Patents by Inventor Kazuo Aita
Kazuo Aita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10276343Abstract: A method of acquiring an image of an image acquiring region of a sample comprises a first step of irradiating and scanning an ion beam in a first scan pattern on a first scan region of a sample, the scan region including therein the image acquiring region, and a second step of detecting secondary charged particles generated by irradiating and scanning the ion beam on the first scan region of the sample and generating first image data of the image acquiring region. The first and second steps are repeated a plurality of times using different scan patterns on different scan regions that differ from the first scan and the first scan region and from one another, each of the different scan regions including therein the image acquiring region, to generate a plurality of image data of the image acquiring region.Type: GrantFiled: May 17, 2018Date of Patent: April 30, 2019Inventors: Tomokazu Kozakai, Fumio Aramaki, Osamu Matsuda, Kensuke Shiina, Kazuo Aita, Anto Yasaka
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Publication number: 20180269029Abstract: Disclosed herein is a method for acquiring an image, in which an image reducing the influence of electrification of a substrate is easily acquired. The method, in which an image of an image acquiring region is acquired by radiating an ion beam to a sample having a conducting part with a linear edge on a dielectric substrate, includes: performing an equal-width scan caused by the ion beam in a first direction that obliquely intersects the edge and sweep in a second direction intersecting the first direction, and radiating the ion beam to a scan region of a parallelogram shape wider than the image acquiring region; detecting secondary charged particles to generate image data of the scan region; calculating the image data of the scan region to generate image data of the image acquiring region; and displaying the image data of the image acquiring region.Type: ApplicationFiled: May 17, 2018Publication date: September 20, 2018Inventors: Tomokazu KOZAKAI, Fumio ARAMAKI, Osamu MATSUDA, Kensuke SHIINA, Kazuo AITA, Anto YASAKA
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Patent number: 10014157Abstract: A method for acquiring an image, in which an image of an image acquiring region is acquired by radiating an ion beam to a sample having a conducting part with a linear edge on a dielectric substrate, includes performing an equal-width scan of the ion beam in a first direction that obliquely intersects the linear edge and sweep in a second direction intersecting the first direction. The ion beam is sequentially scanned in different patterns on different scan regions of parallelogram shape, each of which includes the image acquiring region. Secondary charged particles are detected to generate image data of all the scan regions, and image data of the scan regions are calculated to generate image data of the image acquiring region. The image data of the image acquiring region are synthesized to display the image data of the image acquiring region.Type: GrantFiled: September 28, 2016Date of Patent: July 3, 2018Assignee: HITACHI HIGH-TECH SCIENCE CORPORATIONInventors: Tomokazu Kozakai, Fumio Aramaki, Osamu Matsuda, Kensuke Shiina, Kazuo Aita, Anto Yasaka
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Patent number: 9793085Abstract: A focused ion beam apparatus is equipped with a gas field ion source that can produce a focused ion beam for a long period of time by stably and continuously emitting ions from the gas field ion source having high luminance, along an optical axis of an ion-optical system for a long period of time. The gas field ion source has an emitter for emitting ions, the emitter having a sharpened end part made of iridium fixed to a cylinder-shaped base part made of dissimilar wire.Type: GrantFiled: January 29, 2016Date of Patent: October 17, 2017Assignee: HITACHI HIGH-TECH SCIENCE CORPORATIONInventors: Anto Yasaka, Tomokazu Kozakai, Osamu Matsuda, Yasuhiko Sugiyama, Kazuo Aita, Fumio Aramaki, Hiroshi Oba
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Patent number: 9773634Abstract: There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus.Type: GrantFiled: January 26, 2017Date of Patent: September 26, 2017Assignee: Hitachi High-Tech Science CorporationInventors: Tomokazu Kozakai, Osamu Matsuda, Yasuhiko Sugiyama, Kazuo Aita, Fumio Aramaki, Anto Yasaka, Hiroshi Oba
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Publication number: 20170148603Abstract: There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus.Type: ApplicationFiled: January 26, 2017Publication date: May 25, 2017Inventors: Tomokazu Kozakai, Osamu Matsuda, Yasuhiko Sugiyama, Kazuo Aita, Fumio Aramaki, Anto Yasaka, Hiroshi Oba
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Publication number: 20170092461Abstract: Disclosed herein is a method for acquiring an image, in which an image reducing the influence of electrification of a substrate is easily acquired. The method, in which an image of an image acquiring region is acquired by radiating an ion beam to a sample having a conducting part with a linear edge on a dielectric substrate, includes: performing an equal-width scan caused by the ion beam in a first direction that obliquely intersects the edge and sweep in a second direction intersecting the first direction, and radiating the ion beam to a scan region of a parallelogram shape wider than the image acquiring region; detecting secondary charged particles to generate image data of the scan region; calculating the image data of the scan region to generate image data of the image acquiring region; and displaying the image data of the image acquiring region.Type: ApplicationFiled: September 28, 2016Publication date: March 30, 2017Inventors: Tomokazu KOZAKAI, Fumio ARAMAKI, Osamu MATSUDA, Kensuke SHIINA, Kazuo AITA, Anto YASAKA
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Patent number: 9583299Abstract: There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus.Type: GrantFiled: August 8, 2014Date of Patent: February 28, 2017Assignee: Hitachi High-Tech Science CorporationInventors: Tomokazu Kozakai, Osamu Matsuda, Yasuhiko Sugiyama, Kazuo Aita, Fumio Aramaki, Anto Yasaka, Hiroshi Oba
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Publication number: 20160322123Abstract: There is provided a repair apparatus including a gas field ion source which includes an ion generation section including a sharpened tip, a cooling unit which cools the tip, an ion beam column which forms a focused ion beam by focusing ions of a gas generated in the gas field ion source, a sample stage which moves while a sample to be irradiated with the focused ion beam is placed thereon, a sample chamber which accommodates at least the sample stage therein, and a control unit which repairs a mask or a mold for nano-imprint lithography, which is the sample, with the focused ion beam formed by the ion beam column. The gas field ion source generates nitrogen ions as the ions, and the tip is constituted by an iridium single crystal capable of generating the ions.Type: ApplicationFiled: June 22, 2016Publication date: November 3, 2016Inventors: Fumio Aramaki, Anto Yasaka, Osamu Matsuda, Yasuhiko Sugiyama, Hiroshi Oba, Tomokazu Kozakai, Kazuo Aita
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Publication number: 20160225574Abstract: Disclosed herein is a focused ion beam apparatus equipped with a gas field ion source that can produce a focused ion beam for a long period of time by stably and continuously emitting ions from the gas field ion source having high luminance, along an optical axis of an ion-optical system for a long period of time. In the focused ion beam apparatus equipped with a gas field ion source having an emitter for emitting ions, the emitter has a shape in which sharpened iridium is fixed to dissimilar wire.Type: ApplicationFiled: January 29, 2016Publication date: August 4, 2016Inventors: Anto YASAKA, Tomokazu KOZAKAI, Osamu MATSUDA, Yasuhiko SUGIYAMA, Kazuo AITA, Fumio ARAMAKI, Hiroshi OBA
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Patent number: 9378858Abstract: There is provided a repair apparatus including a gas field ion source which includes an ion generation section including a sharpened tip, a cooling unit which cools the tip, an ion beam column which forms a focused ion beam by focusing ions of a gas generated in the gas field ion source, a sample stage which moves while a sample to be irradiated with the focused ion beam is placed thereon, a sample chamber which accommodates at least the sample stage therein, and a control unit which repairs a mask or a mold for nano-imprint lithography, which is the sample, with the focused ion beam formed by the ion beam column. The gas field ion source generates nitrogen ions as the ions, and the tip is constituted by an iridium single crystal capable of generating the ions.Type: GrantFiled: August 22, 2014Date of Patent: June 28, 2016Assignee: Hitachi High-Tech Science CorporationInventors: Fumio Aramaki, Anto Yasaka, Osamu Matsuda, Yasuhiko Sugiyama, Hiroshi Oba, Tomokazu Kozakai, Kazuo Aita
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Patent number: 8999178Abstract: A method for fabricating a sharpened needle-like emitter, the method including: electrolytically polishing an end portion of an electrically conductive emitter material so as to be tapered toward a tip portion thereof; performing a first etching in which the electrolytically polished part of the emitter material is irradiated with a charged-particle beam to form a pyramid-like sharpened part having a vertex including the tip portion; performing a second etching in which the tip portion is further sharpened through field-assisted gas etching, while observing a crystal structure at the tip portion by a field ion microscope and keeping the number of atoms at a leading edge of the tip portion at a predetermined number or less; and heating the emitter material to arrange the atoms at the leading edge of the tip portion of the sharpened part in a pyramid shape.Type: GrantFiled: May 15, 2014Date of Patent: April 7, 2015Assignee: Hitachi High-Tech Science CorporationInventors: Yasuhiko Sugiyama, Kazuo Aita, Fumio Aramaki, Tomokazu Kozakai, Osamu Matsuda, Anto Yasaka
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Publication number: 20150053866Abstract: There is provided a repair apparatus including a gas field ion source which includes an ion generation section including a sharpened tip, a cooling unit which cools the tip, an ion beam column which forms a focused ion beam by focusing ions of a gas generated in the gas field ion source, a sample stage which moves while a sample to be irradiated with the focused ion beam is placed thereon, a sample chamber which accommodates at least the sample stage therein, and a control unit which repairs a mask or a mold for nano-imprint lithography, which is the sample, with the focused ion beam formed by the ion beam column. The gas field ion source generates nitrogen ions as the ions, and the tip is constituted by an iridium single crystal capable of generating the ions.Type: ApplicationFiled: August 22, 2014Publication date: February 26, 2015Applicant: Hitachi High-Tech Science CorporationInventors: Fumio Aramaki, Anto Yasaka, Osamu Matsuda, Yasuhiko Sugiyama, Hiroshi Oba, Tomokazu Kozakai, Kazuo Aita
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Publication number: 20150047079Abstract: There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus.Type: ApplicationFiled: August 8, 2014Publication date: February 12, 2015Applicant: Hitachi High-Tech Science CorporationInventors: Tomokazu Kozakai, Osamu Matsuda, Yasuhiko Sugiyama, Kazuo Aita, Fumio Aramaki, Anto Yasaka, Hiroshi Oba
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Publication number: 20140246397Abstract: A method for fabricating a sharpened needle-like emitter, the method including: electrolytically polishing an end portion of an electrically conductive emitter material so as to be tapered toward a tip portion thereof; performing a first etching in which the electrolytically polished part of the emitter material is irradiated with a charged-particle beam to form a pyramid-like sharpened part having a vertex including the tip portion; performing a second etching in which the tip portion is further sharpened through field-assisted gas etching, while observing a crystal structure at the tip portion by a field ion microscope and keeping the number of atoms at a leading edge of the tip portion at a predetermined number or less; and heating the emitter material to arrange the atoms at the leading edge of the tip portion of the sharpened part in a pyramid shape.Type: ApplicationFiled: May 15, 2014Publication date: September 4, 2014Applicant: HITACHI HIGH-TECH SCIENCE CORPORATIONInventors: Yasuhiko SUGIYAMA, Kazuo AITA, Fumio ARAMAKI, Tomokazu KOZAKAI, Osamu MATSUDA, Anto YASAKA
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Patent number: 8764994Abstract: A method for fabricating a sharpened needle-like emitter, the method including: electrolytically polishing an end portion of an electrically conductive emitter material so as to be tapered toward a tip portion thereof; performing a first etching in which the electrolytically polished part of the emitter material is irradiated with a charged-particle beam to form a pyramid-like sharpened part having a vertex including the tip portion; performing a second etching in which the tip portion is further sharpened through field-assisted gas etching, while observing a crystal structure at the tip portion by a field ion microscope and keeping the number of atoms at a leading edge of the tip portion at a predetermined number or less; and heating the emitter material to arrange the atoms at the leading edge of the tip portion of the sharpened part in a pyramid shape.Type: GrantFiled: March 18, 2013Date of Patent: July 1, 2014Assignee: Hitachi High-Tech Science CorporationInventors: Yasuhiko Sugiyama, Kazuo Aita, Fumio Aramaki, Tomokazu Kozakai, Osamu Matsuda, Anto Yasaka
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Publication number: 20130248483Abstract: A method for fabricating a sharpened needle-like emitter, the method including: electrolytically polishing an end portion of an electrically conductive emitter material so as to be tapered toward a tip portion thereof; performing a first etching in which the electrolytically polished part of the emitter material is irradiated with a charged-particle beam to form a pyramid-like sharpened part having a vertex including the tip portion; performing a second etching in which the tip portion is further sharpened through field-assisted gas etching, while observing a crystal structure at the tip portion by a field ion microscope and keeping the number of atoms at a leading edge of the tip portion at a predetermined number or less; and heating the emitter material to arrange the atoms at the leading edge of the tip portion of the sharpened part in a pyramid shape.Type: ApplicationFiled: March 18, 2013Publication date: September 26, 2013Applicant: HITACHI HIGH-TECH SCIENCE CORPORATIONInventors: Yasuhiko SUGIYAMA, Kazuo AITA, Fumio ARAMAKI, Tomokazu KOZAKAI, Osamu MATSUDA, Anto YASAKA
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Patent number: 8274063Abstract: A composite focused ion beam device has a first ion beam irradiation system that irradiates a first ion beam for processing a sample and a second ion beam irradiation system that irradiates a second ion beam for processing or observing the sample. The first ion beam irradiation system has a plasma type gas ion source that generates first ions for forming the first ion beam, each of the first ions having a first mass. The second ion beam irradiation system has a gas field ion source that generates second ions for forming the second ion beam. Each of the second ions has a second mass smaller than that of the first mass.Type: GrantFiled: August 6, 2008Date of Patent: September 25, 2012Assignee: SII NanoTechnology Inc.Inventors: Takashi Kaito, Yoshitomo Nakagawa, Junichi Tashiro, Yasuhiko Sugiyama, Toshiaki Fujii, Kazuo Aita, Takashi Ogawa
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Patent number: 8269194Abstract: A composite focused ion beam device has a sample stage for supporting a sample, a first ion beam irradiation system that irradiates a first ion beam for processing the sample, and a second ion beam irradiation system that irradiates a second ion beam for processing or observing the sample. The first ion beam irradiation system has a liquid metal ion source that generates first ions for forming the first ion beam. The second ion beam irradiation system has a gas field ion source that generates second ions for forming the second ion beam. The first ion beam irradiated by the first ion beam irradiation system has a first beam diameter and the second ion beam irradiated by the second ion beam irradiation system has a second beam diameter smaller than the first beam diameter. The first and second ion beam irradiation systems are disposed relative to the sample stage so that axes of the first and second ion beams are orthogonal to a tilt axis of the sample stage.Type: GrantFiled: August 6, 2008Date of Patent: September 18, 2012Assignee: SII NanoTechnology Inc.Inventors: Takashi Kaito, Junichi Tashiro, Yasuhiko Sugiyama, Kouji Iwasaki, Toshiaki Fujii, Kazuo Aita, Takashi Ogawa
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Publication number: 20100288924Abstract: A composite focused ion beam device includes a first ion beam irradiation system 10 including a liquid metallic ion source for generating a first ion, and a second ion beam irradiation system 20 including a gas field ion source for generating a second ion.Type: ApplicationFiled: August 6, 2008Publication date: November 18, 2010Inventors: Takashi Kaito, Yoshitomo Nakagawa, Junichi Tashiro, Yasuhiko Sugiyama, Toshiaki Fujii, Kazuo Aita, Takashi Ogawa