Abstract: A light-emitting diode driver circuit and an LED light source which are capable of reliably turning OFF an LED even when an input voltage having a value smaller than a predetermined value is supplied. A light-emitting diode driver circuit for turning ON an LED includes: an inverter which outputs electric power for driving the LED; and an inverter control circuit which controls an operation of the inverter, and when a DC voltage applied to the inverter control circuit has a value smaller than the predetermined value, the inverter control circuit stops the operation of the inverter.

Abstract: A light bulb-shaped lamp according to the present invention includes: a board on which an LED is mounted; a circuit board on which a drive circuit that turns on the LED is mounted; output wires for supplying power for turning on the LED from the drive circuit to the LED; a pedestal; and a potential-stabilizing wire electrically connecting the pedestal to a circuit ground of the drive circuit.

Abstract: A light bulb-shaped lamp according to the present invention includes: a board on which an LED is mounted; a circuit board on which a drive circuit that turns on the LED is mounted; output wires for supplying power for turning on the LED from the drive circuit to the LED; a pedestal; and a potential-stabilizing wire electrically connecting the pedestal to a circuit ground of the drive circuit.

Abstract: A light-emitting diode driver circuit and an LED light source which are capable of reliably turning OFF an LED even when an input voltage having a value smaller than a predetermined value is supplied. A light-emitting diode driver circuit for turning ON an LED includes: an inverter which outputs electric power for driving the LED; and an inverter control circuit which controls an operation of the inverter, and when a DC voltage applied to the inverter control circuit has a value smaller than the predetermined value, the inverter control circuit stops the operation of the inverter.

Abstract: A sensor system includes a sensor device (10) and an integrated circuit (20) for driving the device (10). The device (10) includes a sensor body (1) of a silicon-based material, an upper sealing member (2) of a silicon-based material, and a lower sealing member (3) of a silicon-based material. The upper sealing member (2) and the lower sealing member (3) are joined together to cooperatively house the body (1) therewithin in an airtight manner. The device (10) and the circuit (20) are formed as a stacked body. The body (1) is electrically connected to a wiring pattern (12) of the circuit (20) through a conductive through-path (4) penetrating the upper sealing member (4) and a mounting electrode (5) provided on an outer surface of the upper sealing member (2). The device (10) is connected to an MID substrate (30) through the circuit (20).

Abstract: A method of manufacturing a semiconductor device. In this method, a concave portion is formed in one surface in the thickness direction of a primary base plate comprising a semiconductor substrate with a relatively large thickness dimension. Then, through-holes are formed by a reactive-ion etching process using as a mask an opening formed in an oxide film provided on the other surface in the thickness direction of the primary base plate. The opening has a narrow width in a region corresponding to the concave portion and a wide width in the remaining region. Thus, respective times necessary for the wide-width through-hole to penetrate through the primary base plate and necessary for the narrow-width through-hole to reach a bottom surface of the concave portion can be approximately equalized to complete the common etching process of the wide-width through-hole and the narrow-width through-hole approximately simultaneously.

Abstract: Disclosed is a gyro sensor, which comprises a primary base plate (1) and a support base plate (2) which are superimposed on one another. The primary base plate (1) is provided with a driven mass body (11) to be driven in such a manner as to be vibrated in a direction intersecting with a surface of the support base plate (2), and a detection mass body (12) coupled with the driven mass body (11) through a drive spring (13) and adapted to be displaceable in a plane along the support base plate (2). Two detection springs (15) extending in the arranging direction of the driven mass body (11) and the detection mass body (12) are connected, respectively, to opposite side of the detection mass body (12), and the other ends of the detection springs (15) are connected together through a coupling segment (16). A fixing segment (17) provided at a longitudinally intermediate portion of the coupling segment (16) is fixed to the support base plate (2).

Abstract: A sensor system includes a sensor device (10) and an integrated circuit (20) for driving the device (10). The device (10) includes a sensor body (1) of a silicon-based material, an upper sealing member (2) of a silicon-based material and a lower sealing member (3) of a silicon-based material. The upper sealing member (2) and the lower sealing member (3) are joined together to cooperatively house the body (1) therewithin in an airtight manner. The device (10) and the circuit (20) are formed as a stacked body. The body (1) is electrically connected to a wiring pattern (12) of the circuit (20) through a conductive through-path (4) penetrating the upper sealing member (4) and a mounting electrode (5) provided on an outer surface of the upper sealing member (2). The device (10) is connected to an MID substrate (30) through the circuit (20).

Abstract: Disclosed is a gyro sensor, comprises a primary base plate (1) and a support base plate (2) which are superimposed on one another. The primary base plate (1) is provided with a driven mass body (11) to be driven in such a manner as to be vibrated in a direction intersecting with a surface of the support base plate (2), and a detection mass body (12) coupled with the driven mass body (11) through a drive spring (13) and adapted to be displaceable in a plane along the support base plate (2).

Abstract: A method of manufacturing a semiconductor device. In this method, a concave portion is formed in one surface in the thickness direction of a primary base plate comprising a semiconductor substrate with a relatively large thickness dimension. Then, through-holes are formed by a reactive-ion etching process using as a mask an opening formed in an oxide film provided on the other surface in the thickness direction of the primary base plate. The opening has a narrow width in a region corresponding to the concave portion and a wide width in the remaining region. Thus, respective times necessary for the wide-width through-hole to penetrate through the primary base plate and necessary for the narrow-width through-hole to reach a bottom surface of the concave portion can be approximately equalized to complete the common etching process of the wide-width through-hole and the narrow-width through-hole approximately simultaneously.