Patents by Inventor Kazunori Torii

Kazunori Torii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070122964
    Abstract: A semiconductor device is equipped with a step-up circuit having a series of multiple charge pump units. Each of the units has a well separation type MOS transistor. The separation well of the transistor is coupled to a high potential so as to form double reverse biases between the N-type well and a P-type substrate and between the N-type well and a P-type well. This permits the threshold Vth of the MOS transistor to be held at low level. The units are provided with a clock whose current supply capability is limited until a predetermined condition (that a predetermined period of time has elapsed after the onset of the step-up circuit by a startup signal or that the output voltage has reached a predetermined level). This limitation of the clock facilitates suppression of power consumption by the step-up circuit during a startup, thereby reducing changes in amplitude of a supply voltage.
    Type: Application
    Filed: January 30, 2007
    Publication date: May 31, 2007
    Applicant: ROHM CO., LTD.
    Inventors: Michio NAKAGAWA, Kazuo SATO, Hiromi UENOYAMA, Yasuyuki OHNISHI, Kazunori TORII
  • Patent number: 7190211
    Abstract: A semiconductor device is equipped with a step-up circuit having a series of multiple charge pump units. Each of the units has a well separation type MOS transistor. The separation well of the transistor is coupled to a high potential so as to form double reverse biases between the N-type well and a P-type substrate and between the N-type well and a P-type well. This permits the threshold Vth of the MOS transistor to be held at low level. The units are provided with a clock whose current supply capability is limited until a predetermined condition (that a predetermined period of time has elapsed after the onset of the step-up circuit by a startup signal or that the output voltage has reached a predetermined level). This limitation of the clock facilitates suppression of power consumption by the step-up circuit during a startup, thereby reducing changes in amplitude of a supply voltage.
    Type: Grant
    Filed: February 15, 2005
    Date of Patent: March 13, 2007
    Assignee: Rohm Co., Ltd.
    Inventors: Michio Nakagawa, Kazuo Sato, Hiromi Uenoyama, Yasuyuki Ohnishi, Kazunori Torii
  • Publication number: 20050134362
    Abstract: A semiconductor device is equipped with a step-up circuit having a series of multiple charge pump units. Each of the units has a well separation type MOS transistor. The separation well of the transistor is coupled to a high potential so as to form double reverse biases between the N-type well and a P-type substrate and between the N-type well and a P-type well. This permits the threshold Vth of the MOS transistor to be held at low level. The units are provided with a clock whose current supply capability is limited until a predetermined condition (that a predetermined period of time has elapsed after the onset of the step-up circuit by a startup signal or that the output voltage has reached a predetermined level). This limitation of the clock facilitates suppression of power consumption by the step-up circuit during a startup, thereby reducing changes in amplitude of a supply voltage.
    Type: Application
    Filed: February 15, 2005
    Publication date: June 23, 2005
    Inventors: Michio Nakagawa, Kazuo Sato, Hiromi Uenoyama, Yasuyuki Ohnishi, Kazunori Torii
  • Patent number: 6888399
    Abstract: A semiconductor device is equipped with a step-up circuit having a series of multiple charge pump units. Each of the units has a well separation type MOS transistor. The separation well of the transistor is coupled to a high potential so as to form double reverse biases between the N-type well and a P-type substrate and between the N-type well and a P-type well. This permits the threshold Vth of the MOS transistor to be held at low level. The units are provided with a clock whose current supply capability is limited until a predetermined condition (that a predetermined period of time has elapsed after the onset of the step-up circuit by a startup signal or that the output voltage has reached a predetermined level). This limitation of the clock facilitates suppression of power consumption by the step-up circuit during a startup, thereby reducing changes in amplitude of a supply voltage.
    Type: Grant
    Filed: February 4, 2003
    Date of Patent: May 3, 2005
    Assignee: Rohm Co., Ltd.
    Inventors: Michio Nakagawa, Kazuo Sato, Hiromi Uenoyama, Yasuyuki Ohnishi, Kazunori Torii
  • Publication number: 20030151449
    Abstract: A semiconductor device is equipped with a step-up circuit having a series of multiple charge pump units. Each of the units has a well separation type MOS transistor. The separation well of the transistor is coupled to a high potential so as to form double reverse biases between the N-type well and a P-type substrate and between the N-type well and a P-type well. This permits the threshold Vth of the MOS transistor to be held at low level. The units are provided with a clock whose current supply capability is limited until a predetermined condition (that a predetermined period of time has elapsed after the onset of the step-up circuit by a startup signal or that the output voltage has reached a predetermined level). This limitation of the clock facilitates suppression of power consumption by the step-up circuit during a startup, thereby reducing changes in amplitude of a supply voltage.
    Type: Application
    Filed: February 4, 2003
    Publication date: August 14, 2003
    Applicant: ROHM CO., LTD.
    Inventors: Michio Nakagawa, Kazuo Sato, Hiromi Uenoyama, Yasuyuki Ohnishi, Kazunori Torii