Abstract: In a waiting period in which a transmission state of an electrodeposition element is held to be a predetermined transmission state such as a full-transmission state, based on a frequency, a duty ratio, a first voltage and a second voltage set in advance, a transmittance holding pulse generating section generates a pattern of a transmittance holding pulse having a cycle corresponding to the frequency and continuously outputs the pattern of the transmittance holding pulse to the electrodeposition element. In a light reduction period in which the transmission state of the electrodeposition element is held to be a light-reduced state (transmittance is lowered), the deposition start voltage generating section applies a third voltage, which is a preset deposition start voltage, to the electrodeposition element. Consequently, metal ions are easily deposited, enabling increasing a speed of dispersion of the metal ions.

Abstract: An X-ray sensor according to the present invention includes: a light-transmissive substrate (17); a light-transmissive electrode (21) formed on one surface of the light-transmissive substrate (17); and a photoconductive film (18) including a hole injection blocking layer (22), a field buffer layer (23), a hole trap layer (24), a photoconductive sensitive layer (25) having a charge-multiplying function, and an electron injection blocking layer (26), the layers being sequentially provided on the one surface of the light-transmissive substrate (17) having the light-transmissive electrode (21). The field buffer layer (23) is larger in thickness than a layer composed of the light-transmissive electrode (21) and the hole injection blocking layer (22).

Abstract: A camera device having favorable multiplication characteristics (quantum efficiency) as well as improved sensitivity in a visible light region (especially the region on the red side) and a method of manufacturing the same are provided. The camera device includes a hole injection stop layer, a first photoelectric converting layer including selenium, a second photoelectric converting layer having spectral sensitivity characteristics which are different from those of the first photoelectric converting layer, a third photoelectric converting layer including selenium, and an electron injection stop layer. As a result, it is possible to improve multiplication characteristics (quantum efficiency) and to improve the sensitivity in the visible light region (especially the region on the red side) simultaneously.

Abstract: A camera device having favorable multiplication characteristics (quantum efficiency) as well as improved sensitivity in a visible light region (especially the region on the red side) and a method of manufacturing the same are provided. The camera device includes a hole injection stop layer, a first photoelectric converting layer including selenium, a second photoelectric converting layer having spectral sensitivity characteristics which are different from those of the first photoelectric converting layer, a third photoelectric converting layer including selenium, and an electron injection stop layer. As a result, it is possible to improve multiplication characteristics (quantum efficiency) and to improve the sensitivity in the visible light region (especially the region on the red side) simultaneously.