Abstract: The present invention is a cutting and processing method for cutting semiconductor materials such as silicon ingots, or machining grooves therein, using a wire saw, a purpose whereof is to obtain a method wherewith high-precision processed products can be stably obtained. By performing cutting processing using a slurry that is either a mixture of free abrasive particles and an oil base such as a mineral oil or a mixture of free abrasive particles and an aqueous solution base such as ethylene glycol material, the effects of improving cuttability, reducing residual processing distortion, suppressing process stress, and suppressing cutting heat can be enhanced, and it is possible to carry on cutting while eliminating the process stress (residual distortion) produced by cutting, and thus to cut low-distortion wafers.

Abstract: An edge-rounded portion mirror finishing process, which results in low deformation on a wafer, which has undergone a slicing process including a grinding process in which double-sided grinding is performed on the. sliced wafer; a finishing grinding process in which high-precision and low-deformation finish grinding is performed on the wafer; an edge rounding process in which low-deformation grinding is performed on an edge-rounded portion of the wafer; a two-sided primary polishing process in which primary polishing is performed on both sides of the edge-rounded wafer; a one-sided finish polishing process in which finish polishing is performed on one side of the wafer that has been primary polished on both sides; and a process in which finish polishing is performed on the edge-rounded portion of the above-mentioned wafer.

Abstract: An object of the present invention is to provide a wire saw cutting method that is a method for cutting a plurality of silicon monocrystal ingots into wafers with a wire saw, wherewith high-precision cutting processing is possible, reducing wafer thickness and warping defects, etc. By shifting the positions of pieces of work in the cutting feed direction, providing time differentials to the cuts, and cutting the work sequentially, the work cut first is given the role of a wire guide, making it possible to stabilize the path of the wire. Thus cuts can be made in other ingots with the wire path stabilized, it becomes possible to reduce thickness and warping defects, and processing is made possible wherewith good wafer quality and stable yield are realized.

Abstract: In the work crystal orientation adjusting method, the crystal orientations of a work 22 in the rotational direction and in the horizontal direction thereof are measured by an orientation measuring device 76. In accordance with the measured value of the crystal orientation of the work 22 in the rotational direction, the work 22 is rotated about the axis thereof to thereby adjust the crystal orientation of the work 22 in the rotational direction. On the outer surface of the work 22, there are put marks M1 and M2 indicating reference positions for adhesion of an auxiliary plate B which is used to cut the work 22. The auxiliary plate B is adhered to the outer peripheral surface of the work 22 based on the marks M1 and M2. A work mounting plate 53 is mounted onto a support base 40 to thereby support the work 22 on the support base 40.