISAWA, Kazunori KAMADA, Hirobumi NAGAOKA, Shinichiro KAWABATA, Yuji KAGAMITANI
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Publication number: 20200013860Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10?5 ? or less is observed.Type: ApplicationFiled: September 18, 2019Publication date: January 9, 2020Applicant: Mitsubishi Chemical CorporationInventors: Satoru NAGAO, Yusuke Tsukada, Kazunori Kamada, Shuichi Kubo, Hirotaka Ikeda, Kenji Fujito, Hideo Fujisawa, Yutaka Mikawa, Tae Mochizuki
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Patent number: 10526726Abstract: A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 ?m, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth.Type: GrantFiled: November 9, 2016Date of Patent: January 7, 2020Assignee: MITSUBISHI CHEMICAL CORPORATIONInventors: Yutaka Mikawa, Hideo Fujisawa, Kazunori Kamada, Hirobumi Nagaoka, Shinichiro Kawabata, Yuji Kagamitani
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Patent number: 10475887Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10?5 ? or less is observed.Type: GrantFiled: February 5, 2016Date of Patent: November 12, 2019Assignee: Mitsubishi Chemical CorporationInventors: Satoru Nagao, Yusuke Tsukada, Kazunori Kamada, Shuichi Kubo, Hirotaka Ikeda, Kenji Fujito, Hideo Fujisawa, Yutaka Mikawa, Tae Mochizuki
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Publication number: 20190312111Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10?5 ? or less is observed.Type: ApplicationFiled: June 18, 2019Publication date: October 10, 2019Applicant: Mitsubishi Chemical CorporationInventors: Satoru NAGAO, Yusuke TSUKADA, Kazunori KAMADA, Shuichi KUBO, Hirotaka IKEDA, Kenji FUJITO, Hideo FUJISAWA, Yutaka MIKAWA, Tae MOCHIZUKI
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Publication number: 20190203379Abstract: An object of the present invention is to provide a crystal of a nitride of a Group-13 metal on the Periodic Table which has good crystallinity and has no crystal strain, and to provide a production method for the crystal. The crystal of a nitride of a Group-13 metal on the Periodic Table of the present invention, comprises oxygen atom and hydrogen atom in the crystal and has a ratio of a hydrogen concentration to an oxygen concentration therein of from 0.5 to 4.5.Type: ApplicationFiled: March 8, 2019Publication date: July 4, 2019Applicant: MITSUBISHI CHEMICAL CORPORATIONInventors: Yutaka Mikawa, Hideo Namita, Hirotaka Ikeda, Kazunori Kamada, Hideo Fujisawa, Atsuhiko Kojima
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Patent number: 10309038Abstract: An object of the present invention is to provide a crystal of a nitride of a Group-13 metal on the Periodic Table which has good crystallinity and has no crystal strain, and to provide a production method for the crystal. The crystal of a nitride of a Group-13 metal on the Periodic Table of the present invention, comprises oxygen atom and hydrogen atom in the crystal and has a ratio of a hydrogen concentration to an oxygen concentration therein of from 0.5 to 4.5.Type: GrantFiled: December 14, 2017Date of Patent: June 4, 2019Assignee: MITSUBISHI CHEMICAL CORPORATIONInventors: Yutaka Mikawa, Hideo Namita, Hirotaka Ikeda, Kazunori Kamada, Hideo Fujisawa, Atsuhiko Kojima
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Publication number: 20180334758Abstract: A disc-like GaN substrate is a substrate produced by a tiling method and having an angel between the normal line and m-axis on the main surface of the substrate of 0 to 20° inclusive and a diameter of 45 to 55 mm, to 4 or less. In a preferred embodiment, a disc-like GaN substrate has a first main surface and a second main surface that is opposite to the first main surface, and which has an angle between the normal line and m-axis on the first main surface of 0 to 20° inclusive and a diameter of 45 mm or more. The disc-like GaN substrate comprises at least four crystalline regions each being exposed to both of the first main surface and the second main surface, wherein the four crystalline regions are arranged in line along the direction of the orthogonal projection of c-axis on the first main surface.Type: ApplicationFiled: July 13, 2018Publication date: November 22, 2018Applicant: MITSUBISHI CHEMICAL CORPORATIONInventors: Yusuke TSUKADA, Satoru NAGAO, Kazunori KAMADA, Masayuki TASHIRO, Kenji FUJITO, Hideo FUJISAWA, Yutaka MIKAWA, Tetsuharu KAJIMOTO, Takashi FUKADA