Abstract: In a mounting structure including a first electrode and a second electrode electrically connected to each other via a conductive adhesive, the periphery of an adhesion portion between at least one of the electrodes and the conductive adhesive is covered with an electrical insulating layer, whereby the adhesion portion is reinforced from the periphery. The electrical insulating layer may be formed by dissolving a binder resin component of the conductive adhesive in a solvent. This increases the concentration of a conductive filler in the conductive adhesive, so that the conductivity of the adhesion portion is also enhanced.

Abstract: In a mounting structure including a first electrode and a second electrode electrically connected to each other via a conductive adhesive, the periphery of an adhesion portion between at least one of the electrodes and the conductive adhesive is covered with an electrical insulating layer, whereby the adhesion portion is reinforced from the periphery. The electrical insulating layer may be formed by dissolving a binder resin component of the conductive adhesive in a solvent. This increases the concentration of a conductive filler in the conductive adhesive, so that the conductivity of the adhesion portion is also enhanced.

Abstract: In a mounting structure including a first electrode and a second electrode electrically connected to each other via a conductive adhesive, the periphery of an adhesion portion between at least one of the electrodes and the conductive adhesive is covered with an electrical insulating layer, whereby the adhesion portion is reinforced from the periphery. The electrical insulating layer may be formed by dissolving a binder resin component of the conductive adhesive in a solvent. This increases the concentration of a conductive filler in the conductive adhesive, so that the conductivity of the adhesion portion is also enhanced.

Abstract: A stress relaxation type electronic component which is to be mounted on a circuit board, wherein a stress relaxation mechanism member is disposed on a surface of said electronic component, said surface being on a side of a connection portion where said electronic component is to be connected to said circuit board, and said stress relaxation mechanism member is electrically conductive.

Abstract: In a mounting structure including a first electrode and a second electrode electrically connected to each other via a conductive adhesive, the periphery of an adhesion portion between at least one of the electrodes and the conductive adhesive is covered with an electrical insulating layer, whereby the adhesion portion is reinforced from the periphery. The electrical insulating layer may be formed by dissolving a binder resin component of the conductive adhesive in a solvent. This increases the concentration of a conductive filler in the conductive adhesive, so that the conductivity of the adhesion portion is also enhanced.

Abstract: In a mounting structure including a first electrode and a second electrode electrically connected to each other via a conductive adhesive, the periphery of an adhesion portion between at least one of the electrodes and the conductive adhesive is covered with an electrical insulating layer, whereby the adhesion portion is reinforced from the periphery. The electrical insulating layer may be formed by dissolving a binder resin component of the conductive adhesive in a solvent. This increases the concentration of a conductive filler in the conductive adhesive, so that the conductivity of the adhesion portion is also enhanced.

Abstract: A manufacturing method for a semiconductor device using a wire bonding method using a metal wire. In the wire bonding method, an impact load applied when a metal ball formed at the tip of the metal wire by electric discharge is brought into contact with a terminal electrode of a semiconductor device is smaller than a static load applied after the metal ball is brought into contact with the terminal electrode. The method makes it possible to prevent an element or wiring from being damaged while securing the pressure necessary for bonding the metal ball to the terminal electrode even when the terminal electrode is placed on the element or the wiring.

Abstract: A manufacturing method for a semiconductor device using a wire bonding method using a metal wire. In the wire bonding method, an impact load applied when a metal ball formed at the tip of the metal wire by electric discharge is brought into contact with a terminal electrode of a semiconductor device is smaller than a static load applied after the metal ball is brought into contact with the terminal electrode. The method makes it possible to prevent an element or wiring from being damaged while securing the pressure necessary for bonding the metal ball to the terminal electrode even when the terminal electrode is placed on the element or the wiring.

Abstract: A liquid jetting apparatus has a concave casing having an opened flat face, and a piezoelectric drive element for at least partly sealing the opened flat face to form a liquid reservoir to store a liquid, such as ink. The reservoir has a liquid injection port for injecting a liquid and a liquid jet port for jetting the stored liquid. The piezoelectric drive element is directly bonded to the open flat face.

Abstract: A resonator ladder type surface acoustic wave filter, has an input electrical terminal, an output electrical terminal, and a grounding terminal being formed on a piezoelectric substrate, a series arm surface acoustic wave resonator and a parallel arm surface acoustic wave resonator, each constructed from an interdigital transducer for exciting a surface acoustic wave, being formed between said input electrical terminal and said output electrical terminal, and when the center frequency of said resonator ladder type surface acoustic wave filter is denoted by fc, and capacitance determined by the number of electrode finger pairs and electrode finger overlap width in said interdigital transducer of said parallel arm surface acoustic wave resonator is denoted by Cp (fc: center frequency [GHz], Cp: capacitance of the interdigital transducer of the parallel arm surface acoustic wave resonator), capacitance C of multiples of said parallel arm surface acoustic wave resonator, connected to the same node between said in

Abstract: The present invention relates to an electronic part used for mobile communications apparatuses and the like, and more particularly to an electronic part, such as an acoustic surface-wave device, a piezoelectric ceramic device or the like, which requires an oscillation space near the surface of the functional device chip thereof, and a method of production thereof. With this method, a space retainer for forming a sealed space at the functional portion of the chip can be hermetically sealed and have high moisture resistance, and the process of forming the space retainer can be carried out easily.

Abstract: According to the present invention, a hybrid magnetic substrate is provided, which includes: a magnetic substrate; and a holding substrate directly bonded to the magnetic substrate through at least one of a hydrogen bond and a covalent bond. Furthermore, a method for producing a hybrid magnetic substrate having the magnetic substrate and the holding substrate is provided, which includes the steps of: cleaning a surface of the magnetic substrate to be bonded and a surface of the holding substrate to be bonded; allowing the cleaned surfaces to be subjected to a hydrophilic treatment; and attaching the surfaces, which are subjected to the hydrophilic treatment, to each other to directly bond the magnetic substrate to the holding substrate.

Abstract: A high-frequency surface acoustic wave filter is such that a plurality of comb electrodes are formed on a piezoelectric substrate, and said high-frequency surface acoustic wave filter has:said piezoelectric substrate;an input terminal;an output terminal; andat least two ground terminals provided on said piezoelectric substrate,wherein said ground terminals are neither connected on said piezoelectric substrate nor connected in a package containing said piezoelectric substrate.

Abstract: The filter circuit is a filter circuit having plural passbands including a first filter having a first passband, and a second filter having a second passband, with their inputs and outputs connected mutually so that these filters are connected in parallel. Inductor elements are connected in series to the terminal of the first filter to which the second filter is connected, and capacitor elements are connected in series to the terminal of the second filter to which the first filter is connected.

Abstract: To realizing a filter which is capable of properly controlling the passband, and the attenuation pole of a surface acoustic wave filter, a surface acoustic wave filter connected in a ladder type with the surface acoustic wave resonators 104, 105 has an element 106 which changes in capacity by voltage to be impressed and is connected in series with a resonator 105 connected in parallel to the signal line 100.

Abstract: A surface acoustic wave device is manufactured by directly or indirectly bonding a lid to a substrate having a surface acoustic wave element to seal the element under the lid. The lid is made of at least one material selected from the group comprising lithium niobate, lithium tantalete, lithium borate, glass and quartz. The substrate is made of at least one material selected from the group comprising quartz, lithium niobate, lithium tantalete and lithium borate.

Abstract: A surface acoustic wave device has a main substrate; a comb-like electrode formed on one of the main surfaces of said main substrate; and a supplementary substrate joined with the other main surface of said main substrate, wherein said supplementary substrate has a smaller thermal expansion coefficient and a larger thickness than said main substrate.

Abstract: A compact, low height, low cost, and high reliability surface acoustic wave device, and its method of manufacture. The surface acoustic wave device consists of a substrate, a comb-electrode disposed on the main surface of the substrate, plural electrode pads disposed around the comb-electrode, protecting means covering the comb-electrode through a closed space produced by combining the comb-electrode and the electrode pads with the substrate by using substantially covalent bonding force acting between conductive bumps formed on the electrode bumps, a conductive adhesive layer disposed at least on the top of the conductive bumps, and a package adhered on the conductive bumps by means of the conductive adhesive, and insulation adhesive filled into the package contacting the conductive adhesive, the conductive bumps, and the protective means.

Abstract: A piezoelectric device is manufactured by: (1) mirror finishing surfaces of a first substrate and a second substrate made of a piezoelectric element; (2) forming grooves on at least one of the two surfaces of the first and second substrates; (3) joining the mirror-finished surfaces of the first substrate and the second substrate; (4) applying heat to the joined substrates and bonding them; (5) forming an opening on the first substrate so that a part of the exposed areas of the second substrate is exposed through the opening; (6) forming piezoelectric devices by forming electrodes on at least one of the second substrate through the opening and a corresponding area to the exposed area on the rear side of the second substrate; and (7) dividing the bonded substrates into portions each having one of the piezoelectric devices. Through this manufacturing method, piezoelectric devices with high yield ratios and high reliability can be obtained.

Abstract: A surface acoustic wave filter is provided which performs balanced signal/unbalanced signal conversion. The input and output impedances are different from each other. In a surface acoustic wave filter of the longitudinal mode type, a signal is applied to two terminals of an input interdigital transducer, or a signal is output from two terminals of an output interdigital transducer, thereby consituting a balanced type filter. The aperture length of the input interdigital transducer is different from that of the output interdigital transducer.