Abstract: A solid-state image capturing apparatus according to the present invention includes a pixel area in which pixels for generating a signal charge by a photoelectric conversion on an incident light are arranged in a two dimensional matrix; a row selection section for selecting each pixel row of the pixel area; a plurality of column signal lines, to which an analog pixel signal from each pixel of a pixel row selected by the row selection section is readout; and a signal processing circuit for generating a digital pixel value from the analog pixel signal of each pixel that is read out to each of the column signal lines, where the signal processing circuit includes at least two or more AD conversion circuits for simultaneously converting the analog pixel signal of each pixel of the selected pixel row into a digital pixel value.

Abstract: A response with a wider dynamic range is obtained without a need for irradiating strong radiation onto a subject (human body). A CCD controller 22 allows reading of imaging signals from CCD image sensors 1 to 12, which is performed twice during different time periods, once during a long exposure time period and once during a short exposure time period, with respect to the irradiation of a constant dose of radiation by an X-ray generator 25; and a main controller 26 allows a memory 24 to synthesize image data from the successively twice-read imaging signals into an image with proper timing. As a result, it becomes unnecessary to irradiate strong radiation onto a subject, such as a human body and other substances, as is done conventionally, owing to a radiation dose weak enough not to cause a harmful influence.

Abstract: A solid-state image capturing apparatus according to the present invention includes a pixel area in which pixels for generating a signal charge by a photoelectric conversion on an incident light are arranged in a two dimensional matrix; a row selection section for selecting each pixel row of the pixel area; a plurality of column signal lines, to which an analog pixel signal from each pixel of a pixel row selected by the row selection section is readout; and a signal processing circuit for generating a digital pixel value from the analog pixel signal of each pixel that is read out to each of the column signal lines, where the signal processing circuit includes at least two or more AD conversion circuits for simultaneously converting the analog pixel signal of each pixel of the selected pixel row into a digital pixel value.

Abstract: A fixed-pattern noise elimination apparatus 4 eliminates a fixed-pattern noise component resulting from dark current out of an image signal outputted from an effective pixel of a solid-state image sensor 2 during image sensing, by using: a first dark current that is calculated based on a previously acquired signal outputted from a light-shielded pixel of the solid-state image sensor 2 and that is stored in a compensation data memory 6; a second dark current that is calculated based on a previously acquired signal outputted from the effective pixel of the solid-state image sensor 2 with no incident light and that is stored in the compensation data memory 6; and a third dark current that is calculated based on a signal outputted from the light-shielded pixel of the solid-state image sensor 2 during image sensing. With this configuration, a fixed-pattern noise component resulting from dark current can be effectively eliminated irrespective of the temperature of the solid-state image sensor.

Abstract: A solid-state image pickup device has a photoelectric conversion part performing photoelectric conversion on incident light, a comparison part connected to an output terminal of the photoelectric conversion part to compare an output voltage of the photoelectric conversion part with a reference voltage, a capacitive element having one end connected to the output terminal of the photoelectric conversion part, and a control line connected to the other end of the capacitive element. In a signal storage period, a first control voltage is applied to the control line so as to make an electric potential at the output terminal of the photoelectric conversion part fall outside a transition region of the comparator. In a signal read period, a second control voltage is applied to the control line so as to make the electric potential at the output terminal of the photoelectric conversion part fall within the transition region of the comparator.

Abstract: The detection accuracy and detection reproducibility of an analytical microchip utilizing beads are improved. To this end the analytical microchip has a reaction path 17 having a particle-filled area 19 filled with a group of solid particles, a test-solution introducing path 11 for introducing a test solution into the reaction path, a test-solution discharging path 14 for discharging a test solution inside the reaction path to outside of the microchip, and a particle injection aperture 16 provided on one end side of the reaction path 17. The test-solution discharging path 14 has a direct communication with the particle-filled area 19 in the reaction path 17. The test-solution introducing path 11 has a direct communication with the reaction path 17 on the upper stream side relative to the test-solution discharging path 14 and within the upper-stream-side end surface 22 of the particle-filled area 19.

Abstract: A brightness level converting apparatus improves a contrast of an image represented by an image pickup signal output from a logarithmic conversion solid-state image pickup device, so as to obtain a natural image. For this purpose, the brightness level converting apparatus converts brightness levels in the image pickup signal output from the solid-state image pickup device which logarithmically converts an incident light quantity. In the brightness level converting apparatus, a brightness level converting section converts the brightness levels in the image pickup signal by using a brightness level converting function expressed by an S-shaped curve which indicates the relation between an input brightness level and an output brightness level and includes one inflexion point. Therefore, the contrast in a low brightness level range in the image pickup signal is reduced. At the same time, the contrast in a high brightness level range is reduced while appropriately keeping a gradation.

Abstract: A solid-state image pickup device has a photoelectric conversion part performing photoelectric conversion on incident light, a comparison part connected to an output terminal of the photoelectric conversion part to compare an output voltage of the photoelectric conversion part with a reference voltage, a capacitive element having one end connected to the output terminal of the photoelectric conversion part, and a control line connected to the other end of the capacitive element. In a signal storage period, a first control voltage is applied to the control line so as to make an electric potential at the output terminal of the photoelectric conversion part fall outside a transition region of the comparator. In a signal read period, a second control voltage is applied to the control line so as to make the electric potential at the output terminal of the photoelectric conversion part fall within the transition region of the comparator.

Abstract: In a voltage comparator of the present invention, across a gate and a source of an amplifier transistor, a phase compensating capacitor and a first switch circuit are connected with each other in series, and a second switch circuit for short-circuiting the phase compensating capacitor is provided. The second switch circuit is turned on when the first switch circuit is turned off so as to (1) short-circuit the phase compensating capacitor and (2) discharge the phase compensating capacitor which has been charged while the first switch circuit was turned on. This permits to completely turn off the first switch circuit, and to prevent distortion of an output signal outputted from an output terminal, thereby preventing accumulation of unnecessary charges in the phase compensating capacitor.

Abstract: A charge transfer device includes: a transfer channel for transferring a charge in a charge transfer direction; a charge detecting section having a diffusion layer for storing the charge transferred through the transfer channel and for inducing a voltage corresponding to the amount of the stored charge; and a transistor for detecting the induced voltage, the transistor having: a gate electrode formed on the diffusion layer, the gate electrode being in direct contact with the diffusion layer; a gate insulating film formed on the gate electrode; and a channel region formed above the gate electrode.

Abstract: A charge transfer device has a transfer section for transferring a signal charge along a transfer channel, and a pickup section connected to the transfer section for converting the signal charge received from the transfer section to a voltage signal, both sections being formed on a substrate. The transfer channel is bent generally at a right angle between the transfer section and the pickup section.