Patents by Inventor Kazunori Oikawa

Kazunori Oikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7955943
    Abstract: In one embodiment, a high voltage element is formed overlying a doped semiconductor region that can be depleted during the operation of the high voltage element includes a conductor overlying a space in a resistor.
    Type: Grant
    Filed: September 30, 2009
    Date of Patent: June 7, 2011
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Jefferson W. Hall, Mohammed Tanvir Quddus, Richard S. Burton, Kazunori Oikawa, George Chang
  • Publication number: 20100022064
    Abstract: In one embodiment, a high voltage element is formed overlying a doped semiconductor region that can be depleted during the operation of the high voltage element includes a conductor overlying a space in a resistor.
    Type: Application
    Filed: September 30, 2009
    Publication date: January 28, 2010
    Inventors: Jefferson W. Hall, Mohammed Tanvir Quddus, Richard S. Burton, Kazunori Oikawa, George Chang