Abstract: The present invention relates to a method for manufacturing a semiconductor device including a method for reforming an insulating film formed by a low temperature CVD method. It is an object of the present Invention to provide a method for manufacturing a semiconductor device capable of improving a film quality of an insulating film formed by a CVD method which is able to form a film at a low temperature and also capable of maintaining mass productivity, in which processing by irradiation with ultraviolet rays of the insulating film while heating the film after forming an insulating film (4) on a body to be formed by a chemical vapor deposition method is included.

Abstract: A, method for forming semiconductor device, includes forming an insulating film on a body by chemical vapor deposition, at low temperature raising the temperature of, the body, and exposing the body to plasma gas.

Abstract: A semiconductor fabrication apparatus for forming a film on a wafer by a CVD method provides for easy removal of the dust generated in a film-forming chamber without reducing the uptime/downtime ratio of the equipment. The apparatus includes one or more gas dispersing devices having gas releasing surfaces for releasing a reaction gas to form a film on a wafer; one or more wafer holders having wafer mounting surfaces opposed to the plane defined by the gas releasing surface; and one or more cleaners, each having a suction port and a brush connected to the suction port, provided opposing the gas releasing surface. Either the cleaner or the gas dispersing device is moved so that the brush contacts and traverses the gas releasing surface.

Abstract: The present invention provides a method for forming a chemical vapor deposition film which is suitable for an interlevel insulator between Al and Al or an interlevel insulator between Al and a gate, and provides an improved chemical vapor deposition film suitable for mass production. An organic siloxane or alkoxysilane and an alkoxy compound of germanium are mixed in a vapor phase, and reacted with oxygen or ozone to thereby form a thin glass film composed of a two-component system of silicon oxide and germanium oxide on a substrate.

Abstract: An apparatus and method for manufacturing a semiconductor device capable of forming a single layer film or a multilayer film of improved quality by continuously processing without exposure of the wafer to the ambient air. The apparatus includes a film forming section having a gas dispersion unit for supplying reaction gas, a processing section for processing the formed film and a wafer holder for holding a wafer facing the gas dispersion unit or the processing section. The wafer holder moves the wafer between the film forming section and the processing section while heating the wafer by a heating element contained therein.

Abstract: A continuous type automated apparatus for manufacturing a semiconductor device by forming a film on a wafer by a CVD method. The apparatus moves the wafer while maintaining the wafer at a predetermined temperature, and controls production of individual wafers and formation of multi-layer films of different types. The apparatus includes a wafer holder, a rotary shaft for supporting the wafer holder so that wafer loading surfaces of the wafer holder rotate in a circle within a single plane. A gas dispersion unit is provided separate from the wafer holder and facing the wafer loading surface of the wafer holder. A first pair of contacts are electrically connected to a heater and are mounted on the rotary shaft and a second pair of contacts are connected to a power source are in sliding contact with the first pair of contacts so that the rotation of the rotary shaft is not obstructed. This apparatus is useful as a continuous type automated CVD apparatus.

Abstract: The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for forming a film used for flattening a substrate surface having unevenness in a manufacturing process of a semiconductor device, and has for its object to provide a method of manufacturing a semiconductor device for making it possible to flatten a film by processing at a lower temperature without deteriorating the film quality.The present invention is structured including a process of depositing a film composed of BPSG or PSG on a substrate surface having unevenness, a process of depositing a SiO.sub.2 film or depositing a film composed of BPSG or PSG having concentration lower than phosphorus concentration or boron concentration in the film or a SiO.sub.2 film on the film, and a process of melting and fluidizing these films so as to flatten them by applying heat treatment.

Abstract: A semiconductor fabrication apparatus includes a plurality of processing stations for film formation or etching, concurrently or continuously. The semiconductor fabrication apparatus is capable of supplying a process gas for film formation or etching from a single gas header to each processing station and provides uniform wafer processing at each processing station. The apparatus includes a process gas supply source; a plurality of branch pipes branched from the common header which, in turn, is connected to a process gas supply source; a plurality of outlet pipes connecting the branch pipes with the processing stations through first flow rate controllers; exhaust pipes also connected to the branch pipes; plural switching valves for switching the flow of process gas between the outlet pipes and the exhaust pipes; and plural second flow rate controllers in the exhaust pipes.

Abstract: In a process for forming a CVD film, a polysiloxane compound having at least two silicon-oxygen bonds is reacted with ozone to form an SiO.sub.2 film. If desired, the reaction may be effected in the presence of a gas containing an impurity mixed with the polysiloxane compound and ozone to form a PSG, BSG or BPSG film. In a semiconductor device, the SiO.sub.2 film, or the PSG, BSG or BPSG film is used as a planarizing film, an interlayer insulating film, or a cover insulating film.

Abstract: A pin boot for use in a disc brake including a support mechanism for supporting a disc brake main body, a slide hole and a pin which is fittable with the support member, which pin boot comprises: a flange portion mounted to a boss portion of an opening of the slide hole of the support member; a freely expandable bellows which extends from the flange portion; and a seal portion which adjoins the bellows and is engageable with the pin of the disc brake, characterized in that the rigidity of at least one of the bellows, the seal member and a connecting portion for connecting the bellows with the seal member is non-uniform with respect to peripheral direction thereof.

Abstract: In a process for producing a semiconductor device, deposition of a CVD-SiO.sub.2 film at a given first O.sub.3 concentration according to a TEOS-SiO.sub.3 reaction is followed by further deposition of a CVD-SiO.sub.2 film at a second O.sub.3 concentration higher than the first O.sub.3 concentration according to the TEOS-O.sub.3 reaction to form a CVD-SiO.sub.2 film having a predetermined thickness and a surface little uneven.

Abstract: A gas-phase growth process for growing films of uniform thickness or having a prescribed pattern form or growing films sequentially onto a substrate and an apparatus related thereto. The films are grown by allowing an inert gas to flow over a reaction gas flow in parallel to the surface of the substrate. Optionally, the substrate surface could be irradiated by a UV light source which is directed from above the inert gas toward the substrate surface.

Abstract: A gas-phase growth process for forming a film of SiO.sub.2 Si.sub.3 N.sub.4 or Si.sub.x O.sub.y N.sub.z, which comprises reacting a mixture of an organic or inorganic silane with one or more reaction gases comprising O.sub.2, N.sub.2 O, NO.sub.2 NO, CO.sub.2 CO and NH.sub.3, with the proviso that the mixture of inorganic silane and O.sub.2 is excluded as a reaction gas combination of the present invention. The process comprises feeding a reaction gas into a reaction chamber which is kept at a reaction temperature below 500.degree. C., and subjecting the surface of a substrate chamber which is placed in the reaction chamber to UV irradiation. This irradiation excites the reaction gas, which allows a low-temperature gas-phase growth to proceed. The photo-excitation occurs selectively only at UV-irradiated sections, so that a film growth may occur selectively on the substrate surface within the range of UV irradiation.

Abstract: A hoist includes a shaft driven by external force, a driving shaft connected to the shaft, a reduction gear train for transmitting rotation of the driving shaft to a load sheave, a mechanical brake assembly in the reduction gear train, and an overload safety device having a clutch mechanism capable of transmitting torque larger in driving said load sheave in a winding-off direction than that in a winding-up direction.

Abstract: A tobacco smoke filter includes a corrugated tape-like wrapping which, together with an outer perforated or otherwise air-permeable paper, defines a set of longitudinal grooves. Each of the grooves includes a blocking member, so as to inhibit direct smoke flow through the grooves and promote a ventilation effect. The blocking members in each groove are longitudinally staggered from one groove to the next to simplify the production of the device.

Abstract: A switching element is inserted in a power supply line to a transmission circuit in the portable unit of a cordless telephone. The charge potential which is supplied from the base unit to the portable unit actuates the switching element to break the power supply line when the portable unit is replaced on the cradle of the base unit.

Abstract: An electric hoist includes an electric motor, a driving shaft connected to a rotor shaft of said electric motor, a reduction gear train for transmitting rotation of the driving shaft to a load sheave, and a mechanical brake assembly in the reduction gear train.

Abstract: A hoist includes a shaft driven by external force, a driving shaft connected to the shaft, a reduction gear train for transmitting rotation of the driving shaft to a load sheave, and a mechanical brake assembly in the reduction gear train. According to the invention in the reduction gear train is arranged an overload safety device comprising a driven gear having a one-way clutch and rotatively driven by the driving shaft and radially inward and outward dual friction plates located between the driven gear and an element of the mechanical brake assembly so as to transmit torque through the radially outward friction plates in winding-up and through both the radially inward and outward friction plates in winding-off. With this arrangement, the electric hoist according to the invention is able to automatically prevent lifting, lowering and dragging a load under overload condition, and enables the once lifted load to be securely lowered irrespective of its light or heavy weight.

Abstract: An idling device is able to bring into an idling condition a lever hoist including a change gear provided on driving member threadedly engaged on a driving shaft for driving a sheave for winding-up a chain or rope for a load, an operating lever rockably driven by a hand, winding-up and winding-off driving pawls engageable with teeth of the change gear and changeable in response to the purpose of hoisting or lowering the load, and a braking assembly for preventing the change gear from being driven by a gravity of the load and adapted to be clamped and released by rotative movement of the driving member relative to said driving shaft.

Abstract: An idling device is able to bring a lever hoist into an idling condition including a change gear provided on driving member threadedly engaged on a driving shaft for driving a sheave for winding-up a chain or rope for a load, an operating lever rockably driven by a hand, winding-up and winding-off driving pawls engageable with teeth of the change gear and changeable for hoisting or lowering the load, and a braking assembly for preventing the change gear from being driven by the gravitational force of the load and adapted to be clamped and released by rotative movement of the driving member relative to the driving shaft.