Abstract: A light-guiding plate includes a resin base having a parallelism P of 5 ?m or less per an area of 50×100 mm2.

Abstract: This semiconductor device manufacturing method comprises the steps of: forming a thick gate oxide film (thick oxide film) in a first region of a substrate, forming a thin gate oxide film (thin oxide layer) in a second region, and then, applying oxynitridation to these gate oxide films; forming gate electrodes to 1d on these gate oxide films; and implanting an ion that contains nitrogen or nitrogen atoms into at least one part of an interface between the hick gate oxide film (thick oxide film) and the substrate before or after the step of forming the gate electrodes, thereby forming a highly oxy-nitrided region. In this manner, in a semiconductor device in which there coexist a MISFET having a thin gate insulation film and a MISFET having a thick gate insulation film, hot carrier reliability of the MISFET having the thick gate insulation film is improved.

Abstract: A method enabling to form a lubricating layer on a work piece and a device to form the same in a simple blast processing are provided, in which injection materials can be injected at higher speed than the conventional way, thereby even a small specific gravity injection materials such as graphite and the like can be used for blast operation. In an injection nozzle of a direct pressure type blast processing device which injects a mixture of injection materials and compressed gas, an aperture which is formed in an axial direction of the injection nozzle has such shape that meets the following conditional equations (1) and (2) in a cross section orthogonal to the axial direction at an arbitrary distance x away from the entrance of the injection nozzle.

Abstract: This semiconductor device manufacturing method comprises the steps of: forming a thick gate oxide film (thick oxide film) in a first region of a substrate, forming a thin gate oxide film (thin oxide layer) in a second region, and then, applying oxynitridation to these gate oxide films; forming gate electrodes to 1d on these gate oxide films; and implanting an ion that contains nitrogen or nitrogen atoms into at least one part of an interface between the hick gate oxide film (thick oxide film) and the substrate before or after the step of forming the gate electrodes, thereby forming a highly oxy-nitrided region. In this manner, in a semiconductor device in which there coexist a MISFET having a thin gate insulation film and a MISFET having a thick gate insulation film, hot carrier reliability of the MISFET having the thick gate insulation film is improved.

Abstract: This semiconductor device manufacturing method comprises the steps of: forming a thick gate oxide film (thick oxide film) in a first region of a substrate, forming a thin gate oxide film (thin oxide layer) in a second region, and then, applying oxynitridation to these gate oxide films; forming gate electrodes to 1d on these gate oxide films; and implanting an ion that contains nitrogen or nitrogen atoms into at least one part of an interface between the hick gate oxide film (thick oxide film) and the substrate before or after the step of forming the gate electrodes, thereby forming a highly oxy-nitrided region. In this manner, in a semiconductor device in which there coexist a MISFET having a thin gate insulation film and a MISFET having a thick gate insulation film, hot carrier reliability of the MISFET having the thick gate insulation film is improved.

Abstract: Disclosed is a position error evaluating method of a moving device, which includes the following steps. Specifically, in a moving device which moves a movable body in two axial directions or in three axial directions orthogonal to each other, a straightness error curve indicating a state of change in a position error of the movable body along a uniaxial direction out of predetermined two axial directions is obtained by a sequential two-point method, the position error being related to a direction orthogonal to the predetermined two axial directions out of the biaxial or three axial directions. Then, the above step is repeated for the other uniaxial direction out of the two axial directions.

Abstract: A programmable controller has an overcurrent detection portion, an overcurrent indication portion and a transistor for interrupting a load current at the time of occurrence of an overcurrent are provided in an output circuit portion of the programmable controller. An overcurrent detection resistor is provided in the output transistor circuit, and a detected voltage across the resistor is compared with a reference voltage in an overcurrent detection circuit to judge an overcurrent. If an overcurrent is recognized, the overcurrent indication portion is operated, and the base current of the output transistor circuit is controlled to perform protection of the output circuit from the overcurrent. Accordingly, when an overcurrent is flowing and an input signal is in ON state, the output transistor is turned OFF automatically and, the overcurrent state is showed to a user.

Abstract: A programmable controller has an overcurrent detection portion, an overcurrent indication portion and a transistor for interrupting a load current at the time of occurrence of an overcurrent are provided in an output circuit portion of the programmable controlled. An overcurrent detection resistor is provided in the output transistor circuit, and a detected voltage across the resistor is compared with a reference voltage in an overcurrent detection circuit to judge an overcurrent. If an overcurrent is recognized, the overcurrent indication portion is operated, and the base current of the output transistor circuit is controlled to perform protection of the output circuit from the overcurrent. Accordingly, when an overcurrent is flowing and an input signal is in ON state, the output transistor is turned OFF automatically and, the overcurrent state is showed to a user.

Abstract: This semiconductor device manufacturing method comprises the steps of: forming a thick gate oxide film (thick oxide film) in a first region of a substrate, forming a thin gate oxide film (thin oxide layer) in a second region, and then, applying oxynitridation to these gate oxide films; forming gate electrodes to 1d on these gate oxide films; and implanting an ion that contains nitrogen or nitrogen atoms into at least one part of an interface between the hick gate oxide film (thick oxide film) and the substrate before or after the step of forming the gate electrodes, thereby forming a highly oxy-nitrided region. In this manner, in a semiconductor device in which there coexist a MISFET having a thin gate insulation film and a MISFET having a thick gate insulation film, hot carrier reliability of the MISFET having the thick gate insulation film is improved.

Abstract: Disclosed is a position error evaluating method of a moving device, which includes the following steps. Specifically, in a moving device which moves a movable body in two axial directions or in three axial directions orthogonal to each other, a straightness error curve indicating a state of change in a position error of the movable body along a uniaxial direction out of predetermined two axial directions is obtained by a sequential two-point method, the position error being related to a direction orthogonal to the predetermined two axial directions out of the biaxial or three axial directions. Then, the above step is repeated for the other uniaxial direction out of the two axial directions.

Abstract: This semiconductor device manufacturing method comprises the steps of: forming a thick gate oxide film (thick oxide film) in a first region of a substrate, forming a thin gate oxide film (thin oxide layer) in a second region, and then, applying oxynitridation to these gate oxide films; forming gate electrodes to 1d on these gate oxide films; and implanting an ion that contains nitrogen or nitrogen atoms into at least one part of an interface between the hick gate oxide film (thick oxide film) and the substrate before or after the step of forming the gate electrodes, thereby forming a highly oxy-nitrided region. In this manner, in a semiconductor device in which there coexist a MISFET having a thin gate insulation film and a MISFET having a thick gate insulation film, hot carrier reliability of the MISFET having the thick gate insulation film is improved.

Abstract: A programmable controller has an overcurrent detection portion, an overcurrent indication portion and a transistor for interrupting a load current at the time of occurrence of an overcurrent are provided in an output circuit portion of the programmable controller. An overcurrent detection resistor is provided in the output transistor circuit, and a detected voltage across the resistor is compared with a reference voltage in an overcurrent detection circuit to judge an overcurrent. If an overcurrent is recognized, the overcurrent indication portion is operated, and the base current of the output transistor circuit is controlled to perform protection of the output circuit from the overcurrent. Accordingly, when an overcurrent is flowing and an input signal is in ON state, the output transistor is turned OFF automatically and, the overcurrent state is showed to a user.

Abstract: A programmable controller has an overcurrent detection portion, an overcurrent indication portion and a transistor for interrupting a load current at the time of occurrence of an overcurrent are provided in an output circuit portion of the programmable controller. An overcurrent detection resistor is provided in the output transistor circuit, and a detected voltage across the resistor is compared with a reference voltage in an overcurrent detection circuit to judge an overcurrent. If an overcurrent is recognized, the overcurrent indication portion is operated, and the base current of the output transistor circuit is controlled to perform protection of the output circuit from the overcurrent. Accordingly, when an overcurrent is flowing and an input signal is in ON state, the output transistor is turned OFF automatically and, the overcurrent state is showed to a user.

Abstract: An oxide type solid lubricant is formed of a powder of a fired composite ceramic material resulting from heating a mixture of BaZrO.sub.3 and Cr.sub.2 O.sub.3 powders in which the Cr.sub.2 O.sub.3 content is up to 80% by weight.

Abstract: An oxide type solid lubricant is made up of a sintered composite ceramic mass of Cr.sub.2 O.sub.3 and Na.sub.2 ZrO.sub.3 and has a Cr.sub.2 O.sub.3 content in the range of from 20 to 50% by weight.

Abstract: A built-in insulating element for electrically insulating a process portion from a control object and for transmitting a process result to the control object is provided in the output portion for transmitting the process result of a sequence controller to the control object. Further, a noise preventive element is provided in the output portion for preventing a noise voltage from coming in from the control object side and damaging the insulating element.

Abstract: Self-lubricating wear-resistant composite materials are produced by blending a metal powder matrix with a combination of molybdenum disulfide and tungsten disulfide powders, compression-molding the blend and then sintering the molding at 800.degree. to 1000.degree.C. When the combination of molybdenum disulfide and tungsten disulfide is blended with a metal powder matrix as described above, the molybdenum disulfide reacts with the metal powder matrix and consequently reinforces the metal matrix and the tungsten disulfide is dispersed as a lubricant element in the resultant composite material, giving rise to a composite material excellent in mechanical strength and lubricating property.