Patents by Inventor Kazuo Nambu

Kazuo Nambu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Field effect transistor
    Patent number: 7157756
    Abstract: A field-effect transistor includes a channel layer that is formed on a predetermined semiconductor layer and has an impurity concentration varying from a low value to a high value, and a source region and a drain region each having a bottom face above the predetermined semiconductor layer.
    Type: Grant
    Filed: July 15, 2003
    Date of Patent: January 2, 2007
    Assignee: Fujitsu Quantum Devices Limited
    Inventors: Norihiko Ui, Kazutaka Inoue, Kazuo Nambu
  • Field-effect type compound semiconductor device and method for fabricating the same
    Patent number: 6800878
    Abstract: At least a channel layer and an etching stopper layer are provided on a semiconductor substrate in order, a gate electrode that Schottky-contacts the etching stopper layer is provided on the etching stopper layer, and InGaP having an In composition ratio of 0.66 through 0.9 is used as the etching stopper layer in a field effect type compound semiconductor device.
    Type: Grant
    Filed: November 19, 2002
    Date of Patent: October 5, 2004
    Assignee: Fujitsu Quantum Devices Limited
    Inventors: Kazuo Nambu, Junichiro Nikaido
  • Field-effect transistor and method of producing the same
    Publication number: 20040016965
    Abstract: A field-effect transistor includes a channel layer that is formed on a predetermined semiconductor layer and has an impurity concentration varying from a low value to a high value, and a source region and a drain region each having a bottom face above the predetermined semiconductor layer.
    Type: Application
    Filed: July 15, 2003
    Publication date: January 29, 2004
    Applicant: FUJITSU QUANTUM DEVICES LIMITED
    Inventors: Norihiko Ui, Kazutaka Inoue, Kazuo Nambu
  • Field-effect type compound semiconductor device and method for fabricating the same
    Publication number: 20030098477
    Abstract: At least a channel layer and an etching stopper layer are provided on a semiconductor substrate in order, a gate electrode that Schottky-contacts the etching stopper layer is provided on the etching stopper layer, and InGaP having an In composition ratio of 0.66 through 0.9 is used as the etching stopper layer in a field effect type compound semiconductor device.
    Type: Application
    Filed: November 19, 2002
    Publication date: May 29, 2003
    Applicant: FUJITSU QUANTUM DEVICES LIMITED
    Inventors: Kazuo Nambu, Junichiro Nikaido