Patents by Inventor Kazunori Kijima

Kazunori Kijima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Sintered silicon carbide body with high thermal conductivity and process of producing the same
    Patent number: 5094985
    Abstract: Disclosed is a sintered silicon carbide body with a high thermal conductivity which has a thermal conductivity of not less than 150 W/m.multidot.K, which is produced by(a) mixing(1) a first silicon carbide powder having a mean grain size of from 0.1 to 10 .mu.m with(2) a second silicon carbide powder having a mean grain size of not greater than 0.1 .mu.m prepared by(2-1) introducing a starting gas composed of a silane compound or silicon halide and a hydrocarbon into a plasma of a non-oxidative atmosphere, and(2-2) conducting gas phase reaction between the silane compound or silicon halide and the hydrocarbon while controlling the pressure of the reaction system within the range of from less than 1 atom to 0.1 torr, and(3) optionally, a carbon powder which is required for reducing oxides contained in both the first and second silicon carbide powders,(b) optioanlly reducing the oxides with the carbon, and(c) heating the resulting mixture for sintering. Also, processes of producing the same are disclosed.
    Type: Grant
    Filed: November 6, 1989
    Date of Patent: March 10, 1992
    Assignees: Kazunori Kijima Kyoto, Sumitomo Cement Co., Ltd.
    Inventors: Kazunori Kijima, Eiki Arai, Youichi Miyazawa, Mikio Konishi, Ken Kato
  • Highly pure sintered carbide with high electric conductivity and process of producing the same
    Patent number: 5093039
    Abstract: Disclosed is an electrically conductive sintered silicon carbide body having an electric resistivity of not higher than 1 .OMEGA..multidot.cm, which is produced by(a) mixing(1) a first silicon carbide powder having a mean grain size of from 0.1 to 10 .mu.m with(2) a second silicon carbide powder having a mean grain size of not greater than 0.1 .mu.m prepared by(2-1) introducing a starting gas composed of a silane compound of silicon halide and a hydrocarbon into a plasma of a non-oxidative atmosphere, and(2-2) conducting gas phase reaction between the silane compound or silicon halide and the hydrocarbon while controlling the pressure of the reaction system within the range of from less than 1 atom to 0.1 torr, and(3) optionally, a carbon powder which is required for reducing oxides contained in both the first and second silicon carbide powders,(b) optionally reducing the oxides with the carbon, and(c) heating the resulting mixture for sintering. Also, processes of producing the same are disclosed.
    Type: Grant
    Filed: November 6, 1989
    Date of Patent: March 3, 1992
    Assignees: Kazunori Kijima, Sumitomo Cement Co., Ltd.
    Inventors: Kazunori Kijima, Eiki Arai, Youichi Miyazawa, Mikio Konishi, Ken Kato