Abstract: Provided is a terahertz-band electromagnetic wave oscillation element that includes an independent terahertz wave oscillation unit for oscillating terahertz-band electromagnetic waves. The terahertz wave oscillation unit consists of a discoid superconductor having a multilayered Josephson junction that enables oscillation of the terahertz-band electromagnetic waves by coordinated vibration of a plurality of Josephson junctions using an AC Josephson effect, the superconductor being circular in a cross section parallel to a lamination plane of the multilayered Josephson junction.

Abstract: A laser light-source apparatus according to the present invention is equipped with: a laser-driving circuit board, thermal insulators that are placed on the laser-driving circuit board; a heat receiving plate that is placed on the thermal insulators and thermally insulated from the laser-driving circuit board, a laser light-source module that is installed on the heat receiving plate so as to be thermally connected to the heat receiving plate and is also electrically connected to the laser-driving circuit board so as to be driven thereby, and a heat sink that is thermally connected to the heat receiving plate via a heat pipe.

Abstract: Provision of a reflective mask blank for EUV lithography having an absorber layer which has a low reflectance in the wavelength regions of EUV light and pattern inspection light and whose film composition and film thickness are easily controllable to desired ones. A reflective mask blank for EUV lithography, which comprises a substrate, and a reflective layer to reflect EUV light and an absorber layer to absorb EUV light, formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), boron (B) and silicon (Si), and in the absorber layer, the content of B is at least 1 at. % and less than 5 at. % and the content of Si is from 1 to 25 at. %, and wherein the absorber layer contains no nitrogen (N) or at most 10 at. % of N.

Abstract: A projection type image display apparatus includes an optical engine that emits a light according to image signal, a Fresnel lens on which the light emitted by the optical engine is incident and emitting the light as a parallel light, and a diffusion member that diffuses the parallel light emitted by the Fresnel lens. The projection type image display apparatus further includes a driving unit that moves the Fresnel lens or the diffusion member in a plane parallel to an emitting surface of the Fresnel lens or the diffusion member, a frame the supports the Fresnel lens, the diffusion member and the driving unit, a resilient supporting body that supports a weight of the Fresnel lens or the diffusion member with respect to the frame, and a holding unit that holds the Fresnel lens or the diffusion member so as to be movable in the plane parallel to the emitting surface of the Fresnel lens or the diffusion member.

Abstract: An object of the present invention is to provide a cooling device that is easy to attach and that ensures intimate contact at a contact surface between a heat absorbing surface of a Peltier element and an object to be cooled and a contact surface between a heat radiating surface of the Peltier element and a cooling part.

Abstract: Provided are a substrate with a conductive film for an EUV mask blank in which the generation of particles due to abrasion between an electrostatic chuck and the substrate is prevented; and a substrate with a multilayer reflective film and an EUV mask blank each employing such a substrate with a conductive film. A substrate with a conductive film to be used for producing a reflective mask blank for EUV lithography, the conductive film containing chromium (Cr) and nitrogen (N), the average concentration of N in the conductive film being at least 0.1 atomic % and less than 40 atomic %, the crystal state of at least a surface of the conductive film being amorphous, the sheet resistance of the conductive film being at most 27 ?/?, and the surface roughness (rms) of the conductive film being at most 0.5 nm.

Abstract: A laser light-source apparatus according to the present invention is equipped with: a laser-driving circuit board, thermal insulators that are placed on the laser-driving circuit board; a heat receiving plate that is placed on the thermal insulators and thermally insulated from the laser-driving circuit board, a laser light-source module that is installed on the heat receiving plate so as to be thermally connected to the heat receiving plate and is also electrically connected to the laser-driving circuit board so as to be driven thereby, and a heat sink that is thermally connected to the heat receiving plate via a heat pipe.

Abstract: Disclosed is a cooling apparatus including: a heat receiving plate to which a plurality of heating elements are attached; a radiator plate to which a plurality of Peltier devices are attached; a thermal transport heat pipe that couples the heat receiving plate with the radiator plate; and a heat dissipating device being provided on an exothermic side of the Peltier devices; wherein the plurality of heating elements are arranged along a longitudinal direction of the thermal transport heat pipe, and the plurality of Peltier devices are arranged along the longitudinal direction of the thermal transport heat pipe, whereby, when using a plurality of Peltier devices, reducing power consumption thereof by equalizing each operation of the respective Peltier devices.

Abstract: To provide a reflective mask blank for EUV lithography having an absorber layer, which presents a low reflectance to a light in the wavelength ranges of EUV light and pattern inspection light, and which is easily controlled to have desired film composition and film thickness. A reflective mask blank for EUV lithography, comprising a substrate, and a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), boron (B), silicon (Si) and nitrogen (N), and in the absorber layer, the B content is at least 1 at % and less than 5 at %, the Si content is from 1 to 25 at %, and the compositional ratio of Ta to N (Ta:N) is from 8:1 to 1:1.

Abstract: A projection image display apparatus is provided which is capable of preventing misregistration in an on-screen image. A main frame assembly holds together an optical engine that modulates light emitted from a light source and a screen on which light emitted from the optical engine is projected, and the main frame assembly is configured to be supported by a bottom frame formed by a separate structure, whereby distortion having occurred at the bottom frame is caused not to transmit to the main frame assembly.

Abstract: To provide an EUV mask blank of which the decrease in the reflectance during EUV exposure is suppressed, and a substrate with a functional film to be used for production of such an EUV mask blank. A substrate with a reflective layer for EUV lithography, comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer formed in this order on the substrate, wherein the protective layer contains ruthenium (Ru) and at least one element selected from the group consisting of boron (B) and zirconium (Zr); and in the protective layer, the Ru content is from 70 at % to 95 at % and the total content of B and Zr is from 5 at % to 30 at %.

Abstract: A reflective mask blank for EUV lithography, which comprises a substrate, and a reflective layer to reflect EUV light and an absorber layer to absorb EUV light, formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta) and hafnium (Hf), and in the absorber layer, the content of Hf is from 20 to 60 at. % and the content of Ta is from 40 to 80 at. %, and wherein the absorber layer has a content of N being 0 to at most 35 at. %.

Abstract: To provide a reflective mask blank for EUV lithography having an absorber layer which has a low reflectance in a wavelength region of EUV light or light for inspection of a pattern and which is easy to control to have a desired layer composition and thickness. A reflective mask blank for EUV lithography, which comprises a substrate, and a reflective layer to reflect EUV light and an absorber layer to absorb EUV light, formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta) and hafnium (Hf), and in the absorber layer, the content of Hf is from 20 to 60 at. % and the content of Ta is from 40 to 80 at. %.

Abstract: Provision of a reflective mask blank for EUV lithography having an absorber layer which has a low reflectance in the wavelength regions of EUV light and pattern inspection light and whose film composition and film thickness are easily controllable to desired ones. A reflective mask blank for EUV lithography, which comprises a substrate, and a reflective layer to reflect EUV light and an absorber layer to absorb EUV light, formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), boron (B) and silicon (Si), and in the absorber layer, the content of B is at least 1 at. % and less than 5 at. % and the content of Si is from 1 to 25 at. %, and wherein the absorber layer contains no nitrogen (N) or at most 10 at. % of N.

Abstract: A projection-type image display apparatus that projects an image on a screen, includes a screen frame that holds the screen; an optical engine base that is coupled to a lower edge of the screen frame; an upper cross brace that extends obliquely backwards from an upper edge of the screen frame; a lower cross brace that extends obliquely backwards from a vertical frame of the screen frame; and a coupling member that couples the upper cross brace with the lower cross brace.

Abstract: A projection type image display apparatus includes an optical engine that emits a light according to image signal, a Fresnel lens on which the light emitted by the optical engine is incident and emitting the light as a parallel light, and a diffusion member that diffuses the parallel light emitted by the Fresnel lens. The projection type image display apparatus further includes a driving unit that moves the Fresnel lens or the diffusion member in a plane parallel to an emitting surface of the Fresnel lens or the diffusion member, a frame the supports the Fresnel lens, the diffusion member and the driving unit, a resilient supporting body that supports a weight of the Fresnel lens or the diffusion member with respect to the frame, and a holding unit that holds the Fresnel lens or the diffusion member so as to be movable in the plane parallel to the emitting surface of the Fresnel lens or the diffusion member.

Abstract: Provided are a substrate with a conductive film for an EUV mask blank in which the generation of particles due to abrasion between an electrostatic chuck and the substrate is prevented; and a substrate with a multilayer reflective film and an EUV mask blank each employing such a substrate with a conductive film. A substrate with a conductive film to be used for producing a reflective mask blank for EUV lithography, the conductive film containing chromium (Cr) and nitrogen (N), the average concentration of N in the conductive film being at least 0.1 atomic % and less than 40 atomic %, the crystal state of at least a surface of the conductive film being amorphous, the sheet resistance of the conductive film being at most 27 ?/?, and the surface roughness (rms) of the conductive film being at most 0.5 nm.

Abstract: To provide a reflective mask blank for EUV lithography having an absorber layer, which presents a low reflectance to a light in the wavelength ranges of EUV light and pattern inspection light, and which is easily controlled to have desired film composition and film thickness. A reflective mask blank for EUV lithography, comprising a substrate, and a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), boron (B), silicon (Si) and nitrogen (N), and in the absorber layer, the B content is at least 1 at % and less than 5 at %, the Si content is from 1 to 25 at %, and the compositional ratio of Ta to N (Ta:N) is from 8:1 to 1:1.

Abstract: To provide an EUV mask blank of which the decrease in the reflectance during EUV exposure is suppressed, and a substrate with a functional film to be used for production of such an EUV mask blank. A substrate with a reflective layer for EUV lithography, comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer formed in this order on the substrate, wherein the protective layer contains ruthenium (Ru) and at least one element selected from the group consisting of boron (B) and zirconium (Zr); and in the protective layer, the Ru content is from 70 at % to 95 at % and the total content of B and Zr is from 5 at % to 30 at %.

Abstract: To provide a reflective mask blank for EUV lithography having an absorber layer which has a low reflectance in a wavelength region of EUV light or light for inspection of a pattern and which is easy to control to have a desired layer composition and thickness. A reflective mask blank for EUV lithography, which comprises a substrate, and a reflective layer to reflect EUV light and an absorber layer to absorb EUV light, formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta) and hafnium (Hf), and in the absorber layer, the content of Hf is from 20 to 60 at. % and the content of Ta is from 40 to 80 at. %.