Abstract: Provided is an aluminum-diamond-based composite which can be processed with high dimensional accuracy. The flat-plate-shaped aluminum-diamond-based composite is coated with a surface layer of which the entire surface has an average film thickness of 0.01-0.2 mm and which contains not less than 80 volume % of a metal containing an aluminum.

Abstract: A heat dissipation component for a semiconductor element includes: a composite part containing 50-80 vol % diamond powder with the remainder having metal including aluminum, the diamond powder having a particle diameter volume distribution first peak at 5-25 ?m and a second peak at 55-195 ?m. A ratio between a volume distribution area at particle diameters of 1-35 ?m and a volume distribution area at particle diameters of 45-205 ?m is 1:9 to 4:6; surface layers on both composite part principal surfaces, each of the surface layers containing 80 vol % or more metal including aluminum and having a film thickness of 0.03-0.2 mm; and a crystalline Ni layer and an Au layer on at least one of the surface layers, the crystalline Ni layer having a film thickness of 0.5-6.5 ?m, and the Au layer having a film thickness of 0.05 ?m or larger.

Abstract: Provided is an aluminum-diamond-based composite which can be processed with high dimensional accuracy. The flat-plate-shaped aluminum-diamond-based composite is coated with a surface layer of which the entire surface has an average film thickness of 0.01-0.2 mm and which contains not less than 80 volume % of a metal containing an aluminum.

Abstract: To provide an aluminum-silicon carbide composite which is suitable for use as a power-module base plate. An aluminum-silicon carbide composite wherein a peripheral portion having, as a main component thereof, an aluminum-ceramic fiber composite containing ceramic fibers having an average fiber diameter of at most 20 ?m and an average aspect ratio of at least 100, is provided on the periphery of a flat plate-shaped aluminum-silicon carbide composite having a plate thickness of 2 to 6 mm formed by impregnating, with a metal containing aluminum, a porous silicon carbide molded body having a silicon carbide content of 50 to 80 vol %, and wherein the proportion of the aluminum-ceramic fiber composite occupied in the peripheral portion is at least 50 area %.

Abstract: A heat dissipation component for a semiconductor element includes: a composite part containing 50-80 vol % diamond powder with the remainder having metal including aluminum, the diamond powder having a particle diameter volume distribution first peak at 5-25 ?m and a second peak at 55-195 ?m. A ratio between a volume distribution area at particle diameters of 1-35 ?m and a volume distribution area at particle diameters of 45-205 ?m is 1:9 to 4:6; surface layers on both composite part principal surfaces, each of the surface layers containing 80 vol % or more metal including aluminum and having a film thickness of 0.03-0.2 mm; and a crystalline Ni layer and an Au layer on at least one of the surface layers, the crystalline Ni layer having a film thickness of 0.5-6.5 ?m, and the Au layer having a film thickness of 0.05 ?m or larger.

Abstract: To provide an aluminum-silicon carbide composite which is suitable for use as a power-module base plate. An aluminum-silicon carbide composite wherein a peripheral portion having, as a main component thereof, an aluminum-ceramic fiber composite containing ceramic fibers having an average fiber diameter of at most 20 ?m and an average aspect ratio of at least 100, is provided on the periphery of a flat plate-shaped aluminum-silicon carbide composite having a plate thickness of 2 to 6 mm formed by impregnating, with a metal containing aluminum, a porous silicon carbide molded body having a silicon carbide content of 50 to 80 vol %, and wherein the proportion of the aluminum-ceramic fiber composite occupied in the peripheral portion is at least 50 area %.